Papers by Keyword: Nanolithography

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Authors: Hamidreza Zamani, Seung Wan Lee, Amir Avishai, Christian A. Zorman, R. Mohan Sankaran, Philip X.L. Feng
Abstract: We report on experimental explorations of using focused ion beam (FIB) nanomachining of different types of silicon carbide (SiC) thin membranes, for making robust, high-quality stencil masks for new emerging options of nanoscale patterning. Using thin films and membranes in polycrystalline SiC (poly-SiC), 3C-SiC, and amorphous SiC (a-SiC) with thicknesses in the range of t~250nm−1.6μm, we have prototyped a series of stencil masks, with nanoscale features routinely down to ~100nm.
Authors: Teppei Onuki, Takashi Tokizaki, Hirotaka Ojima, Jun Shimizu, Li Bo Zhou
Abstract: Pattern size controllability of SPM-based nano-lithography especially in vertical direction was improved using in-situ height and depth measurements at the processed point. The transient oxide growth was monitored by light transmission (depth of the oxide in sample metal surface) and topographical signals measurements obtained from a scanning near-field optical microscope. First, we investigated oxidizing rate limitation on titanium film. At the voltage rise faster than 10 V/sec, the depth growth didn’t follow the voltage change in spite of immediate upheaval growth. This result suggested the rate determining of reactive chemicals transport in the titanium oxide. Next, we discovered improvement in the process stability on intractable materials (e.g. iron group elements or noble metals; manganese in this paper) by using thin cap layer of titanium. As the result, the oxidization reaction progressed moderately due to the facts that the oxide of the cap layer is electrical insulative and restriction of the permeability of the reactive chemicals (ingredients of the oxide) that were electrochemically generated at apex of the probe tip.
Authors: Young Suk Kim, Seong Ho Yang, Chan Il Kim, Seoung Soo Lee
Authors: Clivia M. Sotomayor Torres, A. Ross, Y.S. Tang, A. Ribayrol, S. Thoms, A.S. Bunting, He Ping Zhou, K. Tsutsui, H. McLelland, H.P. Wagner, B. Lunn, D.E. Ashenford
Authors: Hui Min Xie, Zhan Wei Liu, Ming Zhang, Peng Wan Chen, Feng Lei Huang, Qing Ming Zhang
Abstract: In this paper, a novel nano-moiré grating fabrication technique was proposed for nanometer deformation measurement. The grating fabrication process was performed with the aid of Atomic Force Microscope (AFM) on the basis of micro-fabrication technique. On the analysis of some correlative factors of influencing grating line quality, some important experimental parameters were optimized. In this study, some parallel and cross nano-gratings with frequencies of from 10000lines/mm to 20000lines/mm were fabricated. The successful experimental results demonstrate that the nano-grating fabrication technique is feasible and also indicated that these nano-gratings with nano-moiré method can be applied to deformation measurement, which offers a nanometer sensitivity and spatial resolution.
Authors: Farhad Larki, Arash Dehzangi, Jumiah Hassan, Alam Abedini, E.B. Saion, Sabar D. Hutagalung, A. Makarimi Abdullah, M.N. Hamidon
Abstract: The spark of aggressive scaling of transistors was started after the Moors law on prediction of device dimensions. Recently, among the several types of transistors, junctionless transistors were considered as one of the promising alternative for new generation of nanotransistors. In this work, we investigate the pinch-off effect in double gate and single gate junctionless lateral gate transistors. The transistors are fabricated on lightly doped (1015) p-type Silicon-on-insulator wafer by using an atomic force microscopy nanolithography technique. The transistors are normally on state devices and working in depletion mode. The behavior of the devices confirms the normal behavior of the junctionless transistors. The pinch-off effect appears at VG +2.0 V and VG +2.5 V for fabricated double gate and single structure, respectively. On state current is in the order of 10-9 (A) for both structures due to low doping concentration. The single gate and double gate devices exhibit an Ion/Ioff of approximately 105 and 106, respectively.
Authors: Chan Il Kim, Young Suk Kim, Sang Il Hyun, Seung Han Yang, Jun Young Park, Kyoung Hoan Na
Abstract: Molecular dynamics simulations are performed to verify the effect of grain boundary on nanolithography process. The model with about two hundred thousand copper (Cu) atoms is composed of two different crystal orientations of which contact surfaces are (101) and (001) planes. The grain boundary is located on the center of model and has 45 degreeangle in xz-plane. The tool is made of diamond-like-carbon with the shape of Berkovich indenter. As the tool is indented and plowed on the surface, dislocations are generated. Moreover, during the plowing process, the steps as well as the typical pile-ups are formed in front of the tool. These defects propagate into the surface of the substrate. As the tool approaches to the grain boundary, the defects are seen to be accumulated near the grain boundary. The shape of the grain boundary is also significantly deformed after the tool passes it. We observed the forces exerted on the tool by the contact with substrate, so that the friction coefficients can be obtained to address the effect of the grain boundary on the friction characteristics.
Authors: L.B. Zhang, J.X. Shi, Ju Long Yuan, Shi Ming Ji, M. Chang
Abstract: Scanning probe microscopy (SPM) has proved to be a powerful tool not only for imaging but also for nanofabrication. SPM-based nanofabrication comprises manipulation of atoms or molecules and SPM-based nanolithography. SPM-based nanolithography, referred to as scanning probe lithography (SPL) in this review, holds good promise for fabrication of nanometer-scale patterns as an emerging generic lithography technique that STM, AFM, and SNOM are directly or otherwise used to pattern nanometer-scale features under appropriate conditions. Patterning methods including mechanical SPL, electrical SPL, thermal SPL, and optical SPL, are described in terms of SPL mechanisms. The newly developed variations of the above-mentioned SPL methods such as dip pen nanolithography, nanoshaving and nanografting, replacement lithography, constructive nanolithography, nanojet lithography, and electrostatic lithography, are also illustrated respectively. Analyses of prospective application of these SPL methods are presented finally.
Authors: Jen Ching Huang, Fu Jen Cheng
Abstract: In this paper, the nanomachining experiments on the SPR3001 photoresistor thin films were processing by contact mode atomic force microscopy (AFM). After the experiment, it can be found, in the nanomachining, the greater the indented distance along the Z-axis depth, carved out of the groove depth and groove width of nanoline is greater. The influences of cutting directions on line width and cutting depth during nanomachining were quite a few and the cutting situation was stable by lateral nanomachining. This article also successfully processed the regular hexagonal nanopattern, also proves the nanomachining ability of the AFM probe is good at nanoscale patterned on photoresistor thin films.
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