Papers by Keyword: Hall Coefficient

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Authors: Takeshi Ohgaki, Tomokazu Nakata, Naoki Ohashi, Satoshi Wada, Takaaki Tsurumi
Authors: G.V. Lashkarev, M.V. Radchenko, V.V. Asotskiy, A.V. Brodovoy, A.I. Mirets, O.I. Tananaeva
Authors: Shinya Hikita, Teppei Hayashi, Yuuki Sato, Shinzo Yoshikado
Abstract: Thin films of a composite of molybdenum disilicide (MoSi2) and silicon (Si) were fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi2 and Si with a Si-to-Mo molar ratio of 1:X (2.0 X 2.5). The Hall coefficients were measured to identify the conduction mechanisms in the thin films. The sign and magnitude of the Hall coefficients revealed that thin films with X = 2.02.2 having a hexagonal crystal structure showed p-type conduction, while the mechanism for the n-type film with X = 2.33 was unknown and that for a composite of hexagonal and an unknown structure with X = 2.3, 2.4 and 2.5 showed mixed conduction.
Authors: R.A. Andrievski
Abstract: Nanostructured films are considered as a characteristic (distinctive) type of consolidated nanostructured materials (NMs). Their benefits as compared to other types of NMs are described in detail. Some new interesting results related to mechanical and physical properties of nanostructured films based on high-melting point compounds (nitrides, borides and carbides), metals, and oxides are discussed. Data on film hardness, type of deformation, effect of additional magnetic field at deposition of films, properties of twins, conductivity, coercivity, and the Hall coefficient are reported and commented.
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