Papers by Keyword: CdTe

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Authors: M.U. Ahmed, E.D. Jones, J.B. Mullin, N.M. Stewart
Authors: Nicolás Di Lalla, Rodolfo A. Pérez, Fanny Dyment
Authors: Aidhia Rahmi, Akrajas Ali Umar, Muhamad Mat Salleh, Burhanuddin Yeop Majlis, Munetaka Oyama
Abstract: This paper reports the preparation of exceptionally high brightness CdTe quantum dots (QDs) that gives emission in the range of green to red by simply prepared them in a binary mixture of octadecyl phosphonic acid (ODPA) and oleic acid (OA) surfactants. By easy controlling the ratio between the two surfactants in the reaction, the QDs with unique emission, high -brightness and -quantum yield (QY), ca. 63, 87 and 89% for green, yellow and red QDs respectively, can be obtained. Owing to their unique PL and high QY, the CdTe QDs should find an extensive uses in the currently existing applications.
Authors: Jing Jin Wu, Hong Cai Wu, Ce Zhou Zhao
Abstract: After reviewing the development of CdTe solar cells, the merits of superstrate and substrate configuration have been discussed. Then, the material process techniques are investigated according to their application, following with discuss at the challenges.
Authors: José Pedro Rino, Paulo S. Branício, Denílson S. Borges
Abstract: An effective inter-atomic potential is proposed in order to describe structural and dynamical properties of II-VI and III-V semiconductors. The interaction potential consists of twoand three-body interactions. The two-body term takes into account steric repulsion, charge-induce dipole interaction due to the electronic polarizability of ions, Coulomb interaction due to charge transfer between ions, and dipole-dipole (van der Waals) interactions. The three-body term, which has a modified Stillinger-Weber form, describes bond-bending as well as bond-stretching effects. Here we report the fitting and the application of this interaction potential for InP in the crystalline phase and for CdTe in the crystalline and liquid phases. The structural correlations are discussed through pair distribution, coordination number and bond-angle functions. Vibrational density of states for InP and CdTe as well as the static structure factor for liquid CdTe are in very good agreement with experimental data.
Authors: Chi Won Choi, Ji Koon Park, Sang Sik Kang, Sung Ho Cho, Kyung Jin Kim, Sung Kwang Park, Heung Kook Choi, Jae Hyung Kim, Sang Hee Nam
Abstract: We have developed a large area, flat panel detector for general applications to digital radiology. This paper presents the x-ray detection characteristics with various semiconductor radiation detectors (HgI2, PbI2, PbO, CdTe) derived by a novel wet coating process for large area deposition. The wet coating process could easily be made from large area films with printing paste mixed with semiconductor and binder material at room temperature. X-ray performance data such as dark current, sensitivity and signal to noise ratio (SNR) were evaluated. The HgI2 semiconductor was shown in much lower dark current than the others, and also has the best sensitivity. In this paper, reactivity and combination characters of semiconductor and binder material that affect electrical and x-ray detection properties would be verified through our experimental results.
Authors: G.H. Tariq, Muhammad Anis-ur-Rehman
Abstract: The direct energy band gap in the range of ~1.5eV and the high absorption coefficient (~105cm-1) makes Cadmium Telluride (CdTe) a suitable material for fabrication of thin film solar cells. Thin film solar cells based on CdTe (~ 1cm area) achieved efficiency of 15.6% on a laboratory scale. CdTe thin films were deposited by thermal evaporation technique under vacuum 2×10-5mbar on glass and stainless steel (SS) substrates. During deposition substrates temperature was kept same at 200C for all samples. The structural properties were determined by the X-ray Diffraction (XRD) patterns. All samples exhibit polycrystalline nature. Dependence of different structural parameters such as lattice parameter, micro strain, and grain size and dislocation density on thickness was studied. Also the influence of the different substrates on these parameters was investigated. The analysis showed that the preferential orientation of films was dependent on the substrate type.
Authors: D.V. Korbutyak, S.G. Krylyuk, I.M. Kupchak, V.G. Litovchenko, L. Fedorenko, Arthur Medvid, Y. Hatanaka
Authors: Hannah C. Gardner, Birju Patel, Cristina Bertoni, Diego E. Gallardo, Steve Dunn
Abstract: Nanostructured CdTe is proving a popular material for a variety of modern applications. Here, we report photoluminescent deterioration of CdTe due to Cl2 contamination. Cl2 gas was bubbled through a 2ml suspension of thioglycolic acid capped CdTe nanoparticles whilst photoluminescence was monitored. With the addition of only 0.02ml of Cl2 a loss of luminescence intensity was observed. Addition of 0.4ml of Cl2 resulted in a 70% loss of luminescence intensity, a 21nm shift in wavelength, and a large narrowing of the full-width-at-half-maximum. Cl2 attacks the Cd-S bond in the thiol capping layer of the nanoparticle, disrupting the passivation of the nanocrystal, and allowing the formation of non-radiative trap states. Smaller nanocrystals with a larger surface area to volume ratio are more heavily affected as is shown in the selective reduction of intensity from the smaller particles resulting in a narrower full-width-at-half-maximum and an apparent photoluminescence shift. A decrease in overall intensity is seen due to the lower number of emitting particles.
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