Papers by Keyword: Ellipsometry

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Authors: Keiko Kouda, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida
Abstract: We have investigated the oxidation process of SiC (000-1) C-face at low oxygen partial pressures using an in-situ spectroscopic ellipsometry. The oxide growth rate decreased steeply at the early stage of oxidation and then slowly decreased with increasing oxide thickness. The initial oxide growth rate was almost proportional to the oxygen partial pressure for both the polar directions. This result suggests that the initial interfacial reaction rate is constant regardless of the concentration of oxidants reaching the interface.
Authors: Bing Jing Lin, Hong Tao Zhu, A. Kiet Tieu, Gerry Triani
Abstract: An ultra- thin Ti film with a thickness of less than 30 nm was deposited on the surface of a silicon wafer by the filtered arc deposition system. A novel technique was adopted to create a height step between the coated area and non-coated area (silicon wafer) during deposition. The surface morphology and thickness of the film was detected by atomic force microscopy (AFM). The AFM results showed that the deposited film formed a smooth structure on the silicon wafer and the height step between the coating and silicon wafer was clear enough to give the thickness of the deposited film. The composition of the deposited film was detected by a combined use of Ellipsometry and AFM. Natural oxidisation of Ti (TiO2) was found on the top of the Ti film after deposition, and the thickness of TiO2 was determined by ellipsometry to be about 0.6 nm.
Authors: Katja Tonisch, Robert Benzig, Gernot Ecke, Jörg Pezoldt
Abstract: The growth of AlGaN solid solutions on 3C-SiC(111)/Si(111) is demonstrated. The residual stress of the grown layer was investigated by high resolution X-ray diffraction (HRXRD) and infrared ellipsometry. Analysis of the HRXRD data showed that the observed lattice distortion was caused partially by hydrostatic pressure and partially by biaxial tension. The residual stress depends on the layer composition and weakly on the growth temperature.
Authors: Morten Kildemo, M.B. Mooney, P.V. Kelly, C. Sudre, G.M. Crean
Authors: William Chism, Alain C. Diebold, Jesse Canterbury, Curt Richter
Authors: L. Asinovsky, S. Fox, E. Karagiannis, M. Schroth, J.J. Sweeney
Authors: E. Vogli, Fabian Hoffmann, E. Bartis, G. S. Oehrlein, Wolfgang Tillmann
Abstract: It has been established that hardness and density of diamond-like carbon (DLC) layers can be raised by increasing ion energy during deposition, decreasing H-content and by increasing sp3-fraction. To confirm differences in hydrogen content of hydrogen containing and hydrogen free DLC films deposited at different bias voltages, layers were etched in oxygen atmosphere in a capacitively coupled plasma device. By employing real-time ellipsometry measurements, the H-content of the hydrogen containing a-C:H layers were estimated by determining the optical constants n and k (n-real part and k-imaginary part of the refractive index). In addition, DLC layers were analyzed by X-ray photoelectron spectroscopy to estimate the ratio of sp²- and sp³-hybridization. The mechanical and tribological properties of the coatings were evaluated by means of nanoindentation and ball-on-disc-tests. Finally correlations between these properties, H-content and sp3/sp2-ratio were obtained in an effort to explain different tribological behaviors of DLC-layers.
Authors: Tohru Hara, Y. Kakizaki, Hisao Tanaka, M. Inoue, K. Kajiyama, T. Yoneda, Kohei Sekine, K. Masao
Authors: Seung Jae Moon
Abstract: The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.
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