Papers by Keyword: GaAs

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Authors: Qi Wang, Yang Li, Si Dan Du
Abstract: RTD (resonant tunneling diode) is a nonlinear device in nm scale level and operates at ps time level which is promising to be used into integrated circuits in the coming years. J.N.Schulmans physical model has beenproven to be suitable to emulate the device accurately. In this paper, a novelRTD based on new material structure is proposed which could reach a relative high PVCR (peak-valley-current-ratio). Then NFP (Nonlinear Fitting based on Physical model) method which is suitable to calculate the parameters for Schulmans physical model more quickly is proposed. At the end of paper the SPICE model of the proposed RTD is proven that it could emulate the RTD device, and shows its application ability in high frequency oscillation circuit.
Authors: Takahisa Ohno, Taizo Sasaki
Authors: Takahisa Ohno, Taizo Sasaki, Akihito Taguchi
Authors: D. Jishiashvili, R. Dzhanelidze, Z. Shiolashvili, I. Nakhutsrishvili
Authors: A. Kazlauskas, B. Ullrich, K. Misawa, Takayuki Kobayashi
Authors: Patrick P. Camus, Joshua Shapiro, Sergey V. Prikhodko
Abstract: GaAs nanopillars show promise for energy applications. Understanding, characterizing and modifying the structure of the pillars will be very important for optimizing the properties of the assemblies. EBSD was used to investigate the orientations of these nanometer structures.
Authors: B. Kaufmann, D. Haase, Achim Dörnen, C. Hiller, Klaus Pressel
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