Papers by Keyword: Field Emission

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Authors: Feng Ge Wang, Ting Tai Wang, Yu Kui Li
Abstract: With carbon nanotube as cold cathode, the field emission display based on the improved film-electrode was fabricated. The indium tin oxide film covered on the glass surface was etched to form the film-electrode. For one film-electrode stripe, the left bar electrode and the right bar electrode were formed on the both side of the bottom electrode. The carbon nanotube would be prepared on the bottom electrode surface. The cathode covering layer fabricated with the sintered insulation slurry would cover the left and right bar electrodes. It was confirmed that the emission current could be controlled by the formed electric-field with the improved film-electrode.
Authors: Chih Chieh Chang, Yi Jui Pan, Woo Hu Tsai
Abstract: A novel reflective metal anode with different groove structures and a set of parallel long narrow stripe Carbon nanotube (CNT) cathodes to fabricate a 7 inches field emission backlight unit (CNT-FEBLU) has been carried out in this paper. In comparison with a simple diode structure, which has the same stripe cathode unit with screen printing phosphor layer on ITO glass surface as the anode, the reflective metal anode has some advantages such as sustaining high field emission current, no unexpected arcing, and high illumination and uniformity without phosphor degradation. The results show that a reflective metal anode not only conducts the residual charges and heat from the phosphor surface effectively, but also reflects the light to one side of the panel through the cathode end and exhibits high illumination without obvious obstacle by the narrow stripe cathodes. The luminance of the reflective metal groove anode we proposed is 11530 cd/m2, with the emission current density of 1.52 mA/cm2 under the electric field about 1.07 V/μm.
Authors: D.H. Kim, T.S. Kim, B.K. Ahn, H.Y. Shin, Dong-Gu Lee, H.K. Cho, Young Rae Cho
Abstract: Carbon nanotubes have attracted considerable attention because their high aspect ratio leads to a large electric field enhancement and a low operating voltage. The dependence of environmental gases such as Ar, O2 on the emission current from carbon nanotube emitters was examined in this study. Based on our experiments, the current density is decreased in single-wall carbon nanotubes (SWNTs), but is increased in multi-wall carbon nanotubes (MWNTs) as the vacuum level decreases from 10-7 Torr to 10-4 Torr by the inflow purging gases. The current density subsequently recovered as the vacuum level increased to 10-7 Torr when gas inflow stopped. From those results, we conclude that the MWNTs have completely different degradation characteristics in comparison to SWNTs. The increased current density of an MWNT in the high-pressure range of 10-4 Torr is a significant finding and would be widely applicable to low cost vacuum packages.
Authors: Nan Nan Li, Shu Cai Pang, Fei Yan, Da Zhi Jin, Wei Xiang, De Zhang, Jin Yi Dai, Bao Qing Zeng
Abstract: Effective field emitting angle plays an important role when investigating field emission characters. In this work, effective field emitting angle is introduced for Spindt-type emitter to relate spatial variation of current density along tip’s surface to emission current. The effects of various parameters on effective field emitting angle are analyzed. The results show that effective field emitting angle decreases exponentially as half angle increases, decreases quadratically as radius of gate aperture increases, but increases logarithmically as gate voltage increases linearly. It is also found that effective field emitting angle increases first and then decreases with emitter’s height increasing. Similar trends can be also found with insulator height. Grid thickness nearly has no effect on the effective field emitting angle.
Authors: Zeng Lei Liu, Nian Dong Jiao, Zhi Dong Wang, Zai Li Dong, Lian Qing Liu
Abstract: This paper introduces atomic force microscope (AFM) deposition method to fabricate nanostructures and nanodevices. Field emission theory is introduced in this paper, which provides theoretical explanation for AFM deposition. Dot matrixes are fabricated by AFM deposition on three different substrates, Si, Au and GaAs. Differences of deposition on the three substrates are discussed. AFM deposition has many practical applications. For example, AFM deposition can be used to solder nano components together to improve electrical properties of nanodevices. Besides nanosoldering, AFM deposition can also be used in fabrication of nanodevices. Thus AFM deposition is a valuable research field for future massive applications of nanodevices.
Authors: Li An Ma, Jin Yang Lin, Li Qin Hu, Yun Ye, Tai Liang Guo
Abstract: A high yield of ultralong SnO2 nanowires is successfully achieved by a simple thermal evaporation of SnO powders under air ambient. The as-synthesized SnO2 nanobelts are single crystals with rutile structure. A backgated triode device for high-current applications has been developed with beltlike SnO2 field emitters. The devices have confirmed triode operation with low turn-on gate voltage (about 170 V) and stable electron emission with brightness of 30 cd/m2.
Authors: Yu Kui Li, Yun Peng Liu
Abstract: With the effective screen-printing technique and high-temperature sintering process, the suspersion gate structure was developed. The silver slurry was printed on the gate substrate to form the gate electrode. Using carbon nanotube as cold field emitter, the triode field emission display (FED) panel was fabricated, and the detailed manufacture process was also presented. The anode back plane, the cathode back plane and spacer combined to device room, in which the suspension gate structure would be included. The distance between the gate electrode and carbon nanotube cathode could be reduced, which could decrease the device manufacture cost because of the small gate voltage. The modulation of emitted electron by the gate voltage would be confirmed, and the field emission characteristics was measured. The sealed FED panel with simple fabrication process and designed structure possessed better field emission uniformity, high display brightness and field emission perofrmance.
Authors: Hsin Luen Tsai
Abstract: Silicon nanowires with fine tip curvature and high aspect ratio are the promising alternative as the electron emitter to promote field electron emission characteristics. The fabrication of silicon nanowires based on the vapor-liquid-solid (VLS) mechanism was performed in the low pressure chemical vapor deposition chamber in the present work. The gold has its lower eutectic point than other materials and deposited on silicon wafer as the catalyst for silicon nanowire synthesis. The structural properties of the nanowires, including number density, size, aspect ratio and tapering geometry, were optimized by various experimental recipes. The results showed that the low turn-on filed of the nanowire was comparable with the published materials. The 1.2 V/μm low turn-on field was detected from the silicon nanowires which have high aspect ratio and tapered tip emitter when the silicon nanowires were synthesized under the reaction conditions at 620 °C grown for 60 minutes with silane and nitrogen flow rates at 100 SCCM.
Authors: Qi Zhang, Jun Jie Qi, Yue Zhang, Qin Liang Liao, Xin Li
Abstract: With recent research, the author intends to outline the framework of the field emission of ZnO nanostructures. However, many groups’ reports ignored the thermionic emission process in the low electric field. A recently published field emission cathode parameter extraction method [X. He et al., J. Appl. Phys. 102, 056107(2007)] provided unambiguous and reliable cathode. The method utilized Richardson-Laue-Dushman law in low electric field and Fowler-Norheim equation in high electric field to solve a one-dimensional model including both thermionic and field emission. The model gave a much better agreement with the experimental data of ZnO cathode under the applied field and acquired a revised surface field enhancement factors and work function of ZnO cathode in the electron emission process.
Authors: Rupert Schreiner, Christoph Langer, Christian Prommesberger, Florian Dams
Abstract: We report on miniaturized silicon field emitter arrays for the application in compact and energy-saving vacuum-microelectronic devices, e.g. sensors or x-ray tubes. Since standard silicon semiconductor technology has been used for the fabrication, they may be easily integrated with other silicon based circuits and devices on the same chip. The silicon tip geometry and the operating conditions were optimized in order to obtain highly uniform and stable electron field emission from large area cathode arrays. A series of uniform hexagonal tip arrays containing each 547 tips were fabricated and characterized. The electron emission properties of both individual tips as well as of complete emitter arrays were investigated. A saturation level in the voltage-current characteristics was found, which can be explained by the limitation of the supply of electrons due to the p-type silicon wafer material. When operating the arrays in the current saturation regime at an emission current of ~ 1 nA per tip, a highly stable and low noise emission can be observed.
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