Papers by Keyword: Oxygen Precipitates

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Authors: Sergio Pizzini, Simona Binetti, Alessia Le Donne, E. Leoni, Maurizio Acciarri, Giancarlo Salviati, L. Lazzarini
Authors: Scott A. McHugo, T. Heiser, H. Hieslmair, C. Flink, Eicke R. Weber, S.M. Myers, G.A. Petersen
Authors: Atsushi Ikari, Katsuhiko Nakai, Y. Tachikawa, H. Deai, Y. Hideki, Yasumitsu Ohta, Naoya Masahashi, S. Hayashi, T. Hoshino, Wataru Ohashi
Authors: Kozo Nakamura, Junsuke Tomioka
Abstract: This paper presents a model for the analysis of the surface nucleation and growth of Ni silicide on silicon wafers contaminated by Ni. The model can additionally be used to characterize the gettering reaction of Ni induced by oxygen precipitates. We also discuss the relation between the surface precipitation of Ni silicide and the gettering ability of oxygen precipitate. The surface precipitation of Ni silicide depends on the total surface area of oxide precipitates. When the total surface area of the oxide precipitates exceeds the critical value, the surface precipitation is rapidly suppressed. Our model can explain the phenomenon of the gettering threshold in the following manner. 1) The gettering of Ni by oxygen precipitates is a reaction-limited process at the interface between oxygen precipitate and silicon, as Sueoka proposed. 2) The residual Ni concentration in this reaction-limited gettering process continuously decreases as the total surface area of the oxide precipitates increases. 3) The surface precipitation of Ni silicide is rapidly suppressed when the residual Ni concentration falls below the critical concentration. Our calculation results correspond well with the experimental results.
Authors: Seiichi Isomae, Hidetsugu Ishida, Toshihiko Itoga, Kazuyuki Hozawa
Authors: Eugene B. Yakimov, Olga V. Feklisova, Maurizio Acciarri, Anna Cavallini, Sergio Pizzini
Authors: Julien Nicolai, Nelly Burle, Bernard Pichaud
Abstract: High temperature annealing effects on Oxygen-induced defects formation has been studied by IR-LST, FTIR and TEM techniques. The results show that most defects are amorphous oxygen precipitates and/or dislocations. Ham’s theory has been modified in order to take into account the variations of interstitial oxygen concentration during the formation of precipitates. Comparison between experimental data and simulation shows that the specificity of annealing cycle is to combine both nucleation and growth stages. The morphology and stoechiometry of SiOx precipitates are also studied.
Authors: Mitsuhiro Hasebe, Katsuhiko Nakai, Wataru Ohashi, Y. Ikematsu, T. Mizutani, T. Iwasaki
Authors: Béla Pécz, O. Klettke, Gerhard Pensl, J. Stoemenos
Authors: Dawid Kot, Gudrun Kissinger, Markus Andreas Schubert, Andreas Sattler, Timo Müller
Abstract: Two getter tests were carried out in order to study the getter efficiency of oxygen precipitates in silicon samples contaminated with low and high Cu concentration. The samples were pre-treated by RTA followed by annealing in the temperature range between 700 °C and 1000 °C for various times in order to establish different concentrations and different sizes of oxygen precipitates in the samples. From the analysis of the results of the normalized inner surface and the gettering efficiency, it was deduced that in highly contaminated samples Cu precipitates more easily at dislocations than at the surface of oxygen precipitates. Contrarily, in the samples contaminated with low Cu concentration the presence of dislocations does not improve the getter efficiency. Cu precipitates were found at the edge of a plate-like precipitate in a sample with low Cu concentration.
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