Papers by Keyword: Extended Defects

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Authors: Simona Binetti, Alessia Le Donne, Maurizio Acciarri, M. Cerminara, Sergio Pizzini
Authors: M. Kaniewska, J. Kaniewski, Anthony R. Peaker
Authors: N. Vouroutzis, Mikael Syväjärvi, J. Stoemenos, Rositza Yakimova
Authors: Nadeemullah A. Mahadik, Robert E. Stahlbush, Joshua D. Caldwell, Michael J. O'Loughlin, Albert A. Burk
Abstract: The effect of extended defects on carrier lifetime was investigated in 140 um thick 4H-SiC epilayers using whole wafer ultraviolet photoluminescence (UVPL) and microwave photoconductive decay (uPCD) mapping. Half-loop arrays (HLA) seen in the UVPL images showed a corresponding lifetime degradation in the same region, even before expansion of the HLAs to form SFs. Lifetime lowering was also seen for a defect comprising of a small 3C-SiC inclusion with a larger misoriented 4H-SiC region. Additionally, formation of slip planes after high temperature annealing was observed, which consequently shows a lifetime reduction in that region.
Authors: Nina Khuchua, Marina Tigishvili, Revaz Melkadze, Nugzar Dolidze, Nodar Gapishvili, Zurab Jibuti, Galina Davbeshko, V. Romanyuk
Abstract: For specific modification of the fundamental optical and photoelectrical properties of silicon transparent for wavelengths beyond 1.1μm, boron ions have been implanted into n-type wafers at doses of 1 х 1013 cm-2–1 х 1015 cm-2 followed by annealing at 900 °C and 1000 °C (20 min). The IR reflection spectra, Raman spectroscopy and scanning electron microscopy data have been compared with the photosensitivity spectra (1.4–2.2 μm) and with the integrated photoresponse in the IR (1.0–4.1 μm) and UV (0.25–0.4 μm) regions. These studies allow for materials engineering to obtain new data on the influence of defect formation on the optical properties of the material and to evaluate the technological conditions for practical application of the modified material.
Authors: Kendrick X. Liu, X. Zhang, Robert E. Stahlbush, Marek Skowronski, Joshua D. Caldwell
Abstract: Material defects such as Si-core and C-core partial dislocations (PDs) and threading screw dislocations (TSDs) and threading edge dislocations (TEDs) are being investigated for their contributions to device performances in 4H-SiC. Non-destructive electroluminescence and photoluminescence techniques can be powerful tools for examining these dislocations. In this report, these techniques were used to reveal the different spectral characteristics for the mentioned dislocations. At higher injection levels, both the Si-core and C-core PDs possessed a spectral peak at 700 nm. However, at lower injection levels, the spectral peak for the Si-core PD remained at 700 nm while the peak for the C-core moved to longer wavelengths. For the threading dislocations, TSDs possessed a peak between 800 and 850 nm while the TEDs possessed a peak at 600 nm independent of the injection levels.
Authors: Y. Zaitsu, K. Osada, T. Shimizu, Satoshi Matsumoto, M. Yoshida, Eisuke Arai, Takeji Abe
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