Papers by Keyword: LaNiO3

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Authors: Jing Wang, Chuan Wei Zang, Liang Ying Zhang, Xi Yao
Abstract: Conductive LaNiO3(LNO) thin films are grown on Si(100) substrates by a sol-gel method and their application as the bottom electrode for the growth of sol-gel derived Pb(Zr,Ti)O3(PZT) thin films are studied. Morphology and electrical properties of the multilayer films are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), electrical measurements. Experiment results show LNO thin films get highly (110)-oriented perovskite-type structure. Smooth and dense surfaces are observed on LNO thin films. The dielectric properties of PZT films show that PZT/LNO films exhibit worse dielectric properties than those of the PZT/Pt thin films. And LNO thin films prepared by sol-gel methods are not suitable as bottom electrode to deposit PZT thin films. On the other hand, FTIR spectrum and pyroelectric results of LNO thin films reveal that LNO can be used as absorber layer of PT thin films infrared detector with multi-layer thin film thermal insulation structure. At 10Hz, the detectivity (D*) and the voltage response (Rv) of PT thin films are 1.11×107cm·Hz1/2/W, 1.46×103V/W respectively.
Authors: Yuki Mizutani, Hiroshi Uchida, Hiroshi Funakubo, Seiichiro Koda
Abstract: Thin films of a bismuth layer-structured dielectric oxides (BLSD), SrBi4Ti4O15, with preferential crystal orientation were prepared by means of chemical solution deposition (CSD) technique on (111)Pt/(100)Si substrate with bottom nucleation layers of conductive perovskite oxides, LaNiO3 and SrRuO3. CSD technique was utilized for the film preparation of SrBi4Ti4O15. These films possessed highly crystal orientation of (00l) BLSD planes parallel to the substrate surface. The leakage current densities of the SrBi4Ti4O15 films on (100)SrRuO3//(100)LaNiO3/(111)Pt/Ti/(100)Si and on (100)LaNiO3/(111)Pt/Ti/(100)Si were approximately 10-6 and 10-7 A/cm2 respectively. The dielectric constants of these films in a frequency range of 102 - 106 Hz were from 310 to 350 and 250 to 260 respectively. The value of capacitance change of these films in the range from 20 to 300 oC was about +8 and +5% respectively.
Authors: Yuan Yuan Zhang, Xiao Dong Tang, Gen Shui Wang, Xian Lin Dong
Abstract: Highly (100)-oriented LaNiO3 (LNO) thin films were prepared on p-type Si (100) substrates by metal organic solution deposition (MOSD). The LNO thin films were driven by series precursor solutions with different ratio of acetic acid to deionized water (Raaw) and pH values. The dependences of viscosity, pH value and the thermal property of the gel-derived powders of the precursor solution on Raaw values were systematically investigated. AFM images showed that Raaw can dramatically influence the surface roughness. When Raaw changed from 7:1 to 1:1, the surface roughness decreased from 3.695 nm to 1.488 nm. The resistivities of all the films are less than 2.1×10-3Ω·cm. It shows that the precursor solution has strong effect on the microstructure of the thin films and relatively slight effect on the resistivity.
Authors: Cezarina C. Mardare, Andréi I. Mardare, Raluca Savu
Abstract: Three types of bottom electrodes were deposited by RF magnetron sputtering on SiO2/Si substrates: LaNiO3 (LNO), Pt/Ti and LNO/Pt/Ti. The effect of different deposition and processing conditions for the LNO films on the ferroelectric properties of sputtered Pb(Zr0.52Ti0.48)O3 (PZT) capacitors was investigated. The LNO films were either deposited at room temperature and heattreated in O2 flow in the furnace at 500 or 600°C or made in situ in the range of 200-500°C. Other deposition parameters under study were the pressure, the RF power and the Ar:O2 ratio. The resistivity of the LNO films was measured and on some of the films with the lower values, amorphous PZT was deposited and then crystallized in the furnace. X-ray diffraction results show that the PZT films deposited over Pt/Ti had a preferential (100) orientation, while those deposited over LNO made in situ are strongly (100) oriented and the ones deposited over amorphous LNO do not exhibit any preferential orientation. The remanent polarization of the capacitors was around 28μC/cm2 when amorphous LNO or Pt/Ti electrodes were used and around 20μC/cm2 with LNO made in situ. Leakage currents were improved when LNO electrodes made in situ was used; a good ferroelectric fatigue performance of the capacitors when subjected to 1010 switching cycles was also observed
Authors: Mari Hayashi, Shintaro Yasui, Hiroshi Funakubo, Hiroshi Uchida
Abstract: Bi-based perovskite-type oxide materials such as BiFeO3 (BFO) and Bi (Zn1/2Ti1/2)O3 and the related compounds receive much attention and have been developed actively as important candidates for Pb-free ferroelectric materials instead of toxic Pb-based perovskite oxide materials. Recently, many researches have been reported for thin films of Bi-based materials by various film-deposition techniques for actual application of semiconductive devices, microactuators, etc. In this study, we tried preferential crystal growth of BFZT films on semiconductive silicon substrates using uniaxial-(100)-oriented LaNiO3 (LNO) buffer layer. BFO films were fabricated via chemical solution deposition (CSD) technique on platinized silicon wafer [(111)Pt/TiO2/(100)S and (100)LNO-coated platinized silicon [(100)LNO/(111)Pt/TiO2/(100)S substrates. XRD analysis indicated that the films fabricated on (111)Pt/TiO2/(100)Si substrate consisted of randomly-oriented BFZT crystal with lower crystallinity. On the other hand, the films on (100)LNO/(111)Pt/TiO2/(100)Si consisted of uniaxial-one-oriented BFZT crystal with higher crystallinity. The crystallization temperature these films were 500°C, respectively. These results suggest that the BFZT crystal was grown successfully on uniaxial oriented (100)LNO plane which also had perovskite-type crystal structure. Consequently, one-oriented BFZT films were prepared on Si substrate successfully using (100)LNO buffer layer.
Authors: B. Vengalis, V. Lisauskas, K. Šliužienė, V. Petrauskas, S. van Dijken, M. Bari, M. Venkatesan, J.M.D. Coey
Authors: Sheng Guo Lu, Haydn Chen
Abstract: LaNiO3 (LNO) has been used as bottom electrode layer for ferroelectric and antiferroelectric thin films due to its good conduction, preferred (100) orientation, same crystalline structure as many perovskite ferroelectrics and antiferroelectrics, good adhesion and compatibility with the Pt/Ti/SiO2/Si template. In this study we have investigated the ideal optimal post - annealing conditions for LaNiO3 thin films deposited at 450°C using a magnetron sputtering method. Heat treatment from 500 to 1200°C was performed. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and electrical measurements were carried out to characterize the morphology, structure, and macroscopic properties. Results indicated that the LNO film had the best quality when annealed at about 800°C. Above this temperature, the morphology, structure and associated properties would deteriorate.
Authors: Xuan Ding, Qing Ming Chen, Ji Ma, Mya Theingi, Ying Juan Li, Hui Zhang
Abstract: LaNiO3 single layer, LaNiO3/LaAlO3 superlattice on vicinal-cut single crystalline LaAlO3 (100) and LSAT (100) substrates were prepared by pulsed laser deposition technique. Single-phased LaNiO3 polycrystal target, which is synthesized by sol-gel method, is employed in the thin film deposition process. The structure and physical properties of both the targets and thin films are analyzed. X-ray diffraction results show LaNiO3 single layer is of c-orientation and textural growth, therefore LaNiO3/LaAlO3 forms not superlattice but multilayer. The ultra-violet LITV (laser induced thermoelectric voltage) effects of the LaNiO3/LaAlO3 mutilayer and LaNiO3 single layer were investigated. A comparison study of the influence of LaNiO3 targets prepared by different sol-gel method on the physical property, and LITV effect of thin films was performed as well.
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