Papers by Keyword: CMP

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Authors: Yong Bo Wu, Li Jun Wang
Abstract: Chemical mechanical polishing (CMP) is often employed to obtain a super smooth work-surface of a silicon wafer. However, as a conventional CMP is a loose abrasive process, it is hard to achieve the high profile accuracy and lots of slurry must be supplied during CMP operations. As an alternate solution, a fixed abrasive CMP process can offer better geometrical accuracy and discharges less waste disposal. In this paper, in order to enhance the polishing efficiency and improve the work-surface quality, a novel ultrasonic assisted fixed abrasive CMP (UF-CMP) is proposed and the fundamental machining characteristics of the UF-CMP of a silicon wafer is investigated experimentally. The results show that with the ultrasonic assistance, the material removal rate (MRR) is increased, and the surface quality is improved.
Authors: Yong Hong Tian, Guang Jian Chen
Abstract: Multi-core processor parallels two or more computing core in a single processor to enhance computational capability. Plenty of former researches are focused on CMP (Chip multi-processor), the most typical structure of multi-core processor. Thus deign of cache coherence, in particular, is one of the primary problems beyond other researches about CMP. In this paper, cache coherence protocol of CMP is fully presented, along with its advantages and disadvantages. Finally, some edging issues of cache coherence protocols are addressed in this paper.
Authors: Yong Guang Wang, Liang Chi Zhang
Abstract: Chemo-mechanical polishing (CMP) has been a useful method to produce superior brittle wafer surfaces. This paper reviews the CMP of silicon carbide and sapphire wafers, focusing on efficiency of the polishing rate. The effects of slurry type, slurry pH value and mixed abrasives will be discussed in detail.
Authors: Yunn Shiuan Liao, P.W. Hong, C.T. Yang
Authors: Jae Young Choi, Hwan Kim, J. Park, S. Chung, Hae Do Jeong, M. Kinoshita
Authors: J.Y. Liu, Dong Ming Guo, Zhu Ji Jin, Ren Ke Kang
Abstract: The lubrication properties of the slurry between the silicon wafer and the pad in chemical mechanical polishing (CMP) are critical to the planarity of the silicon wafer. The effects of porous pad and suspending abrasives on the slurry film beneath the wafer become more prominent as the size of the silicon wafer becomes bigger. In order to explore the effects of porous pad and suspending abrasives on the lubrication properties of the slurry, a three-dimensional lubrication model based on the micropolar fluid theory and Darcy’s law is developed. The effects of the nanometer abrasives and the porosity of the pad on the lubrication of the slurry film between the silicon wafer and the pad are discussed.
Authors: Jing Zhai, Zi Feng Ni, Qing Zhong Li
Abstract: A kind of slurry which is applicable for fine atomizing CMP was made and the optimal results were obtained through orthogonal experiments by comparing fine atomizing CMP and traditional CMP. The research results show that the material removal rate of fine atomizing CMP is 52.23% of traditional CMP, and the dosage of the slurry used in fine atomizing CMP only accounts for 10 vol% compared to traditional CMP. The surface roughness after the fine atomizing CMP is 2.5nm which is better than that of the traditional CMP (3.0nm).
Authors: Juan Fang, Hong Bo Zhang
Abstract: The “Memory Wall” problem has become a bottleneck for the performance of processor, and on-chip multiprocessor(CMP) aggravates the memory access latency. So many hardware prefetching techniques have been brought to solve this challenge, i.e. Future Execution. This paper introduces runahead execution(another hardware prefetching technique firstly used on single-core processor) and Future Execution, then it brings up some improvement for Future Execution and gives the result and analysis of data tested by SPEC2000 benchmark.
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