Papers by Keyword: Electromigration

Paper TitlePage

Authors: T.V. Zaporozhets, I.V. Sobchenko, Andriy Gusak
Abstract: The 3D Monte Carlo scheme is proposed for simulation of simultaneous self-consistent current redistribution, surface diffusion, drift and void migration and coalescence at the interface metal/dielectric. Results of simulation as well as simple phenomenological model demonstrate a possibility of trapping at and migration along the grainboundaries (GBs). Critical size of “detrapping” after coalescence has been estimated.
Authors: Q. Humayun, U. Hashim
Abstract: Fabrication techniques for Metal-molecule-metal junction electrodes suitable to study electron tunneling through metal junctions are reviewed. The applications of current technologies such as mechanical break junction, electromigration, shadow mask lithography, focused ion beam deposition, chemical and electrochemical plating, electron-beam lithography, in fabricating vacant junction electrodes are briefly described. For biomolecular sensing applications, the size of the junction electrodes must be small enough to allow the biomolecule inserted into the junction space to connect both leads to keep the molecules in a relaxed and undistorted state. A significant advantage of using Metal-molecule-metal junction electrodes devices is that the junction can be characterized with and without the molecule in place. Any electrical artifacts introduced by the electrode fabrication process are more easily deconvoluted from the intrinsic properties of the molecule.
Authors: C. Schmidt, J.P. Dekker, P. Gumbsch, E. Arzt
Authors: Eugene Olevsky, S. Kandukuri, Ludo Froyen
Abstract: Spark-Plasma Sintering (SPS) involves rapid heating of powder by electric current with simultaneous application of external pressure. Numerous experimental investigations point to the ability of SPS to render highly-dense powder products with the potential of grain size retention. The latter ability is of significance for the consolidation of nano-powder materials where the grain growth is one of the major problems. A model for spark-plasma sintering taking into consideration various mechanisms of material transport is developed. The results of modeling agree satisfactorily with the experimental data in terms of SPS shrinkage kinetics.
Authors: Jian She Tang, Brian J. Brown, Steven Verhaverbeke, Han Wen Chen, Jim Papanu, Raymond Hung, Cathy Cai, Dennis Yost
Abstract: As device features scale down to 90nm and Cu/low-k films are employed for back end interconnects, post etch and ash residue cleaning becomes increasingly challenging due to the higher aspect ratio of the features, tighter CD control requirements, sensitivity of the low-k films, and the requirement for high wet etch selectivity between CuxO and Cu. Traditional solvent based cleaning in wet benches has additional issues such as wafer cross-contamination and high disposal cost [1, 2]. We have developed a novel aqueous solution (AQ) based single wafer cleaning process to address these challenges. The results of physical characterization, process integration electrical data, and process integration reliability data such as electromigration (EM) and stress migration data are presented. The main conclusions can be summarized as follows: (1) The single wafer cleaning process developed on the Oasis™ system can clean post etch residues and simultaneously clean the wafer front side and backside metallic contaminants; (2) In terms CuxO and Cu wet etch selectivity, CD loss control, the Oasis™ aqueous single wafer clean process is superior to the bench solvent cleaning process; (3)The Oasis aqueous cleaning process shows no undercut below etchstop due to the very low Cu etch amount in one cleaning pass, therefore the electromigration and stress migration performance of the aqueous Oasis processed wafers is clearly better than that of the solvent bench processed wafers.
Showing 1 to 10 of 69 Paper Titles