Papers by Keyword: Low Angle Grain Boundaries

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Authors: Yi Chen, Govindhan Dhanaraj, William M. Vetter, Rong Hui Ma, Michael Dudley
Abstract: The interactions between basal plane dislocations (BPDs) and threading screw and edge dislocations (TSDs and TEDs) in hexagonal SiC have been studied using synchrotron white beam x-ray topography (SWBXT). TSDs are shown to strongly interact with advancing basal plane dislocations (BPDs) while TEDs do not. A BPD can cut through an individual TED without the formation of jogs or kinks. The BPDs were observed to be pinned by TSDs creating trailing dislocation dipoles. If these dipoles are in screw orientation segments can cross-slip and annihilate also potentially leaving isolated trailing loops. The three-dimensional (3D) distribution of BPDs can lead to aggregation of opposite sign edge segments leading to the creation of low angle grain boundaries (LAGBs) characterized by pure basal plane tilt of magnitude determined by the net difference in densities of the opposite sign dislocations. Similar aggregation can also occur against pre-existing prismatic tilt boundaries made up of TED walls with the net difference in densities of the opposite sign dislocations contributing some basal plane tilt character to the LAGB.
Authors: Dirk M. Kirch, Bing Bing Zhao, Dmitri A. Molodov, Günter Gottstein
Abstract: The kinetic and structural behavior of symmetrical <100> tilt grain boundaries with rotation angles 8.4°, 12.0°, 14.3° and 16.0° were investigated in-situ in a hot stage SEM in the temperature range between 380°C and 640°C. The results revealed that depending on the rotation angle the boundary either remained straight, became faceted or curved under the driving force provided by the boundary surface tension during high temperature annealing. The transition “facetedcurved boundary” was also found to depend on temperature. The observed behavior is attributed to the anisotropy of grain boundary energy with respect to boundary inclination.
Authors: Rafael Dalmau, H. Spalding Craft, Jeffrey Britt, Elizabeth Paisley, Baxter Moody, Jian Qiu Guo, Yeon Jae Ji, Balaji Raghothamachar, Michael Dudley, Raoul Schlesser
Abstract: Aluminum nitride (AlN) single crystal boules were grown by physical vapor transport (PVT). Diameter expansion during boule growth, without the introduction of low angle grain boundaries (LAGB) around the boule periphery, was confirmed by crossed polarizer imaging, synchrotron white beam x-ray topography (SWBXT), and synchrotron monochromatic beam x-ray topography (SMBXT). The densities of basal plane dislocations (BPD) and threading edge dislocations (TED) averaged from high-magnification topographs of five regions of a high-quality substrate were 0 cm-2 and 992 cm-2, respectively. Substrates fabricated from AlN boules possessed excellent surface finishes suitable for epitaxy.
Authors: Kim Verbeken, Leo Kestens
Abstract: The nucleation stage of secondary recrystallization has never been considered in detail. During the present study, nucleation of abnormal grain growth in ULC steel was studied. A specific nucleation mechanism was identified. This mechanism involved the disappearance of low angle grain boundaries, which gave rise to the onset of a local grain coalescence mechanism that clusters grains that were only separated by low angle grain boundaries. The impact of the nucleation stage remained visible in the texture that was obtained after complete abnormal grain growth.
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