Papers by Keyword: Glass Substrate

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Authors: M.F. Achoi, Mohd Nor Asiah, Mohamad Rusop, Saifollah Abdullah
Abstract: Atomic Force Microscope (AFM) has been used to study the surface properties of TiO2 nanocoated glass surface at atomic level. TiO2 nanocoated glass surface was prepared by synthesis of titanium butoxide (TTiB) as precursor and was then deposited on glass surface via spin-coating technique. The AFM details studied of TiO2 nanocoated glass surface revealed that the nanoparticle was uniformly distributed throughout glass surface with growth of TiO2 nanostructures below 12 nm via AFM surface morphology and topography characterization, respectively. It was also showed that the cross-sectional view analysis is 5.22 nm and surface roughness, Ra, of coating is 0.858 nm, respectively. The TiO2 nanostructures were successfully seen grew at 0.2 M of sol-gel solution. It confirmed that for the coating application at nanometer scale level on the glass-based material equipment.
Authors: Dong Nyung Lee
Abstract: Amorphous Si films are generally deposited on glass by physical or chemical vapor deposition. When annealed, they undergo crystallization through nucleation and grain growth. At low annealing temperatures, crystallization starts near the glass substrates for pure Si films and near metals for metal-induced crystallization. In this case, crystallites grow along the <111> directions of c-Si nearly parallel to the film plane, that is, the directed crystallization. The directed crystallization is likely to develop the <110> or <111> orientation, which means the <110> or <111> directions are along the film thickness direction. As the annealing temperature increases, equiaxed crystallization tends to increase, which in turn increases random orientation. When the annealing temperature is further increased, the <111> orientation may be obtained.
Authors: Yuji Yakushiji, Yuichiro Kuroki, Tomoichiro Okamoto, Masasuke Takata
Abstract: A glass substrate was sputter-etched by R. F. magnetron sputtering at the powers of 100 or 200 W for 60 min in Ar gas. Pd thin film as a sensing agent of hydrogen (H2) was deposited on the glass substrate. The durability of the sensor was evaluated during hydrogen absorption-desorption cycles. The Pd thin film on the glass substrate without sputter etching peeled off after dozens of the cycles. However, the Pd thin film on sputter-etched glass substrate didn’t peel off. The contact angle of water on the glass substrate with sputter etching was smaller than that without sputter etching, suggesting that the surface energy of the substrate was increased by employing the sputter etching process. The improvement of durability for the optical hydrogen sensor using sputter etched substrate was related to the increase of surface energy induced by the sputter etching.
Authors: Fu Wen Qin, Ai Min Wu, Feng Chun Liu, Bao Dan Liu, Xin Jiang
Abstract: Nitridation of Corning 7101 glass substrate and the following GaN deposition were carried out in a self-developed electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition (ECR-PEMOCVD) system equipped with in-situ reflection high-energy electron diffraction (RHEED) monitoring. RHEED pattern and X-Ray diffraction (XRD) spectrum showed that the nitridation can effectively improve the C-axis orientation of as-prepared GaN film. Atomic force microscope (AFM) analysis indicated that the average grain size increased significantly with 5 min of nitriding, but degraded as nitriding time increased. The optimum nitriding time was achieved as 5 min. The effect of nitridation on the GaN film deposition and its formation mechanism were discussed.
Authors: Pei Tao Guo, Zhi Lin Xia, Yi Yu Xue, Li Xin Zhao, Rui Wu
Abstract: Aluminum films were deposited on glass substrate by electron beam heat evaporation, and porous alumina films with high transmittance were prepared by means of anodic oxidation under different anodizing conditions in oxalic acid solution or phosphoric acid solution respectively. Thus the morphology of these porous alumina films was characterized by different structural. he optical transmittance spectrum at normal incidence over the 300~1000nm spectra region were obtained by spectrophotometer, which shows, in visible and ultraviolet light region, the transmittance of porous alumina films prepared in oxalic acid solution is much better than that prepared in phosphoric acid solution. The SEM analysis results showed that the pores are circular and uniform in porous alumina prepared in oxalic acid but irregular and non-uniform in that prepared in phosphoric acid, which affected the surface roughness of alumina films.
Authors: Jia Zhi Yang, Zhong Yang Liu, Dong Wei Xu, Tian Jie Liu
Abstract: An electrical conducting copper coating on the glass substrate is deposited by means of wire exploding spray coating (WESC). The coating system basically consists of a high voltage pulsed power supply and a coating chamber. A pulsed voltage is produced by the power supply upon the metal wire in the coating chamber. The whole process is under taken at atmosphere pressure and room temperature. The coating is more uniform when a higher discharging voltage is applied, which means more energy is deposited into the copper wire in the identical time, so the wire will be destructed more efficiently. A 20 kV discharging voltage is applied in this paper for the balance of coating quality and harmless to the glass substrate. The coating samples are analyzed by a series of tests. The SEM photograph shows that the copper particles penetrate deeply into the glass substrate, which results in a strong adhesion of the coating, and the thickness of the coating is about 400 to 500 μm after sprayed three times. The electrical conductivity of the copper coating is about 1.837*104 1-1·m-1 tested by a Kelvin electric bridge, and the 50 Hz withstand voltage of the glass tube before and after the spray coating is about 40 kV and 38 kV, respectively, with no obvious decrease.
Authors: S.C. Chen, T.Y. Kuo, Y.C. Lin, Po Cheng Kuo
Abstract: The experimental result shows that the preferred orientations of NiO thin films are closely related to the working pressure of argon. All of NiO(111), NiO(200), and NiO(220) diffraction peaks are observed in the XRD patterns and exhibited random orientation of NiO film when the film is deposited in low Ar pressure of 5 mTorr. As the Ar pressure is increased to 20 mTorr, only NiO(200) peak appears and shows (200)-textured NiO films. However, the lattice parameter of NiO film deposited in high Ar pressure of 20 mTorr is 0.424 nm, which is much larger than that of NiO bulk (0.417 nm). The lattice parameter can be decreased by post-annealing the film due to the interstitial Ar atoms are released from the NiO lattice and it reduces continuously from 0.423 to 0.417 nm as the NiO films are annealed from 300 to 600 °C. Therefore, post-annealing the NiO film deposited in higher Ar pressure will reduce the lattice misfit between the NiO and L10 FePt film that is beneficial to improve the perpendicular magnetic anisotropy of FePt film.
Authors: Li Na Li, Jing Hua Gu, Yue Zhang
Abstract: MOCVD was applied to deposit TiO2 thin films on glass substrates. Effects of the deposition conditions (source temperature and substrate temperature) were studied. The phase and micro- structure of the TiO2 thin films were examined by X-ray diffraction and electron microscopy, respectively. The results indicate that substrate temperature affects both the morphology and the phase of the TiO2 film, while source temperature only affects the surface morphology of TiO2 film. Highly oriented anatase film on glass substrate was obtained at a source temperature of 140 oC and a substrate temperature of 350 oC. XRD pattern shows that only the (200) peak of anatase appears under the conditions. The crystallines in the highly oriented anatase were rectangular in top view.
Authors: N. Akhiruddin, Rosnita Muhammad, Yussof Wahab, Zuhairi Ibrahim
Abstract: The growth of zinc oxide nanowires is further investigated by thermal evaporation method and is discussed with respect to vapour-solid (V-S) growth mechanism. In this paper, ZnO nanowires were synthesized on glass substrate without the use of any catalyst with a constant flow of argon gas 1.36 psig and oxygen gas of 0.34 psig. Zinc powder of 99.99% purity is placed in a horizontal furnace and exposed to temperature of 600°C for 90 minutes. The surface morphology of the deposited zinc oxide is investigated by the atomic force microscopy (AFM) images and it was found that the deposited ZnO has a rough surface while field-emission scanning electron microscopy (FESEM) confirms the morphology of the ZnO nanowires. Photoluminescence (PL) spectra indicate that the optical quality of the deposited structure is potentially excellent with high energy excitonic emission close to the band edge which is assigned to the surface exciton in ZnO at 3.4eV.
Authors: Ying Ge Li, Dong Xing Du
Abstract: Thin film Amorphous Silicon materials have found wide application in photovoltaic industry. In this paper, thin layers (around 300nm) of intrinsic hydrogenated amorphous silicon (a-Si:H) are fabricated on glass (Corning Eagle2000TM) substrates by employing plasma enhanced chemical vapor deposition (PECVD) system with gas sources of silane and hydrogen. The deposited thin films are proven to be material of amorphous silicon by Raman spectroscopy measurement and their electronic transport properties are thoroughly characterized in terms of photoconductivity, dark conductivity and photo response. The effect of Hydrogen dilution on electrical properties are investigated for a-Si:H thin films deposited in the temperatures range of 150~200°C. Results indicate that a-Si:H thin films on glass substrate owns device-quality electrical properties and could be applied on fabricating thin film solar cells as the absorber layer material and on other photovoltaic or photo electronic devices.
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