Papers by Keyword: InAs

Paper TitlePage

Authors: Doris Forkel-Wirth, N. Achtziger, A. Burchard, J.C. Correia, Manfred Deicher, Joachim Grillenberger, H. Gottschalck, T. Licht, R. Magerle, U. Reislöhner, M. Rüb, M. Toulemonde, W. Witthuhn
Authors: A. Burchard, J.G. Correia, Manfred Deicher, Doris Forkel-Wirth, R. Magerle, A. Prospero, A. Stötzler, the ISOLDE Collaboration
Authors: Anna A. Spirina, Igor Neizvestny, Nataliya L. Shwartz
Abstract: The process of GaAs and InAs substrates high-temperature annealing under the Langmuir evaporation conditions is studied by Monte Carlo simulation. The temperature range of gallium arsenide and indium arsenide congruent and incongruent evaporation are determined. It was demonstrated that the congruent evaporation temperature Tc is sensitive to the vicinal surface terrace width. The decrease of the terrace width results in a decrease in the congruent evaporation temperature. The Ga and In diffusion lengths along the (111)A and (111)B surfaces at congruent temperatures are estimated. The surface morphology transformation kinetic during high-temperature annealing is analyzed.
Authors: Yan Ping Yao, Bao Xue Bo
Abstract: Amorphous InAs films are deposited on substrates of quartz glass by RF magnetron sputtering technique in different gas ambient. We present a systematic study of the affects of the sputtering parameters on the chemical composition. Amorphous InAs (a-InAs) films have been achieved at higher working pressure when the substrate temperature and RF power are increased respectively. The films composition is controlled by transport phenomena of sputtered atoms from the target to the substrate and by substrate surface dynamics. We study how to improve the sputtering parameters in order to obtain stoichiometric a-InAs films.
Authors: E. Lohmann, Th. Schaefer, M. Wehner, R. Vianden
Authors: Robert Schulz, T. Fehlhaber, E. Glaser, F. Schrempel
Authors: Sung Ho Hwang, Jung Il Lee, Jin Dong Song, Won Jun Choi, Il Ki Han, Soo Kyung Chang
Abstract: We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.
Authors: Guang Yan Liu, Wen Cai Wang
Abstract: The growth details of strained GaAsSb layers on GaAs(001) substrates were studied by reflection high energy electron diffraction (RHEED) beam intensity oscillations as a function of both substrate temperature and Sb/As flux ratio. Both the RHEED intensity and RHEED oscillation cycles are reduced with decreasing substrate temperature and Sb/As flux ratio. InAs QDs with high dot density, small dot size and narrow size distribution have been achieved on strained GaAs / GaAsSb buffer layer. The average lateral size of dots shows a trend toward to smaller size and dots’ density shows a trend toward to higher density as the surface Sb composition increasing. The QDs with higher density and smaller size distributions at high Sb composition, indicates that the Sb plays an important role in the dot formation under this growth condition. The lattice mismatch of InAs layer with the GaAsSb buffer layer is reduced with increasing of Sb composition in the GaAsSb interlayer. This result indicates that the density, size and size distribution of self-assembled quantum dots (QDs) can be controlled through the manipulation of the Sb-mediated strain field in the lattice mismatched system.
Showing 1 to 10 of 18 Paper Titles