Papers by Keyword: Dual Configuration

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Authors: Seung Hoon Nahm, Jeong Min Kim, Jong Seo Park, Kwang Min Yu, Dong Kyun Kim, Am Kee Kim, Dong Jin Kim
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Authors: Jong Seo Park, Un Bong Baek, Jeong Min Kim, Seung Hoon Nahm, Bong Young Ahn
Abstract: Several nondestructive evaluation methods were attempted for the estimation of the creep damage of degraded 2.25Cr-1Mo steel. The specimens of three different aging periods were prepared by an isothermal heat treatment at 430°C, 482°C, and 515°C. The effect of probe configuration on the electrical resistivity was studied. Single configuration method and dual-configuration method were utilized for measuring electrical resistivity. The electrical resistivity was determined by a standard DC four-point probe method at 24±0.5°C. Indentation test, magnetic characteristics test and ultrasonic test were carried out to investigate the correlation between the major characteristics and aging parameter. Unlike the electrical resistivity characteristics, ultrasonic attenuation coefficient and indentation characteristics did not show a relation to Larson-Miller parameter. However, a correlation between the electrical resistivity and aging parameter was identified, which allows one to estimate the extent of material degradation.
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Authors: Nor F. Za’bah, Kelvin S.K. Kwa, Anthony O'Neill
Abstract: A top-down silicon nanowire fabrication using a combination of optical lithography and orientation dependent etching (ODE) has been developed using <100> Silicon-on Insulator (SOI) as the starting substrate. Initially, the samples were doped with phosphorus using the diffusion process resulting in carrier concentration of 2 x 1018 cm-3. After the silicon nanowires were fabricated, they were measured using a dual configuration method which is similar to the four-point probe measurement technique to deduce its resistivity. The data obtained had suggested that doping distribution in the silicon nanowires were lower and this may have been affected by the surface depletion effect. In addition, with respect to carrier mobility, the effective mobility of electrons extracted using the four-point probe data had demonstrated that the mobility of carriers in the silicon nanowire is comparable with the bulk mobility. This is most probably due to the fact that in this research, the quantum confinement effect on these nanowires is not significant.
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