Papers by Keyword: I-V Characteristics

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Authors: Xue Song Zhou, Xue Bo Shen, You Jie Ma
Abstract: Existing model of solar cells is not suitable for partial shading condition, which makes output current-voltage (I-V) curve of photovoltaic (PV) array staid-stepping. Furthermore, Power-Voltage (P-V) characteristics may exist more than two local peak value in partially shading which bring interferences to maximum power point tracking (MPPT). Based on modified engineering model of solar cells, an accurate model of array was proposed considering variation of shadows. And the I-V characteristic, P-V characteristic and yield of PV modules were analyzed. At last, the optimum output power with different shadows arrangement was discussed.
Authors: Jie Yang, Ye Ting Jia, Ning Ye, Zhen Yu Yuan, Hong Yuan Shen, Jia Di
Abstract: The lack of the high temperature I-V model greatly restricts the application of GaN HEMT devices. In this paper, the characteristic variation of GaN HEMT device under high temperature condition is investigated, and an improved I-V characteristics model of GaN HEMT transistors over a wide temperature range from 25°C to 300°C is proposed based on the classic Statz model. The experimental results indicate that the improved spice model, by taking the self-heating effect into account, is more accurate compared to the original Statz model. The proposed I-V model should be an available tool for the simulation of GaN HEMT device in designing integrated circuits at high temperature.
Authors: Bo Yuan, Shi Bin Chen, Xiao Jia
Abstract: In this paper, semiconductor simulation software ISE TCAD 10.0 was used to simulate W/SiC SBD forward voltage characteristics and reverse voltage characteristics at different temperatures on the basis of theoretical analysis, and the valuable results were achieved. Under the temperature range from 73 K to 773 K, the simulation results of W/SiC Schottky barrier diode forward voltage characteristics showed that forward characteristics were significant influenced by the temperature. At room temperature (303K), if bias voltage was low, the current will be exponential growing with voltage, and the turn-on voltage of W/SiC Schottky barrier diode was about 0.2V. If bias voltage was high, the current increased will be high, and the series resistance effect will become obvious. Under lower bias (2V), a different temperature from 73K to 573K had small impact on reverse current-voltage characteristics. The results showed that the device had the good rectifier characteristics, small reverse current, high breakdown voltage, and the device can steadily and long-term work in high temperature and other complex environment.
Authors: Budsara Nararug, Itsara Srithanachai, Surada Ueamanapong, Sanya Khunkhao, Supakorn Janprapha, Thanawat Thongnak, Narin Atiwongsangthong, Surasak Niemcharoen
Abstract: This paper analyzes the effect of X-ray irradiation on the electrical properties of Pt-doped p-n diode. X-ray energy irradiated on Pt-doped P-N diode with 70 keV with time 205 sec. After irradiations, the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics and carrier degeneration lifetime (τg) were investigated. The results show that the leakage current is slightly increased after the diodes were exposed X-ray and affect higher degeneration carrier lifetime. The effects after X-ray irradiation indicated that the defects of the diode have been changed.
Authors: Shigeru Tanaka, Yuichi Sawai, Akio Chiba, Ken Takahashi, Yukio Saito
Authors: Shan Yu Quan, Ming Tian, Lin Mei Yang
Abstract: ZnO thin films have been deposited onto the glass substrates by the sol-gel spin coating method at different chuck rotation rates. The effect of deposition parameters on the structural, optical and electrical properties of the ZnO thin films was investigated. The crystal structure and orientation of the ZnO thin films were investigated by X-ray diffraction (XRD) patterns. The optical absorbance and transmittance measurements were recorded by using a double beam spectrophotometer. The optical absorption studies reveal that the transition is direct band gap energy. The I-V plots of the ZnO thin films were carried out in dark and under UV-illumination. The result shows the obtained ZnO thin films can be used as a photovoltaic material.
Authors: A.I. Romanenko, K.M. Limaev, D.N. Dybtsev, V.P. Fedin, S.B. Aliev, O.B. Anikeeva, E.N. Tkachev
Abstract: We investigated current-voltage (I-V) characteristics of bulk polyaniline and aniline polymerized inside nanopores of chromium terephthalate dielectric matrix MIL-101. The temperature dependence of electrical conductivity σ (T) of these materials are described by the fluctuation-induced tunneling model (FIT), which means that the main contribution to a net conductivity is caused by contacts between particles of the polyaniline. The comparison of I-V for these two types of materials shown that I-V characteristics of bulk polyaniline are described by the quasi-1D VRH model while for aniline polymerized inside nanopores of chromium terephthalate dielectric matrix MIL-101 by extended FIT model.
Authors: Nathaporn Promros, Suguru Funasaki, Ryūhei Iwasaki, Tsuyoshi Yoshitake
Abstract: n-Type nanocrystalline FeSi2/intrinsic Si/p-type Si heterojunctions were successfully fabricated by FTDCS and their forward current-voltage characteristics at low temperatures were analyzed on the basis of thermionic emission theory. The analysis of J-V characteristics exhibits an increase in the ideality factor and a decrease in the barrier height at low temperatures. The values of ideality factor were estimated to be 2.26 at 300 K and 9.29 at 77 K. The temperature dependent ideality factor together with the constant value of parameter A indicated that a trap assisted multi-step tunneling process is the dominant carrier transport mechanism in this heterojunction. At high voltages, the current transport mechanism is dominated by SCLC process.
Authors: F.S. Husairi, Kevin Alvin Eswar, Azlinda Ab Aziz, Mohamad Rusop, Saifollah Abdullah
Abstract: In this work, ZnO nanostructures were prepared using the catalytic immersion method (90 °C) with zinc nitrate hexahydrate (Zn (NO3)26H2O) as a precursor, urea (CH4N2O) as a stabiliser and porous silicon nanostructures (PSi) as a substrate. PSi prepared on p-type Si by using electrochemical etching method. Different molarity concentration ratios of Zn (NO3)26H2O to CH4N2O (2:1, 1:2, 1:4 and 1:6) were used in this work. The effects of the urea concentration during the synthesis process were discussed. The ZnO nanostructures were characterised using field emission scanning electron microscope (FESEM), photoluminescence (PL) and I-V probe. Porous nanoflakes were successfully synthesised on a p-type PSi substrate that was prepared by electrochemical etching. High-intensity photoluminescence (PL) at the optimum concentration indicated that urea is a good stabiliser to produce ZnO nanostructures with good crystallinity. The high resistance of ZnO/PSi show that electrical properties of PSi dominant compare to ZnO nanostructures.
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