Papers by Keyword: Ion Beam Sputtering

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Authors: Peter P. Murmu, John Kennedy, Ben J. Ruck, Andreas Markwitz
Abstract: We report the structural and electrical properties of ion beam sputtered ZnO films vacuum annealed at varying temperatures. XRD results revealed that the films grow along the c-axis. The crystallite sizes increase from ~8 to ~30 nm upon annealing at 800 ºC. Annealing aided to recover the compressive strain and regain the standard lattice parameter values. The RMS surface roughness increased to ~5.0 nm after annealing at 800 ºC as observed in AFM micrographs. Increased resistivity on the annealed films suggested that the oxygen vacancies are compensated by de-trapped oxygen at grain boundaries.
Authors: Atsushi Mitsuo, Tatsuhiko Aizawa
Authors: Chao Song, Rui Huang, Xiang Wang, Jie Song, Yan Qing Guo
Abstract: The nc-Ge/a-Si multilayer structures were fabricated by ion beam sputtering technique on silicon substrates at temperature of 400 °C. Raman scattering spectroscopy, atomic force microscopy (AFM) and room temperature photoluminescence were used to characterize the structure and optical property of the samples. It was found that the nc-Ge/a-Si multilayer sample can be obtained when the Ge sublayer is 3 nm. The room temperature photoluminescence was observed and the luminescent peak is located at 685 nm. Compared with the a-Ge/a-Si film, the intensity of PL of the nc-Ge/a-Si multilayer film becomes stronger due to the higher volume fraction of crystallized component.
Authors: E. Chen, Kun Peng, Wu Lin Yang, Jia Jun Zhu, De Yi Li, Ling Ping Zhou
Abstract: Pure Ni coating and multi-layered Ni-P coatings were deposited on sintered NdFeB magnets by ion beam sputtering and electroless plating to improve the corrosion resistance of magnets, respectively. The structure and preferred growth orientation, surface morphology, the adhesive strength between coatings and magnets, and corrosion properties of samples were investigated by XRD, SEM, high-low temperature shock test and potentiodynamic polarization curves, respectively. It was found that electroless Ni-P coatings are amorphous with nodules distributed, Ni coating deposited by ion beam sputtering is crystalline and spherical Ni grains are densely packed. Ni coating deposited by ion beam sputtering can provide better protection for sintered NdFeB than that of electroless Ni-P coating.
Authors: Sharidah Azuar Abdul Azis, John Kennedy, Peng Cao
Abstract: In this study, hydroxyapatite (HA) coatings on Ti6Al4V substrate were deposited using an ion beam sputtering technique. Owing to its medical applications, the crystalline phases present in the HA must be controlled. This study investigated the effect of post-deposition heat treatment at different temperatures and evaluated the microstructure of the HA coatings and their behaviours in simulated body fluid (SBF). The post-deposition treatment of the as-deposited samples was carried out in an air-circulated furnace at a temperature between 300 0C and 600 0C. The XRD patterns reveal that the minimum temperature to transform the HA coating from amorphous to crystalline phase is 400 0C. A higher temperature at 600 0C leads to a growth of the crystalline HA phases. Fourier transform infrared spectroscopy (FTIR) measurements show the existence of hydroxyl and PO-bonds in all coatings and the amounts varied with temperature. Atomic Force Microscopy (AFM) study suggests that the nanostructured crystalline HA starts to grow at 400 0C and becomes more obvious at a higher temperature of 600 0C. The simulated body fluid (SBF) test reveals that better apatite formation with post deposition heat treatment at 600 0C would potentially enhance the formation of new bone (osseointegration).
Authors: Xi Zhou, Chong Wang, Jie Yang, Ying Xia Jin, Yu Yang
Abstract: A series of double-layer Ge/Si quantum dots are prepared by ion beam sputtering deposition (IBSD) on Si (100) substrates. The influences of deposition temperature and thickness of Si spacer-layer on the microstructure of double-layer Ge/Si quantum dots were characterized by using Atomic force microscopy (AFM) and Raman spectra technique. The results indicate that the density of the second layer islands firstly increases and then decreases with increasing the growth temperature of Si spacer-layers. In addition, increasing the thickness of Si spacer-layer, the islands merger phenomenon disappears. When the deposition thickness is larger than 40 nm, the islands on the upper-layer show the same features with the buried islands. The mechanism of three-factor-interactions of nanoislands is proposed to explain these phenomena, and our results can be used as a guidance to obtain optimum IBSD growth process for Ge/Si quantum-dot superlattices.
Authors: Fumiya Yamaga, Mikinori Nagano, Nobuyuki Zettsu, Dai Yamazaki, Ryuji Maruyama, Kazuhiko Soyama, Kazuya Yamamura
Abstract: Numerically controlled local wet etching (NC-LWE) is a novel technique to fabricate the ultraprecision optical components and/or finishing the functional materials. In this technique, a figuring is performed by controlling the dwelling time of the combination nozzle, which consists of a supply and a suction part of an etchant, on the workpiece. In this paper, we proposed fabrication process of millimeter-thick elliptical neutron focusing mirror substrate by applying NC-LWE figuring involving CeO2 slurry polishing. We fabricated a millimeter-thick elliptical neutron focusing mirror substrate with a figure error of less than 0.2 μm and obtained a surface roughness of less than 0.15 nm rms.
Authors: Guang Xing Liang, Ping Fan, Peng Ju Cao, Zhuang Hao Zheng
Abstract: Cu-doped CdS thin film has been successfully deposited by ion-beam sputtering deposition. The structural, morphology, optical and electrical properties of as-deposited and annealed Cu-doped CdS thin films were investigated. The heavily Cu-doped CdS films annealed at 400 °C was demonstrated to be improved in structural, morphology, electrical and optical properties. X-ray diffraction (XRD) analysis indicated the formation of polycrystalline CdS film with the structure of hexagonal wurtzite phase. No distinct impurity of Cu and Cu-S phase was detected in Cu-doped CdS thin films. Atomic force microscopy (AFM) revealed that the grain size was increased after annealed. Optical transmission and absorption spectroscopy measurement revealed a high absorption and energy band gap was of about 2.40 eV. The CdS thin film was of p-type conductivity and the resistivity was found to be 1.28×10-1Ωcm.
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