Papers by Keyword: Oscillation

Paper TitlePage

Authors: Sung Hyun Kim, Sang Gyun Lee, Seung Gun Choi, Woong Kirl Choi, Eun Sang Lee, Chul Hee Lee, Hon Jong Choi
Abstract: The polishing is one of the important methods in manufacturing of silicon wafer and in thinning of completed device wafer. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, down-force, slurry ratio are investigated, time is used as a fixed factor. This study will report the evaluation on surface of wafer by dependent of varying platen, chuck rpm, temperature variation, and oscillation which affect it has on the surface roughness. In this experiment, it is determined the optimum condition for polishing silicon wafers. By using optimum condition, it helps to achieve an ultra precision mirror like surface.
Authors: Yun Zeng, Li Xiang Zhang, Jing Qian, Ya Kun Guo, Tian Mao Xu
Abstract: The change of mechanical torque is usually ignored in small disturbance of power systems, which means that influences of the hydro turbine and governor system (HTGS) have been ignored. The disturbance characteristics of the hydro turbine generating units including the HTGS is studied based on torque coefficients method in this paper, and calculating method and expressions of torque coefficients of the HTGS are given. The additional mechanical damping produced by the HTGS can be expressed as DtΔω, therefore, it can be merged into the damping item in the motion equation of generator, that means that its action is equivalent to modify damping coefficient D. Using a case, the analysis and calculation method are introduced, and several conclusions are given.
Authors: Hwa Soo Lee, S. Sasaki, T. Yamada, K. Mizukawa, Y. Ono
Authors: Wen Cao, Xue Jin Zhou, Yun Tao Gao
Abstract: Ultrasonic-assisted extraction of lead from red soil using EDTA was investigated, the experimental result was compared with that of oscillation extraction to evaluate the performance of ultrasonic-assisted extraction. The optimum extraction conditions were 0.006 mol/L of EDTA, 0.006 mol/L of EDTA and 90 min of ultrasonic-assisted extraction or 240 min of oscillation extraction. Under the optimum extraction conditions, the extraction rate of 76.33% and 74.30% was obtained for ultrasonic-assisted extraction and oscillation extraction, respectively. The ultrasonic-assisted extraction could shorter the extraction time with a improved extraction rate effectively.
Authors: Shuichi Ono, Manabu Arai, C. Kimura
Abstract: We fabricated a p+/n-/n+ 4H-SiC IMPATT diode with guard-ring termination. The p+ - layer and the guard-ring were formed by ion implantation. The diode showed abrupt avalanche breakdown characteristics and we obtained a peak output power of 1.8 W at 11.93 GHz, which is the highest peak output power ever for the SiC IMPATT diodes in X-band.
Authors: Jin Li Xie, Jian Yu Zhao, Qin Jun Zhao, Yue Yang Li
Abstract: Based on linear-response-like approach and simulations, the relationship between the strength of inhibitory feedback and the oscillation is explored by spectral properties of networks with leaky integrate-and-fire neurons under varying feedback strength. It is found that the network oscillation is enhanced sharply with increasing the feedback strength when the feedback is weak, but is insensitive to the feedback strength when the feedback is not weak. These results suggest that inhibitory feedback plays a limited role in enhancing the network oscillation. A qualitative analysis of the limited role of the inhibitory feedback in enhancing network oscillation is also presented.
Authors: Shoji Mishiro, Hu Bin Qun, Tomoyasu Imai, Anurag Sharma, Kiyoshi Suzuki, Tetsutaro Uematsu, Manabu Iwai
Authors: Michael Modigell, M. Hufschmidt
Abstract: Oscillation experiments, creep tests and shear stress ramps have been performed to analyze the yield stress and its time dependency. It has to be distinguished between iso-structural, dynamic and static yield stress. The iso-structural yield stress occurs immediately after shearing. Since the slurry structure remains unchanged, it is equivalent to the structure during shearing. At rest an internal structure builds up, this leads to an increase of the yield stress, which is referred to as the dynamic yield stress. It increases until its maximum value, the static yield stress, is reached.
Authors: Xiao Chen Mao
Abstract: This paper reveals the dynamical behaviors of a coupled network consisting of a pair of five-neuron loops and couplings between the individual loops. Delays are introduced into the couplings between loops and the connections within the individual loops. The local stability of the network equilibrium and the existence of Hopf bifurcation are discussed. Rich dynamical behaviors are numerically observed, such as multiple stability switches and multi-stability.
Showing 1 to 10 of 62 Paper Titles