Papers by Keyword: Ferroelectric Properties

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Authors: Cai Bing Ma, Xin Gui Tang, De Ping Xiong, Yan Ping Jiang, Qiu Xiang Liu
Abstract: In this work, (Ba0.65Sr0.35)TiO3 (BST) and Ba(Zr0.20Ti0.80)O3 (BZT) ceramic targets were prepared using the traditional solid-state reaction technique, which were sintered at 1200 °C for 2 h. The thin films of BST, BZT and sandwich structure BST/BZT/BST were grown on Pt/Ti/SiO2/Si(100) and Si(100) substrates by rf-sputtering at 500 °C, respectively. And all samples crystallied at temperatures 650 °C for 30 min in oxygen atmosphere. The cross-sectional images of the thin films were characterized by scanning electron microscope (SEM). The dielectric constant and dissipation factor tan of the BZT, BST and BST/BZT/BST thin films are 680 and 0.030, 240 and 0.021, 85 and 0.018, respectively at 100 kHz. Compared with BST and BZT films, the BST/BZT/BST film has lower dielectric constant and lower dissipation. The remanent polarization (Pr) of the sandwich structure BST/BZT/BST thin film is up to 9.57 μC/cm2, the Pr value is larger than that BST (0.25μC/cm2) film and BZT (8.45μC/cm2) film. The optical properties (refractive index n and extinction coefficient k) of the BST/BZT/BST film on Si(100) substrate were measured by n & k analyzer 2000.
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Authors: Yuya Ito, Makoto Moriya, Wataru Sakamoto, Toshinobu Yogo
Abstract: Ferroelectric 0.7BiFeO3-0.3BaTiO3 and 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films were prepared by the chemical solution deposition. Perovskite single-phase thin films with homogeneous surface morphology were successfully fabricated at 700°C on Pt/TiOx/SiO2/Si substrates. Although typical polarization (P)-electric field (E) hysteresis loops were observed for 0.7BiFeO3-0.3BaTiO3 thin films, their insulation resistance was relatively low at room temperature. Mn doping for Fe site of the 0.7BiFeO3-0.3BaTiO3 was very effective in improving leakage current properties. In 0.7BiFe0.95Mn0.05O3-0.3BaTiO3 thin films, the abrupt increase in leakage current was suppressed even at high electric fields, leading to the well-shaped P-E hysteresis loops at ambient temperatures. Remanent polarization and coercive field of the 0.7Bi (Fe0.95Mn0.05)O3-0.3Bi0.5Na0.5TiO3 films at room temperature were approximately 26 μC/cm2 and 130 kV/cm, respectively.
159
Authors: Javier Camargo, Leandro Ramajo, Fernando Rubio-Marcos, Miriam Castro
Abstract: Different processing conditions and the effect of secondary phases on ferroelectric properties of Bi0.5(Na0.8K0.2)0.5TiO3 (BNKT) are studied. Ceramic powders are prepared by solid state reaction and different sintering temperatures (temperatures between 1075 and 1150°C) are analyzed. Finally, samples are characterized by X-ray diffraction, Raman microspectroscopy, Scanning Electron Microscopy, impedance spectroscopy, and density measurements. Through XRD patterns, the perovskite structure is stabilized; together with small peaks corresponding to a secondary phase associated with K2-xNaxTi6O13 phase. Moreover, the content of the secondary phase, d33 piezoelectric constant and dielectric properties increase with sintering temperature.
3
Authors: Saransh Shrivastava, Oroosa Subohi, M.M. Malik
Abstract: The ferroelectric properties of layer-structured Strontium Bismuth Titanate (SBT) have been investigated in this study. SBT was prepared using solution combustion technique with glycine as a fuel. Single-phase formation of the layer-structured compound of SBT with orthorhombic structure was achieved after calcinations at 800 °C, and was confirmed by x-ray diffraction studies. Scanning electron micrograph shows that the grains exhibit a plate like morphology and possesses ne particle size. The as prepared sample exhibits ferroelectric properties with remnant polarization of 2Pr = 1.84 μC/cm2 at coercive field 2Ec= 2.61 kV/cm and displays low dielectric loss. Its ferroelectric transition temperature (Tc) is found to be 450 °C.
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Authors: Guo Qin Yu, Yu Ying Shao, Jun Biao Liu, Rong Ling Huo, Yan Li Li, Zhong Xia Duan
Abstract: Abstract: As it's excellent mechanical and electrical conversion characteristics, Piezoelectric material has become an important material for capturing environmental mechanical energy to get electrical energy. In this paper, (100) oriented PZT piezoelectric thick film has been prepared on Pt/Cr/SiO2/Si substrate by sol-gel used PT as transition layer. The influences of preparation process on the (100) oriented degree, ferroelectric properties, dielectric properties and piezoelectric properties of PZT piezoelectric thick film were investigated. Experiment results show that, the increasing of annealing temperature and shortening annealing time can promote PZT piezoelectric thick film growing along (100) orientation. The increasing of annealing temperature results in the decreasing of remnant polarization intensity and increasing of coercive field. Under the frequency of 1 KHz, (100) oriented PZT piezoelectric thick film with thickness of 1.5 m has the dielectric constant ˰̶̿˰́̃̅̆˼˰̈̃́˰̴̱̾˰̇̈̀˰̱̈́˰̵̷̱̱̼̹̾̾̾˰̵̹̈́̽˰̶̿˰̹̅̽̾˼˰̹́̀̽̾˰̴̱̾˰̹́̅̽̾˼˰̴̱̾˰̴̵̵̹̼̳̹̳̈́͂˰̴̹̹̱̹̓̓̀̈́̿̾˰̱̈́̾ڄ˰̹̓˰̀˾̃́£¬0.20 and 0.22, respectively. (100) orientation of PZT piezoelectric thick film can effectively improve the piezoelectric properties of PZT piezoelectric thick film, PZT piezoelectric thick film with thickness of 1.5 m and annealing time of 5min has the better (100) orientation degree, has the piezoelectric constant d33 of 102.5 pC/N. Keywords: (100) orientation; PZT generation material; ferroelectric properties; dielectric properties; piezoelectric properties
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Authors: Aleksander S. Ivashutenko, Alexandr V. Kabyshev, Nikita Martyushev, Igor G. Vidayev
Abstract: The article focuses on the investigation of the properties of alumina-zirconia ceramics possessing high mechanical characteristics and good conductivity at high temperatures. Measurement results of the dielectric dissipation factor, dielectric constant, electric conductivity when using direct and alternating current for the ceramics samples of 80%(ZrO2-3%Y2O3)-20% Al2O3 composition are presented in the paper. Measurements were conducted simultaneously in the electrostatic field in vacuum while heating the samples to the temperatures ranging from 300 to 1700K. Investigations showed that alumina-zirconia ceramics at high temperatures obtains ferroelectric properties not typical of these structures.
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Authors: Thanapong Sareein, Athipong Ngamjarurojana, Rattikorn Yimnirun
Abstract: Hybrid-doped BaTiO3 ferroelectric ceramics Ba (Ti(0.99-x)Mn0.01Tax)O3 systems have been prepared by a conventional mixed-oxide method viavibro-milling technique. The dielectric properties at room temperature were observed under magnetic field applied parallel to electric field. The results indicate significant changes of both properties with the magnetic field. Moreover, explained in terms of the induction of magnetization by means of an electric field and induction of polarization according to domain switching of the dielectric properties under the influence of the applied magnetic field.
71
Authors: Hong Cheng Liu, Wei Jun Zhang, Xiao Chen Zhang, Qian Yu, Jue Wang
Abstract: s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms of Y3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+ substitution for Bi3+ on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+ substitution for Bi3+ on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films were x:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted content x was equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Pr value was equal to 16.02μC/cm2and the coercive field Ec value was 88 kV/cm.
171
Authors: Puripat Kantha, Phathaitep Raksa, Muangjai Unruan, Tawee Tunkasiri, Panupong Jaiban, Nuttapon Pisitpipathsin
Abstract: The fabrication of lead-free (1-x)Bi0.5Na0.5TiO3 - xKNbO3 or (1-x)BNT-xKN ceramics where x = 0.00, 0.05, 0.10, and 0.15 was carried out by the modified two-step mixed oxide method. The effects of KNbO3 on structure, piezoelectric and ferroelectric properties were systematically investigated. XRD results revealed that the (1-x)BNT-xKN ceramics with low KN content of x less than 0.05 contained ferroelectric phase with a rhombohedral symmetry while the ceramics with x = 0.05 possessed pseudocubic structure. The higher KN content (x ≥ 0.10) ceramics had symmetries rhombohedral structure. At room temperature, the highest Pr and low Ec were obtained when the composition of x = 0.05. Moreover, the results showed the moderate KN addition could enhance the piezoelectric response. The d33 of 0.95BNT-0.05KN reached as high as 125 pC/N.
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Authors: Hua Wang, Xia Yan Zhao, Ji Wen Xu, Ling Yang
Abstract: 0.998[(0.95(K0.5Na0.5)NbO3-0.05LiSbO3]-0.002BiFe1-xCoxO3 (KNN-LS-BF1-xCx, x=0-0.8) piezoelectric ceramics were prepared by solid-state reaction method. The influences of Co content on piezoelectric and ferroelectric properties were investigated. The results reveal that the substitution of Co significantly affects the piezoelectric and ferroelectric properties of KNN-LS-BF1-xCx ceramics. All samples with various Co contents show a pure perovskite structure. With increasing x from 0 to 0.8, the depolarization temperature Td of KNN-LS-BF1-xCx ceramics increase with increasing x, and the piezoelectric constant d33 of KNN-LS-BF1-xCx specimen with x=0.2 is larger than those of other KNN-LS-BF1-xCx specimens in the investigated range when the temperature is lower than Td. The remnant polarization Pr decrease with x in the investigated range, but the coercive field Ec increase to 1.78kV/mm with x up to 0.6, and then decrease with further increase of Co contents x.
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