Papers by Keyword: Implantation Damage

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Authors: Robert E. Stahlbush, Nadeemullah A. Mahadik, Q. Jon Zhang, Albert A. Burk, Brett A. Hull, Jonathan Young
Abstract: Basal plane dislocations (BPDs) introduced into SiC epitaxial layers, 25 μm thick, by the combination of implantation and activation anneal are directly observed by ultraviolet photoluminescence (UVPL) imaging. BPD loops appear to originate at micron-sized or smaller areas at the surface. These loops expand by gliding along the basal plane in the offcut direction until the loops approach the substrate. The loops can glide perpendicular to the offcut direction by many millimeters.
Authors: Isabella Mica, Maria Luisa Polignano, G.P. Carnevale, Aldo Armigliato, R. Balboni, M. Brambilla, F. Cazzaniga, Giuseppe Pavia, V. Soncini
Authors: Hans Jürgen von Bardeleben, J.L. Cantin
Authors: Julien Pernot, Jean Marie Bluet, Jean Camassel, Lea Di Cioccio
Authors: Jean Camassel, Patrice Vicente, L. Falkovski
Authors: Hiroshi Sugimoto, Shin Ichi Kinouchi, Yoichiro Tarui, Masayuki Imaizumi, Kenichi Ohtsuka, Tetsuya Takami, Tatsuo Ozeki
Authors: Servane Blanqué, R. Pérez, Marcin Zielinski, Julien Pernot, Narcis Mestres, Jordi Pascual, Phillippe Godignon, Jean Camassel
Authors: Jean Camassel, Hervé Peyre, D.J. Brink, Marcin Zielinski, Servane Blanqué, Narcis Mestres, Phillippe Godignon
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