Papers by Keyword: Extended Defects

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Authors: M.M. De Souza, E.M. Sankara Narayanan
Authors: Edward M. Sanchez, V.D. Heydemann, Gregory S. Rohrer, Marek Skowronski, J. Solomon, Michael A. Capano, W.C. Mitchel
Authors: J. Giocondi, Gregory S. Rohrer, Marek Skowronski, Vijay Balakrishna, G. Augustine, H. McD. Hobgood, R.H. Hopkins
Authors: Fuccio Cristiano, B. Colombeau, Caroline Bonafos, A. Altibelli, G. Benassayag, A. Claverie
Authors: Ryohei Tanuma, Masahiro Nagano, Isaho Kamata, Hidekazu Tsuchida
Abstract: This paper describes 3D imaging of extended defects in 4H-SiC using optical second-harmonic generation (SHG) and two-photon-exited photoluminescence (2PPL). SHG selectively yields the 3D images of 3C-inclusions in a 4H-SiC epilayer, while 2PPL provides 3D images of 3C-inclusions, 8H stacking faults and single Shockley stacking faults. 2PPL band-edge emission visualizes dislocation lines of threading screw dislocations and threading edge dislocations, the tilt angles of which are evaluated.
Authors: Bruno Baccus, Eric Vandenbossche
Authors: Michael Seibt, Philipp Saring, Philipp Hahne, Linda Stolze, M.A. Falkenberg, Carsten Rudolf, Doaa Abdelbarey, Henning Schuhmann
Abstract: This contribution summarizes recent efforts to apply transmission electron microscopy (TEM) techniques to recombination-active extended defects present in a low density. In order to locate individual defects, electron beam induced current (EBIC) is applied in situ in a focused ion beam (FIB) machine combined with a scanning electron microscope. Using this approach defect densities down to about 10cm-2 are accessible while a target accuracy of better than 50nm is achieved. First applications described here include metal impurity related defects in multicrystalline silicon, recombination and charge collection at NiSi2 platelets, internal gettering of copper by NiSi2 precipitates and site-determination of copper atoms in NiSi2.
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