Papers by Keyword: CVD Diamond Film

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Authors: Li Zhang, Dong Hui Wen, Shi Ming Ji, Qiao Ling Yuan, Zhen Hao Xu
Abstract: The rough surfaces and non-uniform thicknesses of chemically vapor-deposited (CVD) diamond films and substrates affect their industrial application. In recent years, many polishing and planarization methods have been reported, but each method has its relative merits. This paper reviews the necessity for processing of the CVD diamond films first. Then the processing mechanism of micro-cracking and the characteristics of mechanical polishing of diamond films are discussed. The remove form of the material and surface characteristics are compared by three mechanical polishing method, including free abrasive polishing, fixation abrasive polishing and membrane on the membrane polishing method. No matter what form of mechanical polishing process is adopted, because of its inherent characteristics and the principles of processing, mechanical polishing CVD diamond films can only be as polish processing to remove large residual. The macro-surface roughness of processing is about the 2μm. The micro-rough surface roughness is for the 40nm or so. The material removal rate is 10nm/h.
Authors: Wen Zhuang Lu, Dun Wen Zuo, Min Wang, Feng Xu
Abstract: Electroplated Cr, Ni and Cu were used as interlayer for chemical vapor deposition (CVD) diamond coating on WC–Co cemented carbide cutting tools. The electroplated interlayers were studied by Scanning Electron Microscope (SEM), Electron Probe Micro Analyzer (EPMA) and X-ray diffraction (XRD). The CVD diamond coatings were studied by SEM and Raman Scattering Spectroscopy (Raman). The experimental results show that there is diffusion bonded interface between electroplated layer and WC-Co substrate after H plasma treatment, the bond between electroplated layers and WC-Co substrate changes from mechanical bond to metallurgical bond and the adhesion becomes stronger. Electroplated Cr interlayer forms new phases of Cr3C2 and Cr7C3 under CVD conditions, while electroplated Ni and Cu interlayers do not form carbides under CVD conditions. Cr carbides have good chemical compatibility to diamond, and they are propitious to diamond nucleation and growth during the deposition period. The diamond crystal microstructure, diamond quality and adhesion on Cr interlayer are better than those on electroplated Ni and Cu interlayers.
Authors: Jin Kyo Seo, Jeong Hwan Lee, Jong Wan Park
Abstract: The crystal defects in diamonds are diverse. In other words, there are almost no perfect diamonds without impurities or dislocations. Most natural diamonds contain a considerable amount of nitrogen impurity in aggregated forms. CVD diamond films also included many crystal defects. We investigated the distribution of luminescence center of natural type Ia diamonds and CVD diamond films by various photoluminescence excitation source. Photoluminescence (PL) spectroscopy is a useful technique to provide information on defects of diamond with high sensitivity.
Authors: Li Zhang, Shao Jie Ding, Dong Hui Wen, Zhen Hao Xu, Shi Ming Ji
Abstract: CVD diamond has become the mainstream trend for the development of diamond. Its ultra precision machining is one of the key technologies for expanding the application of CVD diamond film. The efficient polishing method is studied, called accelerant polishing technology, which can lower the activation energy needed in diamond graphitization by the accelerant action of transition metal. It accelerates reaction rates of graphitization and promotes the implementation of diamond’s removal mechanism. Experimentation results indicate that the polishing method is one new type of precision polishing technology with low cost and high efficiency.
Authors: Kiyoshi Suzuki, Manabu Iwai, Tetsutaro Uematsu, Anurag Sharma
Authors: Wen Zhuang Lu, Dun Wen Zuo, Min Wang, Feng Xu
Abstract: Chemical vapor deposition (CVD) diamond coatings were deposited on cemented carbide cutting cools by an electron-assisted hot filament chemical vapor deposition (EACVD) equipment developed by the authors. The CVD diamond coatings were studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman). The experimental results show that CH4 concentration in the source gas performs great influence on the micro-structure, surface roughness, composition, residual stress and adhesion of the CVD diamond coatings. The increase of CH4 concentration results the change of diamond crystal from {111} orientation to {100} orientation, the decrease of the surface roughness and the increase of sp2 carbon in the CVD diamond coatings. A residual compressive stress exists in the CVD diamond coatings. The residual stress decreases with increasing CH4 concentration. A higher or lower CH4 concentration tends to reduce adhesion stress of the continuous CVD diamond coatings.
Authors: Hung Yin Tsai, Chia Jen Ting, Kei Lin Kuo, Chang Pin Chou
Abstract: The laser ablation technique is one option for micro-machining and patterning of diamond film. A UV YAG laser with higher energy density can remove or destroy the diamond film more efficiently than the excimer laser. That is, the UV YAG laser not only provides faster etching rate on the diamond film, but also requires less processing and maintenance cost. In the current study, synthetic diamond films with grain size of 30 μm were deposited on silicon substrate by microwave plasma enhanced chemical vapor deposition (MPCVD) in the CH4/H2 mixture atmosphere. A pulsed UV YAG laser (λ = 355 nm, 10 kHz) was employed to machine and remove the diamond film. The diamond film surface was analyzed by SEM and Raman spectroscopy after the laser machining. The beam size of YAG laser was adjusted to between 0.1 mm and 1.5 mm by the trepan mechanism to approach the following defined scanning width. In order to shape a 4-inch diamond wafer into a microstructure, the scanning width of the UV YAG laser was defined to 0.1 mm, 0.75 mm and to 1.5 mm in several loops. The results show that the laser-polishing effect can be applied to the pretreatment of mechanical polishing of diamond wafer in the condition of 0.75 mm scanning width in 3 loops. From Raman spectrum, it could prove the mechanism of carbon burning reaction during the laser processing and the residual carbon existing in the laser-patterned area. The surface of diamond film is strongly affected by the laser processing and a better result from the parameter of 0.75 mm scanning width in 3 loops is shown in the current study.
Authors: Shu Tao Huang, Li Zhou, Li Fu Xu
Abstract: Super-high speed polishing of diamond film is a newly proposed method due to its outstanding features such as low cost and simple apparatus. The interface temperature rise is due to the friction force and the relative sliding velocity between the CVD diamond film and the polishing metal plate surface. In this paper, the interface temperature rise in super-high speed polishing of CVD diamond film was investigated by using the single-point temperature measurement method. Additionally, the influence of polishing plate material on the characteristics of super-high speed polishing has been studied. The results showed that cast iron is not suitable for super-high polishing, while both 0Cr18Ni9 stainless steel and pure titanium can be used for the super-high polishing of CVD diamond film. The quality and efficiency of polishing with 0Cr18Ni9 stainless steel plate is much higher than those of pure titanium, and the material removal rate could reach to 36-51 m/h when the polishing speed and pressure are 100 m/s and 0.17-0.31 MPa, respectively.
Authors: Feng Lian Sun, Feng Gu, Zhi Li Zhao, Heng Ze Xian
Abstract: CVD diamond thick film was brazed to cemmented carbide using a Ag-Cu-Ti active filler metal. The brazing process was performed in a vacuum furnace under different processing condition. The interfacial microstructure and characterization between diamond and Ag-Cu-Ti filler metal were studied by SEM, EPMA and EDX. The morphology and distribution of new compound are shown for the first time (Figs). Results illustrate that a small amount of new compound TiC, TiCu compound exist in the interface. TiC layer exists in the interface and it's thickness is variational with the varying of processing condition such as peak heating temperature, keeping time and so on. New compound TiC accretes with the surface atoms of diamond in a special section, and particular orientation relationships are occasionally observed by examining the fracture section. TiCu layer near TiC exists in the interface. It is worth notice that too much TiC and TiCu in interface could weaken join strength because TiC and TiCu are brittle.
Authors: X.J. Wu, Feng Xu, Dun Wen Zuo, Wen Zhuang Lu, M. Wang
Abstract: Chemical vapor deposited (CVD) diamond film has a series of outstanding properties. However, it can not be easily machined by conventional technologies available currently for its high hardness and stability. Laser processing diamond film method can be an efficient way to process diamond film because of its high energy density. The mechanisms of laser processing diamond film are thermal oxidation, graphitization and evaporative ablation of graphite. Temperature distribution is of great importance to understand these complex phenomena taking place during the process because different temperatures lead to different physical and chemical changes of diamond. In this paper, the finite element method (FEM) software ANSYS is applied to calculate the temperature distribution. The relation between etching depth and laser machining parameters (laser power and scanning speed) is presented. The proper parameter ranges of laser power and scanning speed for a certain etching depth is also investigated with this method.
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