Papers by Keyword: Ledge

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Authors: G.A. Zhuravlev, Y.E. Drobotov
Abstract: The review of researches of stress concentration in elastic bodies with loaded ledges, which are carried out with separate analysis of each of the force factors, is provided. The known results of using of such an approach are shown for example, the effects of geometrical concentrators curvature are revealed, and on their base principally new nonpole gear systems are developed. The recommendations for significant refinement of the known method are given.
Authors: S. Hagège, Yannick Champion
Authors: B.A. MacDonald
Authors: Zhi Gang Yang, Zhao Dong Li, Zhi Yuan Liu, Zhen Qing Liu, Zhi Xin Xia, Chi Zhang
Abstract: A mixed control mode is developed to model the ledge growth of pro-eutectoid ferrite, considering coupled effects of migration of austenite/ferrite interface and carbon diffusion in austenite. Carbon concentration of austenite at the austenite/ferrite interface increases from the bulk carbon concentration to a steady level, which is lower than that in local equilibrium, during the ferrite growth process. Correspondingly, ferrite grows rapidly at the beginning since all the driving force of ferrite transformation is dissipated on the interface migration. In the later stage of isothermal transformation, the growth rate of ferrite decreases towards a steady level since a part of driving force is dissipated on carbon diffusion in austenite. The effect of interface migration on ferrite growth rate by changing the interface mobility is emphatically discussed. In the case of the low interface mobility, the growth rate of ferrite is very small while the growth is dominated by the carbon diffusion ability in the case of large interface mobility. When a medium interface mobility is obtained, the growth rate of ferrite may reach a maximum value, which exceed the limitation of diffusion control and interface control modes. After comparing the modeled growth rate of ferrite with the experimental data of 0.11-0.49 wt% C alloy at 973-1113 K, the pre-expontential factor (M0) of interface mobility is estimated within the range of 0.1-1 mol m J-1 s-1, around the value 0.5 mol m J-1 s-1 theoretically estimated.
Authors: Christopher R. Hutchinson, X. Fan, S.J. Pennycook, Gary J. Shiflet
Authors: Ming Hung Weng, Simon Barker, Rajat Mahapatra, Benjamin J.D. Furnival, Nicolas G. Wright, Alton B. Horsfall
Abstract: We have investigated the annealing of fixed oxide charge and interfacial traps in MISiC strucures by means of the photo capacitance voltage technique at temperatures up to 500°C. Elevated temperature measurements show reduced hysteresis and reduced fixed oxide charge at the interface. The photo capacitance technique shows a real-time measurement at elevated temperatures, in which electrons are populated by photo energy, in a 4H-SiC MIS structure. We also confirm the reduction of fixed oxide charge at the interface by means of high temperature post deposition annealing, which occurs during the high temperature measurements.
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