Papers by Keyword: MOVPE

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Authors: S. Sanorpim, F. Nakajima, R. Katayama, Kentaro Onabe
Abstract: The high quality GaAsN epitaxial films with the typical thickness of 150-200 nm and the N contents up to 5.5% were grown by MOVPE. The maximum N content of 2.75% at the growth temperature of 550 oC was enhanced to 5.1% at 500 oC and 5.5% at 450 oC. The lower growth temperature may efficiently suppress desorption of N atoms from the growing surface. The narrow high-resolution X-ray diffraction peaks and the clear Pendellösung fringes indicate that the GaAsN films with high uniformity and fairly flat interface were obtained. The 6K-photoluminescence (PL) peak energy of the GaAsN films was varied from 1.38 eV to 1.01 eV with increasing N content up to 2.75%, but no near-band-edge emission was observed in the higher-N-content films, indicating the increase of nonradiative recombination centers caused by the N-related lattice imperfections. Besides, after post growth thermal annealing at 650 oC for 2 min, PL spectrum shows that the near-band-edge emission as low as 0.97 eV (1.3 μm) have been achieved with the film of 5.1% N.
218
Authors: S. Sanorpim, P. Kongjaeng, R. Katayama, Kentaro Onabe
Abstract: The use of an InGaAs buffer layer was applied to the growth of thick InxGa1-xAs1-yNy layers with higher In contents (x > 30%). In order to obtain the lattice-matched InGaAsN layer having the bandgap of 1.0 eV, the In0.2Ga0.8As was chosen. In this work, the In0.3Ga0.7As0.98N0.02 layers were successfully grown on closely lattice-matched In0.2Ga0.8As buffer layers (InGaAsN/InGaAs). Structural quality of such layers is discussed in comparison with those of the In0.3Ga0.7As0.98N0.02 layers grown directly on the GaAs substrate (InGaAsN/GaAs). Based on the results of transmission electron microscopy, the misfit dislocations (MDs), which are located near the InGaAsN/GaAs heteroepitaxial interface, are visible by their strain contrast. On the other hand, no generation of the MDs is evidenced in the InGaAsN layer grown on the In0.2Ga0.8As pseudosubstrate. Our results demonstrate that a reduction of misfit strain though the use of the pseudosubstrate made possible the growth of high In-content InGaAsN layers with higher crystal quality to extend the wavelength of InGaAsN material.
221
Authors: Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki
Abstract: The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.
175
Authors: Shinjiro Hara
Abstract: The author introduces and summarizes the results on bottom-up formation and structural characterizations obtained so far for the MnAs nanoclusters and MnAs/semiconductor nanowire hybrids. First, MnAs nanoclusters were grown by selective-area metal-organic vapor phase epitaxy. They had a hexagonal NiAs-type crystal structure. Their <00(0)1> direction was parallel to <111>B direction of zinc-blende-type GaAs substrates. Hybrid MnAs/GaAs nanowires, subsequently, were fabricated by combining selective-area metal-organic vapor phase epitaxy of GaAs nanowire templates and endotaxial MnAs nanoclustering on them. MnAs nanoclusters ordered at six ridges of hexagonal GaAs nanowires were formed possibly owing to more atomic steps between {0-11} crystal facets. In the case of hybrid MnA/InAs nanowires, MnAs nanoclusters were not formed only on the {0-11} side-walls, and/or ridges between them, but on the top {111}B crystal facets of hexagonal InAs nanowires. MnAs nanoclusters were formed much deeper into the InAs nanowires than into the GaAs nanowires. These facts are possibly due to the InAs nanowires are thermally less stable than the GaAs nanowires. Some of the hybrid MnA/InAs nanowires were bent at the parts where the MnAs nanoclusters were grown into the host nanowires mainly owing to the strain effects.
1990
Authors: Takayuki Arai, Kazuo Uchida, Hiroki Tokunaga, Koh Matsumoto
539
Authors: D. Reisinger, M.J. Kastner, K. Wolf, H. Steinkirchner, W. Häckl, H. Stanzl, W. Gebhardt
147
Authors: R.I. Port, K. Durose, B.K. Tanner, J.E. Hails, J.S. Gough, M.G. Astles, M. Celeste Carmo, Manuel J. Soares
151
Authors: Pornsiri Wanarattikan, Sakuntam Sanorpim, Somyod Denchitcharoen, Kenjiro Uesugi, Takehiko Kikuchi, Shigeyuki Kuboya, Kentaro Onabe
Abstract: We have investigated an effect of N incorporation on InGaAsN on Ge (001), which is proposed to be a part of the InGaP(N)/InGaAs/InGaAsN/Ge four-junction solar cell, and on its growth behavior. Results obtained from high resolution X-ray diffraction and Raman scattering demonstrated that high quality In0.11Ga0.89As1-yNy films with N (y) contents up to 5% were successfully grown on n-type doped Ge (001) substrate by metalorganic vapor phase epitaxy using low-temperature (500°C) GaAs buffer layer. As expectation, the In0.11Ga0.89As0.96N0.04 film is examined to be under lattice-matching condition. Anti-phase domains were observed for the film without N incorporation, which exhibits submicron-size domains oriented along the [110] direction on the grown surface. With increasing N content, the domains become less orientation, and present in a larger domain size. Based on results of transmission electron microscopy, a high density of anti-phase domains was clearly observed at the interface of low-temperature GaAs buffer layer and Ge substrate. On the other hand, it is found to drastically reduce within the N-contained InGaAsN region. Furthermore, the lattice-matched In0.11Ga0.89As0.96N0.04 film is well developed to reduce the density of anti-phase domains.
129
Authors: P. Klangtakai, S. Sanorpim, S. Kuboya, R. Katayama, Kentaro Onabe
Abstract: The GaAs1-xNx alloy semiconductor has been grown on GaAs (001), (111)A and (011) substrates by metalorganic vapor-phase epitaxy. High resolution X-ray diffraction and Raman scattering were employed to examine the effective N content and the growth rate, as a function of the substrate-surface orientation. The growth rate, which was assessed though the clear Pendellösung fringes, and the N content were found to change dramatically with the substrate-surface orientations. The N content was determined in the order (111)A > (001) > (011). While, the growth rate is in the order, (001) > (011) > (111)A. The effect of substrate-surface orientation on the N incorporation found in the present study is interpreted in terms of the difference in the growth rate on each surface orientation and the number of dangling bonds with which the N atoms can be trapped on the growing surface. Our results show that controlled nitrogen incorporating for GaAsN is successfully achieved and can be applied to the fabrication of some novel structures such as a spontaneous N content modulated structure, which is applicable to high performance long wavelength laser diodes.
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