Papers by Keyword: ITO

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Authors: P.S. Pa
Abstract: The low yield rate in display panel production that results from imperfect Indium Tin Oxide layer deposition is well known. In this experiment a 6th Generation TFT-LCD is used to investigate an ultra-precise method for the removal of Indium Tin Oxide (ITO) thin film microstructure from defective display panels. The complete removal of the ITO layer makes it possible to put these panels back into the production line for reuse with a considerable reduction of both waste and production cost. This process, which involves the removal of ITO layer substructure by means of an electro-chemical etching process, is of major interest to the optoelectronics semiconductor industry. The ITO film can be removed completely by a proper combination of feed rate and electric power. In this electro machining process a high current flow and high feed rate of the display (color filter) achieves complete and efficient removal of the ITO layer. A large diameter cathode virtual rotation circle also corresponds to a higher removal rate. A small cathode end radius effectively improves dregs discharge and is an advantage when associated with a high workpiece feed rate. This precision reuse process for the recycling of defective display screen color filters is presented as an effective tool for use in the screen manufacturing process. The defective Indium Tin Oxide thin-film can be removed easily and cleanly in a short time.
1144
Authors: Long Long Chen, Xi Feng Li, Ji Feng Shi, Chang Zhou, Jian Hua Zhang
Abstract: ITO transparent film was deposited on glass substrates by RF-magnetron sputtering equipment as electrode, routing material and the photolithography process was studied. The results shown that the ITO based transparent electrode routing needs larger dose energy than that Mo based substrate when the PR processes were all identical. The photo resist cannot be exposed thoroughly where the length/width ratio of gap between routing serried lines lager than 80 as the typical Mo based exposure process. The width of gap reached to 8.7um which was the limit of exposure machine of transparent film after the 2000um-length, 4um-width gap was exposed thoroughly. It should be attention of the routing gap design for electrical characters in transparent flat panel display.
95
Authors: Zaliman Sauli, Vithyacharan Retnasamy, Ong Tee Say, Chai Jee Keng
Abstract: Indium Tin Oxide (ITO) is a transparent conducting material. The particular electrical and optical properties of the ITO make it becomes an important material that being applied in optoelectronic filed. In this paper, investigation on various parameters in time of deposition and ITO layer on specimen was done. The AFM (Atomic Force Microscope) was used to investigate grain size on specimen. It shows more layer deposition of ITO, it will increase grain size on the specimen. In addition, grain size on specimen was increased after annealing process compared test specimen before annealing process. Besides that, semiconductor parametric analyser was used to examine resistance on ITO films. The higher value of resistance is showed on test specimen after heat treatment compared to test specimen before heat treatment.
562
Authors: Naveen Kumar Katam, Charan Singh, Madhu Rawat, R.S. Anand
Abstract: For an OLED, its electrodes and organic film stack determine its performance. In this paper, we study the effect of acidic (Sulfuric acid) and basic (Sodium Hydroxide) ITO surface treatments. Resistance variation, roughness variation and etc. are recorded. Their effect on device performance is studied by fabricating OLED of m-MTDATA/NPB/Alq3/BCP/LiF/Al structure. The difference in device characteristics with different overlaying Hole Injection Layer (HIL) is studied by comparing fabricated devices
387
Authors: Yang Qiu, De Yi Meng, Yu Feng Chen, Chen Kui Zu
Abstract: Tin doped indium oxide (ITO) thin films were prepared on IR glass substrates at different oxygen flow rate by ion-assisted electron beam evaporation method, high purity ITO particles (In2O3: SnO2 = 9:1 Wt%) were used as source material. Properties such as microstructure, morphology and mechanical properties were investigated by X-ray diffractometer, SEM and scratch tester, respectively. Meanwhile, lattice constant a, crystal grain size and residual stress situation of films as-deposited were calculated and discussed in detail. The results indicated that all of the films as-deposited were polycrystalline and represented [111] preferential orientation. With the increasing of the oxygen flow rate, grain size and surface roughness of films as-deposited decreased, and inner stress remained in film increased. There were two types of failure mode occurred in ITO films according to different stress situation. Relative high level of residual stress improved the mechanical properties of ITO films in a certain extent.
1004
Authors: Bhumin Yosvichit, Mati Horprathum, Pitak Eiamchai, Viyapol Patthanasetakul, Benjarong Samransuksamer, Pongpan Chindaudom, Somyod Denchitcharoen
Abstract: Transparent conductive oxides (TCOs) with indium tin oxide (ITO) thin films were deposited without substrate heating and post-deposition anneal using ion-beam assisted evaporation technique on glass and silicon substrates. The oxygen ion with emitting current produced using End-Hall ion source for bombardment of growing surface to improve ITO films structure. In this study, we investigate the effect of an ion flux to ITO films in terms of structural, optical and electrical properties. The emitting current can be varied from 0.5 to 2.0 A with the oxygen flow rate 7 sccm. The total film thickness and deposition rate are 200 nm and 0.2 nm/s, respectively. The structural properties of thin films were characterized by X-ray diffraction (XRD) to discover the preferred orientation with phase of crystalline and scanning electron microscopy (SEM) to examine the surface morphology in cross-section view. To determine the transmission spectra of the films, UV-visible spectrometer is introduced. Moreover, the films were also measured to investigate resistivity, carrier concentration, mobility and sheet resistance by Hall-effect measurements and four-point probe. It has been found that the ITO films with lowest electrical resistivity for the emitting current of 1 A about 5.57x10-4 Ω.cm and slightly increases with increase of the emitting current. The mobility and carrier concentration rapidly decreases with increase the emitting current from 1.0 A to 2.0 A.
263
Authors: D.I. Kim, Y.Z. Yoo, H.G. Chun
Abstract: Transparent conducting indium tin oxide (ITO) thin films were deposited on glass substrates by magnetron sputter type negative metal ion source (MSNIS) using ITO target and then the effect of post deposition annealing temperature on the optoelectrical property of ITO film has been investigated. The resistivity and optical transmittance of ITO films that prepared at 70°C (without intentional substrate heating) with optimized deposition condition reached at 6.2×10-4  cm and 80%, respectively. As increasing post deposition annealing temperature, a rapid decrease is observed in the resistivity. The lowest resistivity of 1.7×10-4  cm and the highest optical transmittance of 83% were obtained at the post annealing temperature of 300°C. From the XRD and SEM measurements, the increment of the optical transmittance and conductivity by post deposition annealing treatment is attributed to the enhanced crystallinity of the ITO film.
287
Authors: Raluca Savu, Ednan Joanni
Abstract: Nanocrystalline indium tin oxide (ITO) thin films were deposited on Si/SiO2 substrates by laser ablation from a ceramic target with a composition of 0.9 In2O3 . 0.1 SnO2. Samples were prepared in the pressure range from 10-1 to 5mbar, either in-situ at 500°C or at room temperature and heat-treated in air at 500°C. X-ray diffraction results show that the films are not oriented, except the ones made at high temperature which exhibit strong (400) orientation. AFM pictures show that the grains are round shaped and the sizes are in the range between 50 and 200nm, except for films made in-situ at 10-1mbar which are elongated and faceted. For higher pressures the grains tend to be small and to form agglomerates. The porosity of the films increases with the deposition pressure and the thicknesses reach a maximum of 2.8µm at 1mbar for the films made at room temperature and of 1.2µm at 2mbar for the ones made in-situ; for higher pressures the growth rate drop drastically, as revealed from SEM observations of cross-sections. The electrical resistance increases with the deposition pressure due to the increase in porosity, changing from 3.3k to 38.9M for films deposited at room temperature and from 20 to 265k for the ones made in-situ.
1161
Authors: Yu Ming Peng, Yan Kuin Su, Cheng Jye Chu, Ru Yuan Yang, Ruei Ming Huang
Abstract: In this paper, the indium tin oxide (ITO) thin films were prepared by a sol-gel spin coating method and then annealed under different temperatures (400, 500 and 550°C) in a mixture atmosphere of 3.75% H2 with 96.25% N2 gases. The microstructure, optical and electrical properties of the prepared films were investigated and discussed. The XRD patterns of the ITO thin films indicated the main peak of the (222) plane and showed a high degree of crystallinity with an increase of the annealing temperature. In addition, due to the pores existing in the prepared films, the optical and electrical properties of the prepared films are degraded through the sol-gel process. Thus, the best transmittance of 70.0 %in the visible wavelength region and the lowest resistivity of about 1.1×10-2 Ω-cm were obtained when the prepared film was annealed at 550°C.
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