Papers by Keyword: Exciton

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Authors: N. Žurauskienė, Stanislovas Marcinkevičius, G. Janssen, E. Goovaerts, A. Bouwen, Paul M. Koenraad, J.H. Wolter
Authors: V. Gulbinas, R. Kananavičius, L. Valkūnas, H. Bässler, V. Sundström
Authors: Dong Po Wang, Li Wei Tu
Abstract: An InN film was grown on sapphire (c-plane) by plasma-assisted molecular beam epitaxy, and its photoluminescence at 10 K and photoreflectance (PR) spectra from 10 K to 110 K were measured. Some prominent features in the PR spectra were observed in the infrared region below 120 K. The signals become too weak to observable for temperature above 110K. Furthermore, the binding energy of InN exciton was estimated to be 9.43 meV, which is equal to kBT at 109K. Therefore, the features in the PR spectra were assigned to the A, B, and C excitonic transitions associated with the direct gap of wurtzite InN. The thus obtained energies of the A, B, and C excitonic transitions versus temperature were fitted well by Varshini’s equation. The energies of the A, B, and C excitonic transitions at room temperature obtained by the best fit of Varshni’s equation are 0.738, 0.746, and 0.764 eV, respectively.
Authors: Per Olof Holtz, Chih Wei Hsu, Anders Lundskog, K. Fredrik Karlsson, Urban Forsberg, Erik Janzén
Abstract: InGaN quantum dots (QDs) formed on top of GaN pyramids have been fabricated by means of selective area growth employing hot wall MOCVD. Upon regrowth of a patterned substrate, the growth will solely occur in the holes, which evolve into epitaxially grown wurtzite based pyramids. These pyramids are subsequently overgrown by a thin optically active InGaN well. The QDs are preferably nucleating at the apices of the pyramids as evidenced by the transmission electron microscopy (TEM). The emission from these QDs have been monitored by means of microphotoluminescence (μPL), in which single emission lines have been detected with a sub-meV line width. The μPL measurements undoubtedly reveal that the QDs are located in the apexes of the pyramids, since the sharp emission peaks can only be monitored as the excitation laser is focused on the apices in the µPL. It is also demonstrated that the emission energy can be changed in a controlled way by altering the growth conditions, like the growth temperature and/or composition, for the InGaN layers. The tip of the GaN pyramid is on the nm scale and can be made sharp or slightly truncated. TEM analysis combined with µPL results strongly indicate that the Stranski-Krastanow growth modepreferably is taking place at the microscopic c-plane truncation of the GaN pyramid. Single emission lines with a high degree of polarization is a common feature observed for individual QDs. This emission remains unchanged with increasing the excitation power and sample temperature. An in-plane elongated QD forming a shallow potential with an equal number of electrons and holes is proposed to explain the observed characteristics of merely a single exciton emission with a high degree of polarization.
Authors: C.I. Harris, Bo Monemar, P.O. Holtz, M. Sundaram, J.L. Merz, A.C. Gossard
Authors: G. Stollhoff, Hubert Scherrer
Authors: E. Radzhabov, A.I. Nepomnyashikh
Authors: Chun Ping Li, Li Zhang, Chang Jie Liu, Ge Gao
Abstract: High yield ZnO nanorods are synthesized by a simple wet chemical method. The crystal morphology and structure of the ZnO nanorods are examined by transmission electron microscopy (TEM) and X-Ray Diffraction (XRD), respectively. The properties of the excitonic luminescence are investigated by temperature dependent photoluminescence (PL) spectra. Barely observed visible emission band indicates the good optical quality of the ZnO nanorods and the abnormal position and intensity changes of the emission peaks indicates the localization property of exciton.
Authors: A. Schülzgen, E. Runge, F. Henneberger, Reinhard Zimmermann
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