Papers by Keyword: Nanofabrication

Paper TitlePage

Authors: J.K. Kim, J.W. Park, K.Y. Suh
Abstract: In this report, nanopatterns consisting of an organic polymer film were fabricated using a simple detachment method. The method used a patterned ultraviolet (UV) curable poly(urethane acrylate) (PUA) as a mold and an organic polymer layer as a template material. A thin film was prepared by spin coating and then annealed below the glass transient temperature while in physical contact with the PUA mold. The polymer layer in contact with the mold was detached due to the difference in adhesion force, resulting in a well-defined nanoarray of the polymer template. Nanopatterns as small as 70 nm lines were fabricated using this approach.
469
Authors: Ming Chang, Chia Hung Lin, Chung Po Lin, Juti Rani Deka
Abstract: With rapid expansion of nanotechnology, microminiaturization has become imperative in the field of micro/nano fabrication. A nanomanipulation system with high degrees of freedom that can perform nanomachining, nanofabrication and mechanical/electrical characterization of nanoscale objects inside a scanning electron microscope (SEM) is presented. The manipulation system consists of several individual operating units each having three linear stages and one rotational stage. The body of the manipulator is designed using the idea of superposition. Each operating unit can move in the permissible range of SEM’s vacuum chamber and can increase or decrease the number of units according to the requirement. Experiments were executed to investigate the in-situ electrical resistance of nano materials.
21
Authors: Masayuki Shimojo, Kazutaka Mitsuishi, M. Tanaka, M. Song, Kazuo Furuya
Abstract: Nanometre-sized structures were fabricated by electron beam-induced deposition in a scanning transmission electron microscope. A small amount of metal-organic gases, W(CO)6 and dimethyl acetylacetonato gold, were introduced near a substrate in the chamber of the microscope. The gas was decomposed by the irradiation of focused electron beams and nanometre-sized deposits containing W or Au were produced. Moving the beam position enables us to produce structures with a variety of shapes. High-resolution electron microscopy observation revealed that the structures consisted of nano-crystalline and amorphous parts.
129
Authors: Chun Jen Weng
Abstract: As wafer nanotechnology gate is scaling down, the fabrication technology of gate spacer for transistor becomes more critical in manufacturing processes. Because wafer fabrication technologies, sidewall spacers play an important role in the control of short channel effects by offsetting ion implantation profiles from the edge of the gate. The present study is to overcome the fabrication processes limitations and proposed modified feasible etching processes integration on the formation processing for complementary metal oxide semiconductor nanofabrication process of gate spacer technology and electrical characteristics.
938
Authors: Chun Jen Weng
Abstract: As the nanotechnology gate is scaling down, the fabrication technology of gate spacer for CMOS transistor becomes more critical in manufacturing processes. For CMOS technologies, sidewall spacers play an important role in the control of short channel effects by offsetting ion implantation profiles from the edge of the gate. A sidewall spacer patterning technology yields critical dimension variations of minimum-sized features much smaller than that achieved by optical Complementary Metal–Oxide–Semiconductor (CMOS) fabrication processes integration. The present study is to overcome the fabrication limitations and more particularly focus on etching processes integration on structural and formation processing for complementary metal oxide semiconductor nanofabrication process on gate spacer technology and electrical characteristics performance of nanotechnology gate structure were included. Based on the investigation of the etching effect and interface film variation on the electrical characteristics of the gate oxide on etching profile and their impacts on the sidewall transistor gate structure, a novel etching integration process for optimal controlled sidewall gate spacer fabrication was developed.
91
Authors: Masayuki Shimojo, Masaki Takeguchi, Kazutaka Mitsuishi, M. Tanaka, Kazuo Furuya
Abstract: Electron beam induced-deposition (EBID) is a promising technique for fabricating nanometer-sized structures in a position- and size-controlled manner. The resolution of EBID is now reaching down to subnanometers. However, the deposits obtained by EBID contain a large amount of carbon. Thus, carbon reduction techniques are needed. In this study, nanostructures, such as nanowires, were fabricated by EBID using an iron pentacarbonyl precursor. Several techniques to reduce carbon were applied, including post-deposition heat-treatments and the modification of precursor. It was found that the post-deposition heat-treatment in air resulted in a formation of Fe2O3, and that carbon-free Fe3O4 was formed by mixing a small amount of water vapor in the iron pentacarbonyl precursor.
1101
Authors: Ye Yang, Wan Sheng Zhao
Abstract: The requirement for fabrication of the nanometer-scale structures has grown up recently due to the advance in the development of the nanoscale electronic-devices or bio-devices. Scanning tunneling microscope (STM)-based electric lithography is one of the potential fabrication approaches to produce nanoscale structures on a variety of materials. This study of the STM-based electric lithography intends to fabricate flat-bottomed and lamellar structures on the graphite surface, which differs from the conventionally fabricated tapered structures. The formation and the comparison of both the lamellar and tapered structures are obtained by applying distinct STM tip geometries in the STM-based electric lithography. On the basis of the experimental results, it is found that the formation of lamellar structures should be attributed to the local electrochemical reaction, while the generation of tapered structures is resulted from the dielectric breakdown in the tip-sample gap.
45
Authors: Masaharu Shiratani, Masahiro Soejima, Hyun Woong Seo, Naho Itagaki, Kazunori Koga
Abstract: We are developing plasma nanofabrication, namely, nanoand micro scale guided assembly using plasmas. We manipulate nanoand micro objects using electrostatic, electromagnetic, ion drag, neutral drag, and optical forces. The accuracy of positioning the objects depends on fluctuation of position and energy of a fine particle (= each object) in plasmas. Here we evaluate such fluctuations and discuss the mechanism behind them. In the first experiment, we grabbed a fine particle in plasma using an optical tweezers. The fine particle moves in a potential well made by the optical tweezers. This is a kind of Brownian motion and the position fluctuation can be caused by neutral molecule collisions, ion collisions, and fluctuation of electrostatic force. Among theses possible causes, fluctuation of electrostatic force may be main one. In the second experiment, we deduced interaction potential between two fine particles during their Coulomb collision. We found that there exist repulsive and attractive forces between them. The repulsive force is a screened Coulomb one, whereas the attractive force is likely a force due to a shadow effect, a non-collective attractive force. Moreover, we noted that there is a fluctuation of the potential, probably due to fluctuation of electrostatic force. These position and potential energy fluctuations may limit the accuracy of guided assembly using plasmas.
1772
Authors: Ashok Kumar
Abstract: Moores law predicts the reduction of the device elements size and the advancement of physics with time for the next generation microelectronic industries. Materials and devices sizes and enriched physics are strongly correlated phenomena. Everyday physics moves a step forward from microscale classical physics toward nanoscale quantum phenomenon. Similarly, the vast micro/nanoelectronics needs advancement in growth and characterization techniques and unexplored physics to cope with the 21st century market demands. The continuous size reduction of devices stimulates the researchers and technocrats to work on nanomaterials and devices for the next generation technology. The semiconductor industry is also facing the problem of size limitation and has followed Moores law which predicts 16 nm nodes for next generation microelectronic industries. Nanometer is known as the 10 times of an Angstrom unit, where it is common consensus among the scientists that any materials and devices having physical dimensions less than 1000 times of an Angstrom will come under the umbrella of Nanotechnology. This review article focuses on the fundamental aspects of nanoscale materials and devices: (i) definitions and different categories of nanomaterials, (ii) quantum scale physics and technology, (iii) self-assembed nanostructures, (iv) growth conditions and techniques of 0D, 1D, 2D, and 3D dimensional materials, (v) understanding of the multifunctionalities of the nanomaterials, (vi) nanoscale devices for low energy consumption and fast response, (vii) integration of nanoscale materials with Si-based systems, and (viii) major technical challenges.
1
Authors: Z.H. Sun, C.L. Xu, Hao Li Zhang
Abstract: The surface morphology of the anodic aluminum oxide (AAO) prepared with different surface coating has been studied by AFM and SEM. Under optimized condition, highly ordered stripe patterns have been obtained. These regular patterns, including random stripes and regular stripes, show strong dependence on the crystal orientation of the aluminum substrate. This method can be developed into a novel nanoscale fabrication technique.
445
Showing 1 to 10 of 20 Paper Titles