Papers by Keyword: LPCVD

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Authors: Zi Bo He, He Jun Li, Xiao Hong Shi
Abstract: In order to improve the anti-oxidation of C/C composites, a C/SiC functionally graded coating for C/C composites was prepared by low pressure chemical vapor deposition (LPCVD) using methyltrichlorosilane (MTS, CH3SiCl3) and H2 as precursors. The relative amount of C and SiC in coatings was varied by controlling the input ratio of H2 to MTS. The phase composition and morphology were examined by scanning electron microscope (SEM) and X-ray diffraction (XRD), and the content distribution of C and SiC phases were investigated by energy dispersive spectroscopy (EDS). The isothermal oxidation test was evaluated at 900 °C and 1500 °C respectively. The results showed that the as-obtained coatings were possessed of a dense and uniform structure, and the SiC content in coatings increased with an increment of the molar ratio of H2 to MTS. The C/SiC coating had a good oxidation resistance.
Authors: H. Möller, W. Legner, G. Krötz
Authors: Christian A. Zorman, Mehran Mehregany
Authors: Andrea Severino, Corrado Bongiorno, Stefano Leone, Marco Mauceri, Giuseppe Pistone, Giuseppe Condorelli, Giuseppe Abbondanza, F. Portuese, Gaetano Foti, Francesco La Via
Abstract: 3C-SiC/Si heteroepitaxy is hampered by large mismatches in lattice parameters (19.7%) and thermal expansion coefficient (8%) leading to 3C-SiC films containing high defects density. To reduce the presence of defects, a multi-step growth process in a CVD reactor is used. The aim of the work is to study the effect of carbonization on differently oriented Si surfaces, experiencing a 200°C-wide temperature range in a CVD reactor, to improve the crystalline quality. TEM analysis are carried out to evaluate thickness, crystal orientations and defects of carbonized layers with respect to the time-dependence of the process and to the different orientations of the Si substrate. It will be shown that process-related defects are strictly correlated to the substrate orientation either for size, density, occupied area, shape or thickness. Uniform, flat and crystalline thin SiC films are obtained with a low defect density.
Authors: J. Dunning, Xiao An Fu, Mehran Mehregany, Christian A. Zorman
Abstract: This paper details the characterization of polycrystalline SiC (poly-SiC) thin films deposited by low pressure chemical vapor deposition. Films were deposited on both Si and SiO2- coated Si substrates using dichlorosilane (SiH2Cl2) and acetylene (C2H2) as precursor gases. Low residual tensile stress films were deposited at 900°C at a pressure of 2 Torr using SiH2Cl2 and C2H2 (5% in H2) flow rates of 35 sccm and 180 sccm, respectively. XRD analysis of these films indicated a (111) 3C-SiC orientation regardless of substrate material. Both resistivity (1.3 -cm) and residual stress gradient (17 MPa/μm) were found to be relatively low and decreased as the film thickness increased. Unintentional nitrogen doping is responsible for the low resistivity measurements and its concentration in the films was about 1.86 x 1016 cm-3. Poly-SiC films exhibiting near-zero residual tensile stress, low stress gradient and relatively low resistivity have favorable properties for design and fabrication of MEMS devices.
Authors: Lei Guo, Xue Kang Chen, Lan Xi Wang, Sheng Zhu Cao, Xiao Hang Bai, Chao Zhang, Yong Min He, Hui Gao
Abstract: ~50 μm single crystal graphene with hexagonal flower shape was synthesized on copper foils by low pressure chemical vapor deposition (LPCVD). The strong influence of Cu foils annealing on suppressing the nucleation of graphene was observed. Scanning electron microscopy (SEM), Optical microscopy (OM), and Raman spectrum showed that single crystal graphene as grown was monolayer with high quality. Suppressing nucleation through an annealing procedure offers an promising way to grow large-scale single crystal graphene controllably.
Authors: Yuuki Ishida, Tetsuo Takahashi, Hajime Okumura, Sadafumi Yoshida, Toshihiro Sekigawa
Authors: Xiao An Fu, J. Dunning, Christian A. Zorman, Mehran Mehregany
Authors: Kristina Roder, Daisy Nestler, Daniel Wett, Bernd Mainzer, Martin Frieß, Lydia Wöckel, Thomas Ebert, Guntram Wagner, Dietmar Koch, Stefan Spange
Abstract: Uncoated SiC fibres in SiC/SiC composites manufactured by the liquid-silicon infiltration (LSI) process show a strong degradation as a result of silicon attack. The goal of this research is the development of a SiNx-based fibre coating, which acts as a barrier against the liquid silicon. The coating is applied by means of low-pressure chemical vapour deposition (LPCVD) utilising the gaseous precursors silane (SiH4) and ammonia (NH3) on a commercial SiC multifilament yarn. The result is an amorphous fibre coating with an increasing coating thickness and a variable chemical composition from the middle of the yarn to the edges. The coated fibres exhibit a reduced characteristic Weibull strength in comparison to the uncoated fibres. In order to examine the stability of the films, the coated fibres undergo a heat treatment at 1450 °C in different environments (vacuum, argon and nitrogen). In all environments, the amorphous SiNx coatings crystallise to the trigonal Si3N4. Depending on the coating thickness cracks and defects develop. However, the best results and the lowest amount of damaging occurs during the treatment in nitrogen.
Authors: Tomio Izumi, K. Kobayashi, E. Hirosawa, Takamitsu Kawahara, Hiroyuki Nagasawa
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