Papers by Keyword: Low-Pressure CVD

Paper TitlePage

Authors: Tetsuo Takahashi, Yuuki Ishida, Hidekazu Tsuchida, Isaho Kamata, Hajime Okumura, Sadafumi Yoshida, Kazuo Arai
323
Authors: Kanji Yasui, Masahiro Hashiba, Yuzuru Narita, Tadashi Akahane
367
Authors: D. Purser, M. Jenkins, D. Lieu, F. Vaccaro, A. Faik, M.A. Hasan, H.J. Leamy, C. Carlin, Mauro R. Sardela, Qing Xiang Zhao, Magnus Willander, M. Karlsteen
313
Authors: M. Uchida, M. Deguchi, Kazuhiko Takahashi, Makoto Kitabatake, M. Kitagawa
243
Authors: Guo Sheng Sun, M.C. Luo, Lei Wang, S.R. Zhu, Jin Min Li, Yi Ping Zeng, L.Y. Lin
339
Authors: R. Panday, Xiao An Fu, Srihari Rajgopal, T. Lisby, S.A. Nikles, K. Najafi, Mehran Mehregany
Abstract: This paper explores polycrystalline 3C-silicon carbide (poly-SiC) deposited by LPCVD for fabricating flexible ribbon cable interconnects for micromachined neural probes. While doped silicon is used currently, we hypothesized that poly-SiC will provide enhanced mechanical robustness due to SiC’s superior mechanical properties. Paralleling prior work in silicon, forty-two different designs were fabricated from nitrogen-doped poly-SiC films deposited by LPCVD at 900°C using dichlorosilane and acetylene as precursors. The different designs were then tested in bending and twisting modes. Curved beams were found to bend nearly 250% more than straight beams before fracture. Longer beams withstood greater bending and twisting due to greater compliance. Longer and narrower beams generally outperformed shorter beams irrespective of design. Also, doped poly-SiC beams had, on average, breaking angles that were greater than those of identical doped silicon beams by ~50% in bending and ~20% in twisting modes. The paper details the designs studied, describes the fabrication process for the test structures and compares/contrasts the testing and simulation results related to the different designs to identify best design practices.
1107
Authors: S. Carrà, C. Cavallotti, Maurizio Masi
135
Showing 1 to 8 of 8 Paper Titles