Papers by Keyword: Gate Turn-Off Thyristor

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Authors: Q. Jon Zhang, Anant K. Agarwal, Craig Capell, L. Cheng, Michael J. O'Loughlin, Albert A. Burk, John W. Palmour, Sergey L. Rumyantsev, T. Saxena, Michael E. Levinshtein, A. Ogunniyi, Heather O'Brien, Charles Scozzie
Abstract: In this paper, for the first time, we report 12 kV, 1 cm2 SiC GTOs demonstrated with a novel negative bevel termination, which improves the breakdown voltage by >3.5 kV compared to the conventional multiple-zone Junction Termination Extension (JTE). The significant improvement in the blocking voltage was attributed to the elimination of the electrical field crowding in the periphery of the mesa with conventional JTE termination. This new termination has been used in both electrically and optically triggered SiC GTOs. An ultrafast turn-on speed of 70 ns has been measured on 12 kV, 1 cm2 SiC light triggered GTOs.
Authors: Lin Cheng, Anant K. Agarwal, Craig Capell, Michael J. O'Loughlin, Khiem Lam, Jon Zhang, Jim Richmond, Al Burk, John W. Palmour, Aderinto Ogunniyi, Heather O’Brien, Charles Scozzie
Abstract: In this paper, we report our recently developed 1 cm2, 15 kV SiC p-GTO with an extremely low differential on-resistance (RON,diff) of 4.08 mΩ•cm2 at a high injection-current density (JAK) of 600 ~ 710 A/cm2. The 15 kV SiC p-GTO was built on a 120 μm, 2×1014/cm3 doped p-type SiC drift layer with a device active area of 0.521 cm2. Forward conduction of the 15 kV SiC p-GTO was characterized at 20°C and 200°C. Over this temperature range, the RON,diff at JAK of 600 ~ 710 A/cm2 decreased from 4.08 mΩ•cm2 at 20°C to 3.45 mΩ•cm2 at JAK of 600 ~ 680 A/cm2 at 200°C. The gate to cathode blocking voltage (VGK) was measured using a customized high-voltage test set-up. The leakage current at a VGK of 15 kV were measured 0.25 µA and 0.41 µA at 20°C and 200°C respectively.
Authors: Pankaj B. Shah, Bruce Geil, Kenneth A. Jones, T.E. Griffin, Michael A. Derenge
Authors: Leonid Fursin, Frank Hoffmann, John Hostetler, Xue Qing Li, Matthew Fox, Petre Alexandrov, Mari Anne Gagliardi, Mark Holveck
Abstract: A growing demand for smart and flexible photovoltaic power conversion and pulsed-power systems is leading to rapid development and commercialization of medium voltage 6.5 - 24 kV, wide-bang gap rectifiers and switches. Conventional silicon bipolar switches are limited to roughly 8 kV breakdown voltages and scaling up the voltage rating requires very thick wafers presenting significant manufacturing challenges. Very thick drift layers of silicon devices also translate into a very high minority carrier charge injected during forward conduction for an efficient conductivity modulation, hence leading to an extremely slow switching speed and poor efficiency. In this paper USCi presents the development of 6.5 kV 4H-SiC gate-turn-off thyristors (GTOs) with multiple floating guard-ring edge termination, and describes their application in an AC-link grid-tied solar inverter system.
Authors: Aderinto Ogunniyi, James Schrock, Miguel Hinojosa, Heather O’Brien, Aivars J. Lelis, Stephen Bayne, Sei Hyung Ryu
Abstract: The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the kilo-amp regime. The turn-on transition speed is determine by the spreading velocity, which depends on applied gate current, applied anode current density, minority carrier lifetime, and both the gate base-width and the drift region of the thyristor. The impact of device parameters on switching performance is discussed in this work.
Authors: Anant K. Agarwal, Pavel A. Ivanov, Michael E. Levinshtein, John W. Palmour, Sergey L. Rumyantsev, Sei Hyung Ryu, Michael S. Shur
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