Papers by Keyword: Chemical-Mechanical Planarization (CMP)

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Authors: C. Shang, Wayne Huang, Srini Raghavan, Zhe Fei Chen, Robert Small, M. Peterson, Jeong Sic Jeon
Authors: Nam Hoon Kim, Dong Myong Na, Pil Ju Ko, Jin Seong Park, Woo Sun Lee
Abstract: Chemical mechanical polishing (CMP) of platinum thin films was performed for the improvement of surface morphology. Platinum thin films after CMP process with alumina slurry showed the increase of surface morphology without a remarkable difference of the thermal characteristics of as-annealed platinum thin films. The power consumption of platinum thin films micro-heater also became very low by improvement of surface morphology after CMP process. The similar or improved electrical and thermal characteristics of platinum thin films for micro-heater of sensor applications as well as evaluation possibility of sensing property by the improved surface morphology were obtained after CMP process.
Authors: Nam Hoon Kim, Gwon Woo Choi, Yong Jin Seo, Woo Sun Lee
Abstract: Indium tin oxide (ITO) CMP was performed by change of de-ionized water (DIW) temperature in pad conditioning process. DIW with high temperature was employed in pad conditioning immediately before ITO-CMP. The removal rate of ITO thin film polished by silica slurry immediately after pad conditioning process with the different DIW temperatures dramatically increased to 93.0 nm/min after pad conditioning at DIW of 75 oC, while that after the general conditioning process at 30 oC was about 66.1 nm/min. The grains of ITO thin film became indistinguishable by CMP after pad conditioning with the high-temperature DIW. The carrier density decreased with the increase of conditioning temperature. The hall mobility rapidly increased regardless of conditioning temperature. The uniformity of optical transmittance also improved.
Authors: An Chen Lee, Tzu Wei Kuo, Zeng Lien Lee
Abstract: Advanced process control (APC) has been recognized as a proper tool for maximizing profitability of semiconductor manufacturing facilities by improving efficiency and product quality. Run-to-run (RtR) process control with good quality and reliable performance for APC applications are most applicable. Chemical mechanical planarization (CMP) is part of critical processing module in semiconductor manufacturing. This paper proposes a new RtR control scheme, modified double EWMA controller (m-dEWMA), which is adaptive to the mixed product CMP processes. The m-dEWMA controller combined thread dEWMA with the drift compensation scheme to deal with the drift and shift disturbances caused by tool and products, respectively. Comparing recently mixed product control schemes: threaded EWMA controller, JADE control and threaded prediction correction controller (threaded PCC), the simulation results show that the m-dEWMA has better control performance than other controllers. The experiment results revealed that the m-dEWMA controller improves the wafer uniformity significantly in mixed product CMP process.
Authors: Jum Yong Park, Dae Hong Eom, Sang Ho Lee, Beom-Young Myung, Sang Ick Lee, Jin Goo Park
Authors: Chao Hui Zhang, Hong Lei, Xiao Li Hu
Abstract: Slurry preparation is of paramount importance in chemical mechanical planarization (CMP) process. It couples the combination effects of chemical and mechanical ones. In this paper, the characteristics of the slurry particles used in CMP are firstly modeled, which includes the size and the concentration with primary priority. And then, the model is validated by experiments during hard disk wafer polishing. The slurry prepared contributes to a high quality hard disk surface processed with CMP, which leads to low waviness Wa and roughness Ra with suitable material removal rate (MRR) as well. The study will surely lay a feasible foundation to the CMP mechanism.
Authors: Zhao Zhong Zhou, Ju Long Yuan, Bing Hai Lv, Jia Jin Zheng
Abstract: Polishing pad plays a key role in determining polish rate and planarity of a chemical mechanical planarization (CMP). The properties of the pad would deteriorate during polishing because of pad surface grazing, which results in reduced removal rates and poorer planarity of wafer surface. Pad conditioning and its influence on pad surface structure and CMP process is introduced and discussed in this paper. The study shows that the surface structure can be regenerated by breaking up the glazed areas with conditioner, MRR(Material Removal Rate) can be maintained at high level with proper pad conditioning, and UN(Non-uniformity)can also improved. Orthogonal experiments design is employed in this study to determine the best conditioning parameters.
Authors: Jia Jin Zheng, Zhao Zhong Zhou, Ju Long Yuan, Ping Zhao
Abstract: The pad is one of the key factors in the chemical-mechanical planarization (CMP) process. To ensure the machining capability and the quality of workpieces, the pad must be conditioned in the process. It will cause the pad thiner, and be replaced by a new one for losing the machining capability finally. For this reason, a new method of CMP by using the continuous composite electroplating on the polishing disc is introduced. In this process, the machining ability of the pad can be ensured due to the continuous Sn-SiO2 composite electroplating. The effect of cathode current density and time of plating on the characteristics of composite coating and silica wafer are investigated. The experiment indicates that the continuous composite electroplating polishing (CCEP) is an efficiency method for polishing silicon wafer, and the surface roughness of the silicon wafer is 0.005μm
Authors: Xiao Yan Liu, Yu Ling Liu, Xin Huan Niu, Zhi Wen Zhao, Yi Hu
Abstract: Chemical mechanical planarization (CMP) of copper interconnection in hydrogen peroxide (H2O2) as oxidizer based alkaline slurry was investigated. The new model is put forward, which is based on the characteristic of H2O2, chemical kinetics and mechanical removal. This properties of H2O2 can be effectively compensated the defect of surface topology during the process of polishing. Researcher previous study has shown that the surface is largely copper metal with Cu2O at low H2O2 concentrations and largely CuO at high H2O2 concentrations. Cu2O is more easily removed by both chemical and mechanical processes than CuO. During the CMP process, as the oxidizer concentration increases, the removal rate goes up initially followed by a gradual decay. This characteristic of oxidizer is used to achieve copper surface global planarity. The surface planarity was achieved by removing high area on the surface more quickly relative to the low area, because the concentration of Cu2O in the low area as the passivation film is more than the high area. Meanwhile the passivation film of the low area is thicker than the high area. In order to achieve polishing process optimization, the influence of pH adjustment and pressure, are also taken into consideration. Combining both RR and PE, the optimal H2O2 concentration and pressures are in range 1.0 ~1.5 vol% and 0.04 ~0.07 mpa, respectively. The roughness of surface which is measured by AFM is 0.49 after CMP.
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