Papers by Keyword: HF

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Authors: Steven Verhaverbeke
Authors: Kenichi Sano, Masayuki Wada, Frederik E. Leys, Roger Loo, Andriy Hikavyy, Paul W. Mertens, James Snow, Akira Izumi, Katsuhiko Miya, Atsuro Eitoku
Abstract: Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [ , ]. As a main part of stressor technique, embedded SiGe-S/D technology is reported to improve the pMOSFET drive current [ , ].
Authors: Kenichi Sano, Frederik E. Leys, G. Dilliway, Roger Loo, Paul W. Mertens, James Snow, Akira Izumi, Atsuro Eitoku
Authors: Z.W. He, Xing Qin Liu, D.Y. Xu, Qiang Su, D.F. Guo, Y.Y. Wang
Abstract: The characteristic of nanoporous SiO2 thin film prepared by sol-gel method with catalyst HF was studied by scanning electron microscopy, Fourier transform infrared, HP analyzer series and ellipsometry. Results showed the incorporation of HF effectively adjusted the pore size and distribution, and lowered the leakage current density and dielectric constant. This might be related to the weak acidity of HF, which properly controlled the velocity of chemical reaction in solution, and to the introduction of strong Si-F bonds, which had the lower electronegative and the larger volume.
Authors: Philippe Garnier, Marc Neyens
Abstract: Still nowadays in integrated circuits manufacturing, few materials patterns are defined by a wet etch on patterned deep UV photoresist. From dies to dies generation, an optical performance improvement is required, hence an evolution with thinner and thinner positive resist. This makes these latter more sensitive to wet chemical etchant through the polymer, reducing their protection of the underneath material. Following characterizations enable a clear understanding of BHF (Buffered HF) benefits versus diluted HF during a gate oxide definition.
Authors: Paola González-Aguirre, Hervé Fontaine, Carlos Beitia, Jim Ohlsen, Jorgen Lundgren
Abstract: Semiconductor manufacturing technologies have developed to the point where molecules, such as water, oxygen and airborne molecular contaminants (AMCs), have become detrimental in specific process conditions. Front Opening Unified Pods (FOUPs) are designed as controlled microenvironments (MEs) that protect processed wafers from AMCs during storage and transport. However, it has been demonstrated that FOUPs are able to accumulate by sorption molecules outgassed by processed wafers. Such contaminants are then able to be subsequently released and transferred to other sensitive wafers leading to detrimental impact [1,2]. This cross-contamination scheme from FOUP to wafer was evidenced especially for volatile acids such as HF or HCl and is responsible of yield losses due to drastic corrosion issues or crystal growth on Cu, Al or TiN materials [1,3,4]. These cross contamination issues can be reduced or controlled using low sorption and outgassing polymer materials as previously reported [4,5]. Another AMC control measure is to purge the FOUP with a dry gas. This provides several advantages, for example, wafers are not easily oxidized thus preventing oxide layers, deposition of hydrocarbons and metal defects [6] However, there is no measured information about the purge impact has on AMC control inside a FOUP. The purpose of this paper is to show and quantify what effect two different FOUP polymers using nitrogen and clean dry air (CDA) purge have on the HF volatile acid control through the Cu-wafers storage.
Authors: Jae Hyun Bae, Jae Mok Jung, Kwon Taek Lim
Abstract: In this work, we studied HF/scCO2 dry etching processes with various co-solvents for the purpose of reducing the residues. The effect of co-solvent on etch rate and selectivity was also investigated.
Authors: Hervé Fontaine, Marc Veillerot, Adrien Danel
Authors: Salima Abu Jeriban, Ivette Guiot, Luc Bacherius, Joris Proost, Erik Sleeckx, Rita Vos, Paul W. Mertens
Authors: Z.X. Shi, Shi Zhong Liu, M. Han, J.R. Li
Abstract: The specimens of single crystal superalloy DD6 with 0.10% Hf and 0.47% Hf were prepared in the directionally solidified furnace. The effect of Hf content on the isothermal oxidation resistance of the second generation single crystal superalloy DD6 was studied at 1000°Cin ambient atmosphere. Morphology of oxides was examined by SEM, and their composition was analyzed by XRD and EDS. The experimental results show that the oxidation resistance of DD6 alloy with 0.47% Hf is better than that of the alloy with 0.10% Hf. The alloy with different Hf content all obeys parabolic rate law during oxidation for 100h at 1000°C. The increase of Hf content can promote the Al2O3 formation and decreases the proportion of NiO. The oxide grain size and the thickness of the oxide layer all reduce with increasing of Hf content. The oxide scale of the alloy with different Hf content is made up of an outer NiO layer with a small amount of Co3O4, inner Al2O3 and Cr2O3 layer with a small amount of TaO2.
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