Papers by Keyword: Gettering

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Authors: C. Savigni, Maurizio Acciarri, Simona Binetti
Authors: Andrzej Misiuk, Alexander G. Ulyashin, Adam Barcz, Peter Formanek
Abstract: Accumulation of hydrogen in Czochralski silicon implanted with N2+ (Si:N; N dose, DN=1–1.8x1018 cm-2; energy E=140 keV) or O2+ (Si:O; DO=1x1017 cm-2; E=200 keV), processed at up to 1400 K (HT) under enhanced Ar pressure, up to 1.2 GPa (HP), and followed by treatment in hydrogen (deuterium) plasma, was investigated by Secondary Ion Mass Spectroscopy. Implantation produces buried amorphous layer. As determined by transmission electron microscopy, subsequent HT-HP processing results in a formation of a specific sample microstructure. In plasma treated as-implanted Si:N, hydrogen accumulates at a depth of about 50 nm, up to concentration 2x1021 cm-3. This concentration is twice lower at a depth ≈ 80–250 nm. Deuterium content remains almost unchanged after plasma treatment of Si:N prepared by processing at 1270 K while it is strongly dependent on DN and on HP. In plasma treated Si:O, prepared by processing at 920-1230 K, hydrogen profile corresponds to that of implanted oxygen and decreases with HP. Comparative analysis of hydrogen accumulation and its subsequent release at 720-920 K in the Si:N and Si:O structures indicates that the capacity of buried layers in Si:O to getter and to preserve hydrogen is higher than that in Si:N.
Authors: V.G. Litovchenko, Andrey V. Sarikov, A.A. Evtukh
Abstract: In this paper, the influence of the gettering treatment on the distribution of diffusion length of minority charge carriers in multicrystalline silicon has been investigated. For the calculation of the parameters of diffusion length distribution, a new method has been proposed based on the mathematical treatment of experimentally measured integrated spectra of surface photovoltage measured by capacitor method (capacitor photovoltage). Obtained results show not only the increase of the average diffusion length as a result of used gettering procedure, but also the decrease of inhomogeneity of its distribution.
Authors: Sergei V. Koveshnikov, David Beauchaine, Zbigniew J. Radzimski, Li Ling, K.V. Ravi
Authors: S.M. Myers, D.M. Follstaedt, D.M. Bishop
Authors: N.V. Frantskevich, A.V. Frantskevich, A.K. Fedotov, A.V. Mazanik
Abstract: Standard p-type 12 cm Cz Si wafers were implanted by helium ions. The implanted and nonimplanted samples were subsequently subjected to nitrogen plasma treatment and final vacuum annealing. SEM studies have shown the absence of large-scale defects on the top wafer surface and the presence of a layer revealing contrast with surrounding silicon on the cleavage surface at a depth corresponding to the projected range Rp. Scanning over a crater formed by ion sputtering has exposed no defects to the depth of Rp and beyond. At the same time, at a depth of Rp there is a layer with the morphology (structure) significantly different from the surrounding defect-free areas. The measurements of transverse conductivity have shown that the wafer with the formed nitrogen-contained layer possesses dielectric properties with a breakdown voltage up to 15 V.
Authors: Michio Tajima, Y. Kumagaya, Toshitake Nakata, M. Inoue, A. Nakamura
Authors: Scott A. McHugo, T. Heiser, H. Hieslmair, C. Flink, Eicke R. Weber, S.M. Myers, G.A. Petersen
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