Papers by Keyword: Chemical Solution Deposition

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Authors: Ming Hua Pu, Guo Li, Xiao Hua Du, Yan Bing Zhang, Hua Ming Zhou, Rui Ping Sun, Zu Qiang Wang, Yong Zhao
Abstract: A new series of ReBiO3 (RBO, Re=Y, Sm or other lanthanide) layers have been prepared on single crystal LaAlO3 or SrTiO3 respectively by a low-cost chemical solution deposition (CSD) method, and their structures have been investigated. With deferent Re element, the ReBiO3 phase has a similar cubic lattice with the pseudo-cubic lattice parameter a’ of about 3.81~3.94Å, which is closely matched to that of the ReBa2Cu3Ox (RBCO). In addition, these ReBiO3 phase are stable when they are sintered on 750~1050°C. After annealed below 850°C in air, highly c-axis oriented ReBiO3 layers can be formed on the (100) plane of single crystal LaAlO3 or SrTiO3. Observed under SEM, these layers appear very dense, smooth, pinhole-free and crack-free morphology. With the matched lattice parameter, lower annealing temperature, good grain-orientation and smooth surface, ReBiO3 layers should be candidates for the buffer layers of RBCO coated conductor. As a proof, a superconducting layer of YBCO has been deposited also by a CSD approach on one of these layers and show good texture and expected superconductivity.
Authors: M. Özenbaş, N. Özgüven, M.B. Emre, M.V. Demirbaş
Authors: Yao Hui Xue, Chang Sheng Deng, Quing Feng Li, De Sheng Ai, Xia Ming Dai
Authors: J.H. Markna, Davit Dhruv, K.N. Rathod, Chirag Savaliya, T.M. Shiyani, Dhiren Pandya, Ashvini D. Joshi, N.A. Shah
Abstract: Hybrid nanostructured Metal Oxide Semiconductor (MOS) capacitor was fabricated on silicon substrates (n-type) using chemical solution deposition with YMnO3 as an oxide layer. Electrical properties of MOS capacitor have been investigated with frequency dependence capacitance-voltage (C-V) characterization. The surface morphology of deposited layer was studied using the Atomic Force Microscopy (AFM). Hysteresis in the C-V loop and change in the values of Cminimum were described by a charge trap mechanism in the multiferroic oxide layer of MOS devices. While anomalous behavior in saturation capacitance in the inversion as well as in accumulation region and a shift in threshold voltage (VT) were explained in the vicinity of frequency depended Debye length (LDebye).
Authors: Rui Dong, Qun Wang, Li Dong Chen, Xiao Min Li
Abstract: A simple chemical solution deposition method was developed for the preparation of La0.7Ca0.3MnO3 (LCMO) thin films. The LCMO thin films were prepared on Si/SiO2/TiO2/Pt substrates by spin-coating method, followed by heat-treatment at 900°C. The fabrication process of the LCMO thin film was investigated by means of TG-DSC, FTIR, XRD, FE-SEM and EPMA. The electric pulse induced reversible resistance switching is observed in the Ag-LCMO-Pt sandwich structure.
Authors: Bo Ping Zhang, Jing Feng Li, Li Min Zhang, Jun Zeng, Yan Dong
Abstract: Lithium and titanium co-doped NiO ceramics have been found to exhibit a giant low-frequency dielectric constant (ε~105), however, the same system thin films is not yet study. In the present study, Lithium and titanium co-doped NiO thin films were prepared by a chemical solution deposition method using 2-methoxyethanol as a solvent, nickel actate tetrahydrate, lithium acetate dihydrate and titanium isopropoxide as starting materials. The complex oxides such as NiO, Ni0.2O0.8 and NiTiO3 were formed for the Ni0.98Ti0.02O and Ni0.686Li0.294Ti0.02O thin films, and the addition of the lithium lead to the formation of Li2NiO2.888. The dielectric constant of Lithium and titanium co-doped Ni0.686Li0.294Ti0.02O thin films is about 426 at 100 Hz and much higher than that of the titanium-doped Ni0.98Ti0.02O.
Authors: Yi Ping Guo, Kazuyuki Suzuki, Kaori Nishizawa, Takeshi Miki, Kazumi Kato
Abstract: BaTiO3 films with thickness of ~1 2m were prepared by chemical solution deposition on LaNiO3/Pt/TiOx/SiO2/Si substrate with a thin highly (100)-oriented and high crystallinity BaTiO3 thin film (~140 nm) as a buffer layer. The BaTiO3 films prepared by using a 0.5 mol/L solution have high crystallinity and still show (100) preferred orientation. The electrical properties of the (100)-oriented BaTiO3 films prepared by this process have been studied. A dielectric constant of ~910 and a loss tangent of ~3.5% (1 kHz) were obtained. The remanent polarization (2 Pr) and coercive field (2 Ec) are 4.0 μC/cm2 and 35 kV/cm, respectively.
Authors: Philippe Odier, Antoine Girard, Yannick Cointe, S. Donet, Ze Ming Yu, Tristan Caroff, Andrea Cavallaro, Abdenacer Guibadj
Abstract: This work reports some new studies related to critical aspects in the development of coated conductors (CC). New bi-axially textured tapes based on commercial copper alloys were fabricated and tested as substrates for LZO buffer layer deposited by chemical solution deposition (CSD). Such a layer form cube texture on NiW5 and Cu55Ni45 with an identical or even better texture than that of the substrate. It was shown that a S c(2x2) sub-layer formed at the metallic surface as a positive effect on the nucleation. The crystallisation of LZO on Cu55Ni45 still has to be improved, being inhibited by trapped C in the film. Recent progresses using our continuous MOCVD system are shown. A CC fabricated by an all MOCVD process has been obtained on SS/YSZIBAD substrate with high transport critical current (170 A/cm-width, at 77 K). It is also shown that LZOMOD can efficiently protect Ni5W RABITS from oxidation during deposition of CeO2 layer by MOCVD under 30-40% O2 partial pressure. This opens the possibility to fabricate a CC on RABITS by MOCVD. This shows that a mixed MOD/MOCVD approach could be efficient. Finally a 2m long CC SS/YSZIBAD has been tested for fault current limiter applications. Best limitation was observed at 86 K where an equivalent energy of 340 J has been dissipated in the CC during 12 ms without apparent damage of the CC. In a subsequent operation, the CC was however destroyed. The causes are discussed in the perspective to design better architectures for this application.
Authors: Kiyotaka Tanaka, Kenichi Kakimoto, Hitoshi Ohsato
Abstract: The development of lead-free piezoelectric materials has been required from the viewpoint of environmental preservation. We focused the lead-free KNbO3-based systems, and used a chemical solution deposition (CSD) process to obtain their precursor. (Na1-xKx)NbO3 precursor solutions were prepared from metal alkoxides and solvents such as absolute ethanol and 2-methoxyethanol. Crystallization behavior of the precursor gels obtained from the above solutions was investigated by the thermogravimetry differential thermal analysis (TG-DTA) measurement.
Authors: Hirofumi Matsuda, Takashi Iijima
Abstract: Pr-substituted Bi4Ti3O12 (BPT, Bi4-xPrxTi3O12, x=0.1-0.4) polycrystalline thick films with a-/b-axes orientations and thickness of 2-3 μm were grown on sputter-grown IrO2 layers by chemical solution deposition method for developing lead-free piezoelectric film microdevices. Electric-field-induced strains measurements were performed by double-beam laser displacement meter and longitudinal strain of e=0.25 % under 400 kV/cm and piezoelectric coefficient d33=63 pm/V at 10 Hz were observed in BPT thick film of x=0.1 with a-/b-axes mixed orientations. The value of strain closely related to spontaneous polarization and monotonously decreased with increasing x. Microstructures of 3 μm-thick BPT films were fabricated by photolithography and dry etching processes with several tens micrometers in size.
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