Papers by Keyword: Heterostructures

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Authors: R.M. Ramović, R. Šašić, R. Andrin
Authors: Alexander Gradoboev, Ksenia Orlova, Anastasiya V. Simonova
Abstract: The most common technological solution for increasing the light efficiency of the LEDs based upon AlGaInP heterostructures are discussed in the paper. The creation of LEDs with the inclusion of quantum wells and quantum dots in the active region, removing the original base and placing the LED on a new substrate, the replacement of the absorbent substrate by the reflective, using light-reflective surfaces such as Bragg reflectors or a mirror base (substrate), the list of new based materials for the LEDs based upon AlGaInP heterostructures as same as sapphire, glass, gallium phosphide, silicon and silicon carbide are presented. Therefore, new advanced methods of emission power are emerging.
Authors: Nicolo’ Piluso, Massimo Camarda, Ruggero Anzalone, Andrea Severino, Silvia Scalese, Francesco La Via
Abstract: Micro Raman characterization has been used to determine the stress status of 3C-SiC epilayer grown on pseudomorphic-Si thin layer on Si1-xGex/Si(001). The strain conditions of the Si1-xGex films grown on Si(001) have been determined by the analysis of additional Silicon Raman peaks, which Raman shifts are related to the lattice parameter. Through the analysis of the Raman spectra, the correlation between the Si1-xGex film, the crystal quality and the stress relaxation of the 3C-SiC as a function of the Germanium fraction (x), have been evaluated. The increase of Germanium fraction determines the reduction of the voids density located at the 3C-SiC/Si interface and the relaxation of the stress within the epilayer. Moreover, the 3C-SiC crystal quality, monitored by the Full Width at Half Maximum of the TO Raman mode, remains unchanged for any Germanium fraction values.
Authors: L. Hsu, W. Walukiewicz, Eugene E. Haller
Authors: Jonathan P. Goss, Patrick R. Briddon, Nicolas G. Wright, Alton B. Horsfall
Abstract: The nature of the interaction between the substrate and the graphene is critical in terms of impact upon the graphene electron dispersion relation, and in terms of charge transfer. We present here the results of density functional simulations of 4H-SiC–graphene heterostructures using large, periodic simulation supercells. We show that covalent bonding between the substrate and graphene leads both to changes in the electronic structure, and extensive charge transfer, but that the larger simulation system yields qualitatively different electronic structure to that from the more usual p3 × p3R30◦ cell.
Authors: M.A. Vidal, M.E. Constantino, B. Salazar-Hernández, H. Navarro-Contreras, M. López-López, I. Hernández-Calderón, Hiroo Yonezu
Authors: A.V. Gradoboev, V.V. Sednev
Abstract: It is known that the rate of introduction of radiation defects into the Schottky barrier of GaAs and InP diodes depends on the presence of the electric field. The main aim of this research is to study the influence of the built-in electric field at the p-n junction on the resistance of dual AlGaAs heterostructure IR-LEDs under gamma rays irradiation. It is determined that the rate of defects introduction in the presence of built-in electric field or reverse bias at p-n junction is considerably less than the rate of defects introduction into the neutral region without electric field. Then the possible ways of improving the radiation resistance of infrared LEDs are considered.
Authors: L.A. Kosyachenko, I.K. Vereshchagin, S.M. Kokin
Authors: L.M.R. Scolfaro, J.R. Leite, C.A.C. Mendonça, D. Beliaev, S.M. Shibli, E.C.F. da Silva, E.A. Meneses
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