Papers by Keyword: Doping Effect

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Authors: Hai Feng Zhang, Cheng Yong Wang, Wen Hui Duan, R.C. Fang
Authors: Oleg Velichko, Olga Burunova
Abstract: Simulation of arsenic clustering in Si at a temperature of 750 degrees Celsius has been carried out. It has been shown that considering the formation of singly or doubly negatively charged clusters that incorporate one or two arsenic atoms and point defects, one obtains a good fit to the measured values of electron density. It is supposed that we have the initial stage of clustering, when the concentration of complexes with one arsenic atom incorporated is high enough and the diffusion of these mobile particles provides for the formation of more stable clusters incorporating two arsenic atoms.
Authors: Ze Ming He, Jan Ma, Ruifang Zhang, Yunzhong Chen
Authors: Zbigniew Jurasz, Krzysztof Adamaszek, Romuald Janik, Zbigniew Grzesik, Stanisław Mrowec
Abstract: Detailed investigations of nonstoichiometry as well as chemical and self-diffusion in nickel oxide have shown that doubly ionised cation vacancies and electron holes are the predominant defects in this material. The present work is an attempt to demonstrate that aliovalent impurities (Cr, Al, Na and Li) may considerably influence the concentration of these defects and, consequently, the oxidation rate of nickel at high temperatures. It has been shown that small amounts of tri-valent impurities (Cr, Al) bring about an increase of the oxidation rate, while mono-valent ones (Li, Na) decrease the rate of oxidation. These phenomena may satisfactorily be explained in terms of a doping effect. All experiments have been carried out as a function of temperature (1373-1673 K) and oxygen pressure (1-105 Pa) and consequently, it was possible to determine the influence of impurities not only on the oxidation rate but also on the activation energy of reaction and its pressure dependence. The results of these investigations could again be elucidated in terms of doping effect.
Authors: Masahiro Kajitani, Motohide Matsuda, Akinori Hoshikawa, Takashi Kamiyama, Fujio Izumi, Michihiro Miyake
Abstract: Doping effects of Sr and/or Mg on the crystal structures of LaGaO3 perovskites were investigated. The doping with Mg into Ga-site in LaGaO3 led to structural change from the orthorhombic primitive lattice (Pbnm) to the orthorhombic body-centered lattice (Ibmm) at room temperature. The orthorhombic cell (Ibmm) of LaGa0.9Mg0.1O2.95 changed to the monoclinic (I2/a) by doping with Sr into La site. Neutron powder diffraction analyses revealed that these compounds had GaO6 octahedral tilt. The GaO6 octahedral tilt angles were reduced with doping with Sr and/or Mg.
Authors: Bo Ping Zhang, Jing Feng Li, Yan Dong, Takashi Iijima
Abstract: A series of Pb(Ti1-xAlx)O3, Pb(Ti1-xNbx)O3 and Pb(Ti1-xAlx/2Nbx/2)O3 thin films were fabricated onto Pt/Ti/SiO2/Si(100) substrates using a chemical solution deposition process. The dielectric constant of the Pb(Ti1-xAlx)O3 thin films increased with increase of aluminum content, while a maximum dielectric constant value was observed for the Pb(Ti1-xNbx)O3 and Pb(Ti1 xAlx/2Nbx/2)O3 thin films when the doping contents were 10 and 20 mol%, respectively. The dielectric constant of the Pb(Ti0.8Al0.1Nb0.1)O3 thin film is about 600, being two times higher than those of Pb(Ti0.9Al0.1)O3 and Pb(Ti0.9Nb0.1)O3 thin films. The Pb(Ti0.8Al0.1Nb0.1)O3 thin film showed less than 10-7 A/cm2 current density at ±150 kV/cm, being superior to the leakage property of the PbTiO3, Pb(Ti0.9Al0.1)O3 and Pb(Ti0.9Nb0.1)O3 thin films. The co-doping of aluminum and niobium is more effective to increase the dielectric and ferroelectric properties as compared with the individual aluminum or niobium doping.
Authors: Li Qun Chen, Zheng Chen Qiu
Abstract: Using the first-principles self-consistent discrete variational method based upon density functional theory, we investigated the energetics and the electronic structure of the 3d impurities Ni and Co in a kink on the [100](010) edge dislocation (ED) in bcc iron. The calculated results show that the interatomic energies between the impurity atom and the neighboring host atoms decrease. The bonding for the impurity atom (Ni, Co) and the neighboring host Fe atoms is weaker than that for an Fe atom at the X site and the corresponding atoms in the clean kink. These results indicate that sideways motion of the kink in the <100>{010} ED is accelerated by an impurity atom such as Ni or Co and that, consequently, the presence of impurities increases the dislocation mobility, thus leading to solid-solution softening.
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