Papers by Keyword: DC Magnetron Sputtering

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Authors: Xian Ming Yang, Lin Liu, Juan Xiu Lin
Abstract: With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Based on orthogonal test table L18 (35), the effects of process parameters included water partial pressure, work pressure, substrate temperature, oxygen flow rate and sputtering power, on the optoelectronics properties of ITO thin films were investigated in detail(systematically). Calibration of sheet resistance transmittance, atomic force microscope, and X-ray diffraction were employed to characterize the ITO films.
Authors: Ruo Fan Zhang, Ren Cheng Wang, Jia Cheng, Yi Jia Lu
Abstract: The primary goal of this study is to optimize the dynamic axial magnetic field distribution in magnetron sputtering system, guiding the target ions to project directly to the substrate. A group of electromagnetic coils were set up to generate an auxiliary axial magnetic field. The configuration of axial magnetic field in different electrifying modes on coils were simulated using numerical integration. Based on the general theoretical results, this paper proposed an optimization of coil arrangement and electrifying modes for a C-shape direct current(DC) magnetron. A 3D model of the coils was set up and the finite element analysis results verified the accuracy of theoretical results. Consequently, this study proposed an arrangement and electrified scheme of electromagnetic coils to provide a dynamic auxiliary axial magnetic field, which could match with the shape and movement of the primary magnetron.
Authors: Yu Zhen Yuan, Hui Wang
Abstract: Zr,Ga co-doped ZnO transparent conductive films were deposited on glass substrates by DC magnetron sputtering at room temperature.The influence of sputtering pressure on the structural,electrical,and optical properties of Zr,Ga co-doped ZnO films was investigated by X-ray diffraction,scanning electron microscopy (SEM),digital four-point probe,and optical transmission spectroscopy.The lowest resistivity of the Zr,Ga co-doped ZnO film is 3.01×10-4Ω﹒cm.All the films present a high transmittance of above 91% in the visible range.These results make the possibility for liquid crystal display (LCD) and UV photoconductive detectors.
Authors: Hua Fu Zhang, Han Fa Liu, Chang Kun Yuan
Abstract: Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) and aluminium-doped zinc oxide (ZnO:Al) thin films were deposited on glass substrates by direct current (DC) magnetron sputtering at room temperature. The crystallinity of ZnO:Zr and ZnO:Al thin films increases as the target-to-substrate distance decreases, and the crystallinity of ZnO:Zr films is found to be always better than that of ZnO:Al films prepared under the same deposition conditions. As the target-to-substrate distance decreases, the resistivity of both film types decreases greatly while the optical transmittance does not change much with the variation of the distance. When target-to-substrate distance is 4.1 cm, the lowest resistivity of 6.0×10-4 Ω·cm and 5.7×10-4 Ω·cm was obtained for ZnO:Zr and ZnO:Al films, respectively. The figure of merit arrived at a maximum value of 3.98×10-2 Ω for ZnO:Zr films lower than 5×10-2 Ω for ZnO:Al films.
Authors: Ya Qiao, Yuan Lu, Hua Yang, Yong Shun Ling
Abstract: Low valence vanadium oxide thin film was deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target. And then it was annealed in an atmosphere of oxygen/argon mixture at the temperature of 450°C for 2hours to obtain VO2 thin film possessing the ability of phase transition. The XRD patterns and resistance-temperature (R-T) curves of the film before and after the annealing were given. The results show that: the as-deposited film, whose main component is V2O3, presents no phase transition and its resistance changes from 1.26 kΩ~1.01kΩ while its temperature rising from room temperature to 80°C; the annealed film, whose main component is VO2, presents a phase transition when its temperature rising from room temperature to 80°C and its resistance changes from 10kΩ to 60Ω, more than two orders. And the phase transition temperature of the film deposited is only 30°C.
Authors: Mao Dong Zhu, Dong Ping Zhang, Yi Liu, Kai Yang, Guang Xing Liang, Zhuang Hao Zheng, Ping Fan
Abstract: W-doped VO2 films were prepared by DC reactive magnetron sputtering with various substrate bias. The microstructure, surface morphology, electrical and optical performances of the films were characterized by x-ray diffraction, scanning electron microscope, four-point probe method and spectrophotometer, respectively. The effect of substrate bias on microstructure, electrical and optical properties of sputtered W-doped VO2 films was studied. The XRD results reveal that all samples exhibit preferential VO2 (011) lattice orientation except the as-grown sample in our experiment. All the samples applied substrate bias show some degree optical switching performance in IR range, while the thermochromic phenomena was observed from resistance-temperature dependence plot only for the samples of substrate bias varied from-100V to-200V. This indicate that the optical and electrical properties of W-doped VO2 films have different sensitivity to substrate bias. Optimal substrate bias of-200V sample shows fine semiconductor-metal-transition performance.
Authors: Pornpipat Boosabarat, Kanchaya Honglertkongsakul, Dusit Ngamrungroj, Nirun Witit-Anun, Surasing Chaiyakun
Abstract: Deposition of aluminum and zinc targets was carried out by DC magnetron sputtering to produce aluminum doped zinc oxide (AZO) thin films. These films were deposited on quartz, glass and silicon substrates under 5.5x10-3 mbar pressure. At a ratio of argon gas to oxygen gas (Ar:O2) of 5:10 and a voltage at zinc target of260 V, AZO thin films were deposited at different currents at aluminum target such as 900, 1,000, 1,100 and 1,200 mA. Effect of current at aluminum target on the structural, optical and electrical properties of resulting films was studied. Structural characterization by X-ray diffraction (XRD) technique and Energy Dispersive X-Ray Spectroscopy (EDS) confirmed incorporation of aluminum in ZnO lattice. The thickness measurement by Scanning Electron Microscope (SEM) showed that the thickness of AZO thin films is in the range of 270–350 nm. An average transmittance of above 80% in the visible wavelength region was obtained for aluminum doped zinc oxide. The optical direct bandgap and the resistivity of AZO thin films were found in the range 3.3-3.5eV and 6.0x10-1-9.0x10-1 Ωcm; respectively.
Authors: C. Salawan, A. Muakngam, B. Sukbot, K. Aiempanakit, Supattanapong Dumrongrattana
Abstract: In this work, we present the effect of DC power from 100 W to 500 W on the structural and hydrophilic activity of TiO2 films. The TiO2 films were prepared by DC magnetron sputtering on the glass substrate without any external heating. The structure of TiO2 films were analyzed by atomic force microscope and X-ray diffraction. XRD patterns indicated the films were amorphous. The surface roughness and grain size were enlarged by the increasing of the DC power while the substrate temperature was climbed up with the increasing of the DC power. From the point of energetic ion bombardment, it was related with DC power between sputtering processes. The hydrophilic activity of TiO2 films were analyzed by the contact angle meter. The water contact angle decrease with increasing of the DC power.
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