Papers by Keyword: Dislocation Reactions

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Authors: M.P. Butrón-Guillén, Carlos Sergio da Costa Viana, John J. Jonas
Authors: Vladimir Vdovin, Oleg Vyvenko, Evgenii Ubyivovk, Oleg Kononchuk
Abstract: Structures of Si(001) hydrofillic bonded wafers have been studied by transmission electron microscopy. Model of three-fold nods generation during interaction of intersecting mixed and screw dislocations has been suggested and applied to analyze geometrical features of dislocation networks. Possible mechanisms of dislocation generation at the interface between Si bonded wafers are discussed.
Authors: Vladimir Starenchenko, Dmitrii Cherepanov, Raisa Kurinnaya, Marina Zgolich, Olga Selivanikova
Abstract: Dislocation junctions, formed as a result of dislocation reactions, affect the plastic strain process, at least, for two reasons. First of all, junctions serve as barriers to shear-forming dislocations and restrict their path, therefore, the size of the shear zone. Sizes of the shear zone are determined by the density of reacting dislocations in non-coplanar slip systems, forming long enough barriers in the form of dislocation junctions. Secondly, non-breaking dislocation junctions are accumulated inside the shear zone, which leads to an increase in the intensity of the dislocation density accumulation.The present work is devoted to the study of the influence of dislocation junctions on accumulation of the density of dislocation debris (debris junctions) due to formation of stable junctions. For this purpose, the probability density function of lengths in non-breaking junctions is calculated. The model of dislocation interactions, built by the authors of the paper for FCC single crystals, is used.
Authors: M. Sum, M.P. Butrón-Guillén, Carlos Sergio da Costa Viana, John J. Jonas
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