Papers by Keyword: Etching

Paper TitlePage

Authors: Ai Isohashi, Yasuhisa Sano, Shun Sadakuni, Kazuto Yamauchi
Abstract: A novel abrasive-free polishing method called catalyst-referred etching (CARE) has been developed. CARE can be used to chemically planarize a silicon carbide (SiC) surface with an etching agent activated by a catalyst. Platinum (Pt) and hydrofluoric (HF) acid are used as the catalyst and etchant, respectively. CARE can produce an atomically flat and crystallographically highly ordered surface of 4HSiC (0001) with a root-mean-square roughness of less than 0.1 nm regardless of the cut-off angle. However, industrial use of CARE is difficult because of HF acid usage. In this study, pure water was investigated as an alternative etchant to HF acid. We examined CARE using pure water by applying it to the planarization of a 4HSiC substrate and observed a feasible performance. The removal mechanism is considered to be the dissociative adsorption of water molecules to the SiC bonds of the topmost Si atom, namely the hydrolysis of the back bond, and the catalysis of Pt is considered to enhance the reaction. CARE with pure water is expected to represent a breakthrough method for surface processing of SiC, and will be widely applied in industrial processes such as planarization after high temperature processing in device fabrication.
722
Authors: Hitoshi Habuka, Keiko Tanaka, Yusuke Katsumi, Naoto Takechi, Katsuya Fukae, Tomohisa Kato
Abstract: The morphology of a single-crystalline 4H-silicon carbide (SiC) substrate surface after etching by chlorine trifluoride (ClF3) gas was studied over the wide temperature range of 673-1573 K at atmospheric pressure in a horizontal cold wall reactor. The Si-face and C-face showed pitted surfaces at low temperatures; the pits tended to become small and shallow with the increasing substrate temperature. The etching for 0.5 min at the substrate temperature of 1573K and at the ClF3 gas concentration of 1% could maintain a specular surface on both the Si-face and C-face 4H-SiC, the root-mean-square roughness of which was comparable to that of the substrate before etching.
787
Authors: Yue Ke, Catherine Moisson, S. Gaan, R.M. Feenstra, Robert P. Devaty, Wolfgang J. Choyke
Abstract: The effects of initial surface morphology on the early stages of porous SiC formation under highly biased photoelectrochemical etching conditions are discussed. We etched both Si-face and C-face polished n-type 6H SiC with different surface finishes prepared either by mechanical polishing or by chemical mechanical polishing at NOVASiC. For both Si-face and C-face porous SiC samples, a variety of surface and cross sectional porous morphologies, due to different surface finishes, are observed. The proposed explanation is based on the spatial distribution of holes at the interface of the SiC and electrolyte inside the semiconductor.
743
Authors: O. Raccurt, F. Arnaud d'Avitaya, E. Charlaix, T. Vareine, F. Tardif
73
Authors: Ying Tang Zhang, Hua Wa Yu, Qiu Ping Wang, Guang Xi Zhou, Jun Fang Wu
Abstract: The original grating is etched by using the nanometer etching function of Scanning Probe Microscopy (SPM). There are five grooves etched on the surface of polymer material. The grating constant is 796.87 nm, so the fringe density is 1254 lp/mm. Diffraction pattern of the original grating is obtained on Michelson interferometer. A new method of making original grating is found. Since the Nominal Tip Radius of Curvature (NTRC) of Etched Silicon Probe (ESP) of used Veeco SPM is 5-10 nm, the etching grating should have fringe density of 50 000 -100 000 lp/mm.
4077
Authors: Bart Onsia, Thierry Conard, Stefan De Gendt, Marc M. Heyns, I. Hoflijk, Paul W. Mertens, Marc Meuris, G. Raskin, Sonja Sioncke, I. Teerlinck, Antoon Theuwis, Jan Van Steenbergen, Chris Vinckier
27
Authors: Luciano Mule'Stagno
753
Authors: Takeshi Okamoto, Yasuhisa Sano, Kazuma Tachibana, Kenta Arima, Azusa N. Hattori, Keita Yagi, Junji Murata, Shun Sadakuni, Kazuto Yamauchi
Abstract: Catalyst-referred etching (CARE) is an abrasive-free planarization method. We used 3-inch and 2-inch 4H-SiC (0001) 4° off-axis substrates to investigate the processing characteristics that are affected by the substrate diameter. The surface roughness of the 3-inch substrate was extremely smooth over the whole substrate. The surface roughness and removal rate of the 3-inch substrate were approximately the same as those of the 2-inch substrate.
493
Authors: S. Karlsson, Nils Nordell
363
Authors: M.I. Maksud, Mohd Sallehuddin Yusof, M. Mahadi Abdul Jamil
Abstract: This paper will explain a study of several printing process (screen printing, flexography, gravure and ink jet printing) for RFID antennas transponder. The potential of each process will also be investigated. A current sample of RFID is selected, and the antenna processes have been identified, and the comparison of antenna read range will be exhibited.
468
Showing 1 to 10 of 162 Paper Titles