Papers by Keyword: Crystalline Quality

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Authors: Gang Cheng Jiao, Zheng Tang Liu, Feng Shi, Lian Dong Zhang, Wei Cheng, Shu Fei Wang, Yu Jian Zhou, Zhuang Miao
Abstract: The GaAsP crystal material grown on GaAs substrate has been extensive applications in the area of photoelectronic device. There because GaAsP have advantageous photoelectronic performance and adjustable band gap. We report growth of GaAs1-xPx grown on GaAs substrate by solid source molecular beam epitaxy (SSMBE). On the basis of the optimized Ⅴ/Ⅲ flux ratio, appropriate growth rate, and the substrate temperature for sample growth, different composition GaAs1-xPx layers had been grown on GaAs top. Lattice-mismatched became the big challenges to high-quality epitaxial growth of the GaAs1-x Px materials on GaAs substrate. The crystalline quality, surface morphology were performed by applying high resolution X-ray diffractometry (HRXRD) and high resolution optical microscopy. The etched region and internal defect were also investigated.
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Authors: A.Y. Polyakov, Mark A. Fanton, Marek Skowronski, Hun Jae Chung, Saurav Nigam, Sung Wook Huh
Abstract: A novel approach to the high growth rate Chemical Vapor Deposition of SiC is described. The Halide Chemical Vapor Deposition (HCVD) method uses SiCl4, C3H8 (or CH4), and hydrogen as reactants. The use of halogenated Si source and of separate injection of Si and C precursors allows for preheating of source gases without causing premature chemical reactions. The stoichiometry of HCVD crystals can be controlled by changing the C/Si flow ratio and can be kept constant throughout growth, in contrast to the Physical Vapor Transport technique. HCVD was demonstrated to deposit high crystalline quality, very high purity 4H- and 6H-SiC crystals with growth rates comparable to other bulk SiC growth techniques. The densities of deep electron and hole traps are determined by growth temperature and C/Si ratio and can be as low as that found in standard silane-based CVD epitaxy. At high C/Si flow ratio, the resistivity of HCVD crystals exceeds 105 _cm. These characteristics make HCVD an attractive method to grow SiC for applications in high-frequency and/or high voltage devices.
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