Papers by Keyword: CV

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Authors: Mads Mikelsen, Ulrike Grossner, Jan H. Bleka, Edouard V. Monakhov, Bengt Gunnar Svensson, Rositza Yakimova, Anne Henry, Erik Janzén, Alexander A. Lebedev
Authors: Ayayi Claude Ahyi, Aaron Modic, C. Jiao, Y. Zheng, Gang Liu, L.C. Feldman, Sarit Dhar
Abstract: Lateral MOSFET devices with a thin surface counter-doped layer using Sb and As with and without NO passivation have been fabricated and characterized. The results demonstrate that Sb and As counter-dope the interface without significant trap passivation while in combination with NO there is a superposition of both trap passivation and counter-doping related performance enhancement. In addition, by varying the counter doping level, a universal mobility characteristics of NO passivated devices has been identified.
Authors: Victor Tapio Rangel-Kuoppa, Alexander Tonkikh, Nikolay Zakharov, Peter Werner, Wolfgang Jantsch
Abstract: We investigate self-assembled pyramid-shaped Ge Quantum Dots (QDs) with lateral dimensions of 15 nm, and heights of 2.5-3 nm. These Ge QDs were grown by Molecular Beam Epitaxy (MBE) on n-type Si(100) substrates using the Sb-mediated growth mode. The resistivity of the substrates was about 5 Ωcm. The Si buffer layer below the QDs and the Si capping layer above them were doped up to 1018 cm-3 by Sb. Cross-section transmission electron microscopy shows the QDs and the Sb delta-doped layers. Using standard photolithographic techniques, a 0.3 mm2 Au Schottky contact was applied to the epilayer, while an Ohmic contact was formed on the back side of the substrate. Plotting C-2 vs. V plot reveals the nominal doping of 1018 cm-3. DLTS studies revealed two levels with fitted activation energies of 49 meV and 360-390 meV. They are related to the Sb doping and the Pb interface states, respectively. The simulation suggests a deep level with a volumetric concentration of 2.55×1015 cm-3. Multiplying this value by the thickness of the depletion region obtained from the CV measurements, we find that the deep level capture about 5.8×109 electrons per cm2.
Authors: Fariza Mohamad, Kah Hao Cheong, Nabiah binti Zinal, Nurliyana binti Mohamad Arifin, Asyikin Sasha binti Mohd Hanif, Nik Hisyamudin Muhd Nor, Masanobu Izaki
Abstract: Cuprous oxide (Cu2O) is a promising material for solar cell application. Due to its various advantages over silicon material, it has been exploited extensively to be use in photovoltaic cell. Cu2O thin films were electrodeposited in sulfate-based solution. Cyclic voltammorgram (CV) measurement was used to investigate the reduction process under controlled parameters. Deposition potential of-0.1V vs. Ag/AgCl was used for the fabrication of Cu2O thin film based on the CV measurement. CV also revealed that the deposition speed was dependent on the bath pH and the temperature. X-ray diffraction (XRD) measurement, Field Emission Scanning-Electron Microscopy (FE-SEM) and Ultraviolet-visible spectroscopy (UV-Vis) were performed to characterize the deposited thin films. The n-Cu2O was successfully fabricated on FTO glass substrate with (111)-prefered orientation. Surface morphology of the thin films were observed to be in flower-like shape combination with pyramidal and triangular shape.
Authors: Li Ying Jiang, Yan Zhang, Fen Fen Wang, Jie Hu, Yan Xia Yan, Qing Hua Chen, Guang Zhao Cui
Abstract: A simple electrochemical test system based on aptasensor for ATP detection is constructed in this paper. This system includes a home-made signal conditioning module, a Data Acquisition Card, a personal computer installed with LabVIEW and a self-assembly aptasensor. The electrochemical control programs are developed in LabVIEW, which generated drive signals, scanned the potential of the working electrode, acquired and stored the data, queried and displayed the results. This electrochemical test system is in small dimension, which makes it suitable for in-field measurements. In order to clarify the electrochemical properties of the electrochemical test system, cyclic voltammetry (CV) was used to monitor the process in details.
Authors: Marc Avice, Ulrike Grossner, Edouard V. Monakhov, Joachim Grillenberger, Ola Nilsen, Helmer Fjellvåg, Bengt Gunnar Svensson
Abstract: In this study, electrical properties of Al2O3 deposited by Atomic Layer Deposition (ALCVD) on n-type 4H-SiC were investigated. Metal-Oxide-Semiconductor (MOS) capacitors were characterized by various electrical techniques such as Capacitance-Voltage (CV), Current- Voltage (IV) and Deep Level Transient Spectroscopy (DLTS) measurements. Two different oxidants, H2O and O3, have been used for the oxide deposition. After deposition, the flat-band voltage shift is much less using O3 than H2O (~ 7V versus ~ 20V). Annealing treatment has been carried out at different temperatures in Ar atmosphere up to 700°C. Whereas the flat-band voltage shift can be reduced by annealing, the leakage current remains rather high.
Authors: Chao Cai, Qiu Ping Wang, Zhao Zhang, Jian Feng Yang
Abstract: The electroplating behavior of nanocrystalline CoNiFe soft magnetic thin film with high saturation magnetic flux density and low coercivity was investigated using cyclic voltammetry and chronoamperometry methods in conjunction with the scanning electron microscopy (SEM/EDX) and X-ray diffraction (XRD) techniques. The results show that, the co-deposition of CoNiFe alloy behaves anomalously. And the nucleation/growth process of CoNiFe ternary alloy followed 3D instantaneous mechanism at higher potentials, while in the case of lower potentials it followed 3D progressive mechanism.
Authors: Marc Avice, Ulrike Grossner, Ola Nilsen, Jens S. Christensen, Helmer Fjellvåg, Bengt Gunnar Svensson
Abstract: Al2O3 has been grown by Atomic Layer Chemical Vapour Deposition (ALCVD) on ntype 4H-SiC using O3 as an oxidant. After post-deposition, annealing at high temperature (1000°C) in Argon atmosphere for different time periods (1h, 2h, 3h) was performed. Bulk and interface properties of the as-grown as well as the annealed films were studied by electrical measurements (CV, IV, DLTS) and Secondary Ion Mass Spectrometry (SIMS) measurements. The electrical measurements show a decreasing shift of the flatband voltage indicating a diminution of the negative oxide charges with increasing annealing time. After annealing at 1000°C for 3h, the flatband voltage shift has decreased to 6V. The SIMS measurements indicate a double interface with a SiOx (x ≤ 2) interlayer in the as-grown samples while only one interface is observed after annealing, leading to improved electrical behavior of the Metal-Oxide-Semiconductor devices.
Authors: Nurul Husna Zainol, Mohd. Zharfan Mohd. Halizan, Woon Gie Chong, Zurina Osman
Abstract: Poly (methyl) methacrylate (PMMA)-based gel polymer electrolytes (GPEs) containing magnesium triflate, Mg (CF3SO3)2 salt were prepared using solution casting technique. Different concentrations of Mg (CF3SO3)2 ranging from 5 wt.% to 30 wt.% have been added into a mixture of ethylene carbonate (EC) and propylene carbonate (PC) with a fixed mass ratio of 2:1. These free-standing GPE films were characterized using electrochemical impedance spectroscopy (EIS), linear sweep voltammetry (LSV) and cyclic voltammetry (CV). The highest ionic conductivity of 1.27 x 10-3 S cm-1 is obtained from the GPE film containing 20 wt.% of Mg (CF3SO3)2 salt. The electrochemical window stability has been found in the range of-2.5 V to 2.5 V for the highest conducting GPE film. This value is considerably high enough for the GPE film to be used as electrolyte in magnesium rechargeable batteries.
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