Papers by Keyword: HF

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Authors: Y.B. Kim, Jeong Ho Kim, Yong Mann Lee, Gil Gwang Lee, Jung Yup Kim, Ja Chun Ku, Jae Ok Ryu
239
Authors: Felicia Goh, Christopher Lim, Vincent Sih, Zainab Ismail, Simon Y.M. Chooi
Abstract: Arsenic based defects were found on the surfaces of advanced CMOS patterned wafers after the pre-silicidation HF clean. Investigations into the mechanism of formation were done using representative As-implanted bare silicon, polysilicon and HDP silicon oxide films. The nature and composition of these As-based defects are believed to be arsenic and arsenic oxide. Methods of defect removal include the application of hydrogen peroxide containing solutions and hydrogen plasma dry cleaning.
87
Authors: Enrico Bellandi, Mauro Alessandri, Francesco Pipia, A. Tonti
35
Authors: Mauro Alessandri, Enrico Bellandi, Francesco Pipia, F. Cazzaniga, K. Wolke, M. Schenkl
27
Authors: Jung Yup Kim, Jim McVittie, Krishna Saraswat, Yoshio Nishi
33
Authors: Wim Fyen, I. Teerlinck, Sebastien Lagrange, S.H. Brongersma, A. Steegen, Paul W. Mertens, Marc M. Heyns
275
Authors: F. Tardif, T. Lardin, I. Constant, M. Fayolle, Pieter Boelen, C. Cowache, Ismail Kashkoush, R. Novak
169
Authors: Ying Sun, Lan Ying Ge
Abstract: Aluminophosphate molecular sieve and Ni(II)-containing APO-5 materials were synthesized hydrothermally and characterized by various analytical and spectroscopic techniques. It indicates that the nickel ions with a divalent oxidation state can incorporate into the tetrahedral coordination in mesoporous aluminophosphate very well. The better crystallizing temperature is explored. A stronger crystalline form is obtained with the addition of HF. Further, microporous aluminophosphate molecular sieves and Ni(II) ions remain in a tetrahedral geometry even after calcination at 550 °C.
617
Authors: Martin Lommel, Philipp Hönicke, Michael Kolbe, Matthias Müller, Falk Reinhardt, Pit Möbus, Eric Mankel, Burkhard Beckhoff, Bernd O. Kolbesen
Abstract: The formation of self-assembled monolayers (SAMs) by specific organic molecules with appropriate anchor groups on semiconductor surfaces may be used to probe the chemical state and quality of the surface or to achieve surface passivation. Molecules with thiol anchor groups are able to bond to hydrogen-terminated germanium surfaces (Ge-S bond). We have prepared SAMs of alkylthiols with different head groups on germanium. Since the surface preparation of germanium is neither well understood nor developed, the controlled preparation of an oxide-free completely H-terminated surface which is a prerequisite for SAM formation of alkylthiols turned out to be a major challenge. Several approaches have been studied. The characterization of the germanium surface prior to and after SAMs formation has been performed by AFM, XPS, Synchrotron-TXRF and -NEXAFS.
169
Authors: Alessio Beverina, I. Guilmeau, J.P. Carrere, N. Emonet, F. Guyader, V. Huard, Sébastien Petitdidier, R. Velard
235
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