Papers by Keyword: Co-Sputtering

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Authors: Shi Wei Zhang, Li Yuan Hou, Yong Chao Han, Yuan Hua Xie
Abstract: In the vacuum film coating field, the co-sputtering method by two or more targets has been widely used for coating the composite film consisted of a variety of component elements. In this paper, a typical co-sputtering system is studied which composes the twin round planar magnetron sputtering targets settled symmetrically and slantways towards a single flat substrate with self-rotation. A model is set up to describe the non-dimensional relationship between the film thickness and the structural parameters of co-sputtering system, such as distance of the substrate-to-target , symmetrical eccentricity , translation length and obliquity angle of target . On the assumption that the sputtered particles are emitted in the direction of cosine distribution and fly straightly without collision scattering, the depositing rate distribution, film thickness distribution, the utilization ratio of the target sputtering material, and the fluctuant ratio of the components from two targets are calculated. Some of simulating examples are given by use of Matlab software.
Authors: Jang Hsing Hsieh, T.H. Yeh, C.S. Chiou, C.T. Huang, C. Li
Abstract: TaN–Cu and TaN-Ag nanocomposite films were deposited by reactive co-sputtering on Si. The films were then annealed using RTA (Rapid Thermal Annealing) at 400 °C for 2, 4, 8, 15 minutes respectively to induce the nucleation and growth of metal particles in TaN matrix and on film surface. The samples were then tested for their anti-bacterial behaviors against Gram-negative and Gram-positive bacteria. The results were compared with the solubility of Ag and Cu in a buffer solution. Under similar ion concentrations, it is concluded that Ag ion or TaN-Ag is more effective against E. Coli (Gram-negative), while Cu ion or TaN-Cu is more effective against Staphylococcus aureus (Gram-positive).
Authors: Rui M.S. Martins, Norbert Schell, H. Reuther, Luís Pereira, Rui Jorge C. Silva, Karimbi Koosappa Mahesh, Francisco Manuel Braz Fernandes
Abstract: Ni-Ti SMA are smart materials undergoing first order martensitic transformations driven by temperature and/or stress. In the form of film they are very attractive candidates for microelectro- mechanical system (MEMS) applications. Future directions include the production of functionally graded films by changing deliberately the ratio Ti/Ni across their thickness. However, for the successful development of this type of films, it is important to characterize, model and control the variations in composition, crystalline structure and transformation temperatures. Our approach is in-situ XRD study of the actual growth of the films of varying composition along the thickness carried out using a deposition chamber installed at a synchrotron radiation beamline. These studies were complemented with ex-situ analysis techniques. The results achieved on a Ni-Ti film co-sputtered from Ni-Ti and Ti targets on a TiN buffer layer are presented in this paper. The deposition started by using optimised parameters for a near equiatomic composition. After 1 h (≈330 nm thick film), the Ti power was increased from 20 to 25 W, leading to the precipitation of Ti2Ni. The evolution of the lattice parameter values of the B2 phase, calculated from the corresponding XRD data, is clearly linked with the increase of the Ti power. The depth profile of the atomic concentrations determined by Auger Electron Spectroscopy (AES) is in agreement with the in situ XRD results. The temperature dependence of the electrical resistivity was used to monitor phase transformations, Scanning Electron Microscopy (SEM) has shown the presence of twinned martensite on the film’s surface at room temperature.
Authors: Xiao Bai Chen, Hong Qiu, Hao Qian, Ping Wu, Feng Ping Wang, Liqing Pan, Yue Tian
Abstract: 185 nm-thick Ni76Fe24 films were deposited on SiO2/Si(100) substrates at room temperature by DC magnetron co-sputtering and they were annealed in a vacuum of 5×10-4 Pa at 300 , 400 and 480 °C for 1 hour, respectively. The as-deposited film grows with thin columnar grains and has void networks in the grain boundaries. As the annealing temperature increases, the grain size gradually increases and the void networks decrease. Besides, the void networks shorten and widen with annealing temperature. The resistivity of the film decreases with increasing annealing temperature. The magnetic hysteresis loop of the as-deposited film shows a hard magnetization requiring a saturation field of 1050 Oe while that of the film annealed at 480 °C represents an easy magnetization. For the film annealed at 480 °C the coercivity is 78 Oe and the ratio of remanent magnetization to saturation magnetization is 0.72. The as-deposited and annealed films have an isotropic magnetization characteristic.
Authors: Jae Hyun Shim, Nam Hee Cho
Abstract: The nanostructural and optical features of Al-doped Si thin films, which were prepared by co-sputtering Al-chips and a Si main target, were investigated in terms of Al-doping and post-deposition heat-treatment conditions; the heat treatment was carried out at temperatures of 400 ~ 1100 °C. The structural and chemical features are related with the photoluminescence (PL) phenomena of the films. The PL intensity as well as the concentration of Si nanocrystallites were increased by doping particular amount of Al in the films.
Authors: Zhuang Liu, Lin Zhu, Jing Lin, Zhi Hui Sun
Abstract: SiOx barrier films were deposited on poly (ethylene terephthalate) (PET) by radio frequency (RF) magnetron co-sputtering with double targets. The films deposited by co-sputtering were denser and smoother because different energy particles sputtering from double targets grew small islands to weaken shadowing effect which greatly reduce the interval gaps. The water vapor and oxygen transmission of SiOx films deposited by co-sputtering decreased to 0.31 cc/m2/day, 0.27 g/m2/24h respectively.
Authors: Xin Yi Li, Da Chen Wang, Qin Yang Du, Wei Feng Liu, Guo Shun Jiang, Chang Fei Zhu
Abstract: CZTS thin films are fabricated by sulfurizing co-sputtered metallic precursor CuZnSn layers under H2S atmosphere. The precursor layers are Cu-poor, Zn-rich deposited and the fabricated films are about 2 µm in thickness. A closed-tube process is preferred with regard to its producing large closely pack grains with smooth surface. XRD and Raman confirm the CZTS structure and the impurities on the surface are removed after suitable chemistry treatments. The band gap of the CZTS is determined to be 1.48 eV by extrapolation. Some more CZTS films are product with slightly changed parameters, sulfurization time, temperature and concentration of H2S, respectively. It is supposed that beside sulfurization time, the temperature could be more significant than concentration of H2S in the closed system.
Authors: Rui Miguel S. Martins, Francisco Manuel Braz Fernandes, Rui Jorge C. Silva, Manfred Beckers, Norbert Schell
Abstract: A sputter deposition chamber inserted into the six-circle Huber diffractometer of the materials research station of the ROssendorf BeamLine (ROBL-CRG) at ESRF allowed to perform in-situ experiments during film growth of Ni-Ti. It is equipped with Kapton windows for X-Ray Diffraction (XRD) and specular Reflectivity (XRR) measurements. By following in situ the evolution of the structure of the growing film, we reveal intermediate “states” which cannot be seen/revealed ex situ, because those states occurred only during the growth but were no longer visible after deposition. Vertical Bragg-Brentano large-angle scattering geometry was employed to study the different trends of structural transformations taking place during deposition. Ni-Ti films exhibiting a non-uniform phase content across the film thickness could be produced by varying the power of co-sputtering Ni-Ti plus Ti. A significant decrease of IB2{110}/IB2{200} was observed when a bias of -45 V was applied.
Authors: Tian Bao Chen, Ping Fan, Zhuang Hao Zheng, Dong Ping Zhang, Xing Min Cai, Guang Xing Liang, Jing Rong Chi
Abstract: Antimony and tellurium were deposited on K9 glass via direct current and radio frequency magnetron co-sputtering. Antimony telluride thermoelectric thin films were simultaneously synthesized without post treatment. The influence of the sputtering power of Te and annealing of Sb-Te fabricated by magnetron sputtering were investigated. The maximum Seebeck coefficient of Sb-Te film was 212 μV/K which was obtained at the sputtering power of Sb 4W and Te 60W separately. When annealed at 300 °C, the electrical resistivity and Seebeck coefficient of the film are 6.67x104 S/m and 119 μV/K. The power factor increased to the highest value of 9.4×10-4 W/mK2 from 4×10-5 W/mK2 after post treatment of the as-deposited film.
Authors: Xi Ying Zhou, Yan Hui Liu, Zhou Xu
Abstract: The Al-Cu-Fe nano films were successfully deposited by magnetron co-sputtering with the Al, Cu and Fe independent targets. The surface morphologies, microstructure and composition of the films were analyzed by SEM and XRD. The bonding strength, friction coefficient, nanohardness and elastic modulus of the films before and after annealing at 600 °C were determined by nano-indentation and nano-scratch. The results show that the bonding strength of the film with stainless steel substrate is the highest among these substrates. The friction coefficient of the film for pure Cu substrate is 0.17. New fine β phases with approximate quasicrystalline structure are formed in Al-Cu-Fe films after annealing at 600 °C. Furthermore, the hardness and elastic modulus of the films are obviously increased respectively.
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