Papers by Keyword: MOCVD

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Authors: Yong Qiang Sun, Gan Feng, Zhe Yang Li, Li Ping Lv, Jin Yun Luo, Jin Bo Wu, Yi Yang Li, Jian Hui Zhang
Abstract: Homo-epitaxial growth of 50 μm-thick 4H-SiC on 4° off-axis 100 mm substrates have been demostrated by using a commercial warm-wall multi-wafer planetary reactor (Aixtron 2800 G4). With optimized process, epitaxial layer with an average thickness of 48.146 μm and doping level of 8.39×1014/cm3 are obtained. The thickness uniformity with an edge exclusion of 5 mm are 1.30% (σ/mean) and 2.17% (max-min/max+min), and the doping level uniformity are 4.66% (σ/mean) and 6.95% (max-min/max+min), respectively. Surface roughness of the as-grown 50 μm-thick epitaxial layer has an RMS value of 0.606 nm with one step bunching on the 20×20 μm2 areas. This initial effort on thick 4H-SiC homoepitaxial growth indicates that this comercial multi-wafer planetary reactor has the potential for mass production of SiC epiwafers for 5000 V and above power devices.
163
Authors: Xin Dong, Jin Wang, Hui Wang, Zhi Feng Shi, Bao Lin Zhang
Abstract: NiZnO films were grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Then the films were annealed in vacuum at different temperatures for 1h. The UV emission peak was blue shifted in the photoluminescence (PL) spectra and a dramatic shift of (002) diffraction peak to higher angle was observed in X-ray diffraction (XRD) pattern with the increasing anneal temperature. It showed the band gap and the lattice parameter of NiZnO had been affected by anneal in vacuum. From the X-ray photoelectron spectroscopy (XPS) of the NiZnO film, we can find that the anneal temperature had an important effect on the content of each element in NiZnO quantificationally. In addition, the value of x in NiZnO varied slightly with the anneal temperature increasing. The above phenomena indicated that anneal in vacuum could slightly adjust the percentage of Ni indirectly in NiZnO film and offer a good idea in NiZnO devices facture.
11
Authors: P.L. Etchepare, H. Vergnes, D. Samélor, D. Sadowski, C. Brasme, B. Caussat, C. Vahlas
Abstract: In the field of packaging, coatings are commonly applied on containers to avoid interactions between them and their content. For glass bottles, application of a thin film prevents interactions with the phase in contact and consequently the alteration of surface properties of the latter. In this article, we propose an innovative way to apply amorphous alumina coatings on glass bottles by metalorganic chemical vapor deposition from aluminum tri-isopropoxide. A numerical model, using the Computational Fluid Dynamics code FLUENT, has been developed to calculate local profiles of gas flow, temperature, concentration and deposition rates into the reactor. The sub-micrometric alumina films have been deposited at reduced pressure between 480°C and 670°C. Uniform thickness profiles have been determined on cross sections over the length of the bottle and have been successfully simulated. Strongly improved hydrolytic resistance with regard to the uncoated bottles reveals the excellent performance of the films.
117
Authors: Ju Hyun Myung, Hyoun Woo Kim, S.H. Shim
Abstract: We report on the first synthesis of nanosized In2O3 rods using the TEI as a precursor in the presence of oxygen. The samples were characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy. XRD analysis revealed that the products are In2O3 phase with a tetragonal cubic structure. SEM analysis indicated that the obtained nanorods have a circular cross section and a diameter in the range of 50-150 nm.
146
Authors: Lian Jia Wang, You Zhang Zhu, Hong Xia Wang, Ben Li Liu, Jin She Yuan
Abstract: Recent achievements in III-nitride semiconductor structures growth have allowed ultraviolet (UV) photo-detectors based on these compounds to be well established today. In this article, AlGaN film of 1-μm thickness was grown on Al2O3 substrate by metal-organic chemical vapor deposition (MOCVD). The AFM was used to analyze the surface morphology of the AlGaN film; X-ray diffraction measurements were used to study the quality of the film’ crystal structure; Cathode-ray luminescence(CL) was employed to study the luminescence properties of the AlGaN film. The result shows that there is a single atom layer on the AlGaN film’surface, and it shows that a low-defect-density AlGaN film with good surface morphology and single crystal Hexagonal structure has been obtained. It is found that there is some relationship between the film’crystal structure , dislocations and the luminescence properties . PACS: 73.61.
966
Authors: Jae Chul Song, D.H. Kang, Byung Young Shim, Eun A Ko, Dong Wook Kim, Kannappan Santhakumar, Cheul Ro Lee
Abstract: GaN epilayers were grown on lens shaped patterned sapphire substrate (PSS) (0001) and unpatterned sapphire substrate (UPSS) (0001) by metal-organic chemical vapor deposition (MOCVD). The quality of the grown GaN epilayers on the PSS and UPSS were compared. Structural characteristics, surface morphology and optical properties of the GaN epilayers were investigated using double crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and photoluminescence (PL). A lens shaped pattern was formed on the sapphire substrate to reduce threading dislocation (TD) density and also to improve the optical emission efficiency by internal reflection on the lens. Scanning electron microscopy images show the growth of GaN epilayers at various times. Full coalescence is observed at a growth time of 80 min. It is seen from the DCXRD rocking spectrum that full width at half maximum (FWHM) of the GaN grown on PSS was 438.7 arcsec which is less than UPSS value. The lower value of FWHM indicates that the crystalline quality of the GaN epilayers grown on PSS is improved compared to GaN grown on UPSS. It is clearly seen from the AFM images that the dislocation density is less for the GaN grown on PSS. A strong and sharp photoluminescence (PL) band edge emission was observed for the GaN grown on PSS compared to UPSS. Defect related yellow luminescence was observed for GaN grown on UPSS which did not appear for PSS. The FWHM at the 364.3 nm peak position was evaluated to be 50.7 meV from the PL spectra for GaN grown on PSS. The above result indicates GaN epilayers can be grown on PSS with low TD density and will be useful for optical emission.
355
Authors: Hyoun Woo Kim, S.H. Shim
Abstract: We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.
1230
Authors: Alvars Kjapsna, Lauris Dimitrocenko, Ivars Tale, Anatoly Trukhin, Reinis Ignatans, Rolands Grants
Abstract: Growth of gallium oxide thin film was realized with MOCVD on (0001) sapphire substrate. Structural and compositional properties of thin film were studied employing trimethylgallium and water as precursors, carrier gases were H2 and N2. Obtained film is polycrystalline and predominantly consisted of (201) oriented β-Ga2O3. Sample exhibited blue luminescence which is attributed to oxygen vacancies. H2 gas proved to have beneficial effect on film quality and overall growth process.
253
Authors: Ai Hua Jiang, Hao Yu Jiang, Hang Zhao, Jian Rong Xiao
Abstract: Gallium nitride (GaN) thin films samples were grown by metal-organic chemical vapor deposition (MOCVD) with ammonia and trimethyl-gallium, and the samples were annealed rapidly at different temperature. The scanning electron microscope (SEM) analysis was employed to study the surface morphology and lattice defects of the GaN thin films. The surface morphology of the thin films prepared at different condition was uniform and smoothly. The relationship of the films defects and the annealed temperature were summarized.
2023
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