Papers by Keyword: MBE Growth

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Authors: Hamid Khachab, Yamani Abdelkafi, Abderrahmane Belghachi
Abstract: In situ monitoring of surface processes and understanding of growth processes are important in achieving precise control of crystal growth. Therefore, many surface monitoring techniques are used during crystal growth by molecular beam epitaxy (MBE). The most popular is reflection high-energy electron diffraction (RHEED) and photoemission current which provides information on the morphology during the growing surface. The photoemission oscillation technique has been successfully used in situ to monitor the growth of materials and to control the thickness as well as the roughness of the deposited layer. In this paper, we report results of atomic scale simulations used to study the dynamics of homoepitaxial growth of GaAs(001) β2(2x4) reconstructed surface and, in particular, the RHEED oscillations of the photoemission current.
Authors: Ute Kaiser, A. Chuvilin, W. Richter
Authors: M. Ajaz Un Nabi, M. Imran Arshad, Adnan Ali, M. Asghar, M. A Hasan
Abstract: In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown on p-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1 at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1 level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.
Authors: J.L.F. da Silva, R. Enderlein, L.M.R. Scolfaro, J.R. Leite, A. Tabata, K. Lischka, D. Schikora, Friedhelm Bechstedt
Authors: H. Matsuhata, Kotaro Kuroda, Y. Kasai, P. Bodin, S. Sakai
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