Papers by Keyword: Interface Structure

Paper TitlePage

Authors: Sokrates T. Pantelides, G. Duscher, M. Di Ventra, Ryszard Buczko, K. McDonald, M.B. Huang, Robert A. Weller, Israel J.R. Baumvol, Fernanda Chiarello Stedile, C. Radtke, S.J. Pennycook, G.Y. Chung, Chin Che Tin, John R. Williams, J.H. Won, Leonard C. Feldman
Authors: Yan Li, Xin Yang Wang, Shi Zhong Wei, Xiang Dong Ma, Liu Jie Xu
Abstract: Al2O3 ceramics and carbon steels were brazed using Cu-Ti active filler metal. The weld interface was characterized using scanning electron microscopy, energy spectrometer and X-ray diffraction instrument. Effects of brazing temperature on interface microstructures and the shear strength of the joint were investigated. The results show that the optimum brazing process is brazing temperature of 1323K, holding 30 min. The brazed joints with good microstructure morphology and higher interface shear strength can be obtained under the optimum brazing process. Interface bonding zone consists of three layers: reaction layer close to the ceramic, brazing alloy layer and diffusion layer close to the steel. And Cu3Ti3O, TiFe and TiFe2 are confirmed to form in the interface bonding zone. The shear strength of the joint reaches 99MPa.
Authors: Nishtha Srivastava, Guo Wei He, R.M. Feenstra
Abstract: The formation of epitaxial graphene on SiC(000-1) in a disilane environment is studied. The higher graphitization temperature required, compared to formation in vacuum, results in more homogeneous thin films of graphene. Some areas of the surface display unique electron reflectivity curves not seen in vacuum-prepared samples. Using selected area diffraction, these areas are found to have a graphene/SiC interface structure with a graphene-like buffer layer [analogous to what occurs on SiC(0001) surfaces].
Authors: J. Echigoya, Takanobu Miyashita, K. Hisamune
Authors: G. Dehm, C. Scheu, R. Raj, M. Rühle
Authors: Łukas Ciupiński, D. Siemiaszko, Marcin Rosiński, Andrzej Michalski, Krzysztof Jan Kurzydlowski
Abstract: A Pulse Plasma Sintering (PPS) process was employed to manufacture Cu-diamond composites with a 50% volume fraction of each constituent. Pure and Cr (0.8wt.%) alloyed copper matrices were used and commercial diamond powders. The composites were sintered at temperature of 900°C for 20 min and under pressure of 60 MPa. In these sintering conditions diamond becomes thermodynamically unstable. Cu0.8Cr-diamond and Cu-diamond composites with relative densities of 99,7% and 96% respectively were obtained. The thermal conductivity of Cu0.8Cr-diamond composite is equal to 640 W(mK)-1 whereas that of Cu-diamond is 200 W(mK)-1. The high thermal conductivity and relative density of Cu0.8Cr-diamond composite is due to the formation of a thin chromium carbide layer at the Cu-diamond interface.
Authors: Toshiyuki Isshiki, Koji Nishio, Yoshihisa Abe, Jun Komiyama, Shunichi Suzuki, Hideo Nakanishi
Abstract: Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211) and (001). Cross-sectional HRTEM analyses of the interfaces between SiC buffer layer and AlN epitaxial layer disclosed characteristic nanostructures related growth mechanism on the each substrate. In the case of Si(110) and Si(211) substrate, hexagonal AlN grew directly on SiC(111) plane with AlN(0001) plane parallel to it. In contrast, growth on Si(001) substrate gave complicate structure at AlN/SiC interface. Hexagonal AlN didn’t grow directly but cubic AlN appeared with a pyramidal shape on SiC(001). When the cubic AlN grew 10nm in height, structure of growing AlN crystal changed to hexagonal type on the pyramidal {111} planes of cubic AlN.
Showing 1 to 10 of 33 Paper Titles