Papers by Keyword: PECVD

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Authors: Chong Mu Lee, Kyung Ha Kim
Abstract: Diamond-like carbon (DLC) films have been deposited by radio frequency plasma enhanced chemical vapour deposition (rf-PECVD) with different Ar-CH4 mixtures. Nanocrystalline diamond films have been deposited by microwave plasma-enhanced chemical vapour deposition (MPCVD), using Ar-H2-CH4 mixtures. X-ray photoelectron spectroscopy (XPS) and nanotribological investigation (by scanning force microscopy) have been used to compare the mechanical properties and structures of these films. Highly orientated and non-orientated microcrystalline diamond films and MPCVD-produced amorphous carbon have also been studied by way of comparison. The diamond films exhibit a linear relationship between roughness and the coefficient of friction. The DLC and amorphous carbon have higher friction coefficients than the best performing diamond film, but may more easily be deposited as smooth coating. Possible applications for these various carbon-based films include microelectromechanical components, for which smooth, hard coatings are required.
Authors: Day Shan Liu, Yu Ko Liao, Cheng Yang Wu, Fuh Shyang Juang, Ching Ting Lee
Abstract: A hard coating silicon oxide film was deposited on flexible substrates by a PECVD system. Tertramethylsilane (TMS) and oxygen were employed as raw materials. Surface roughness and hardness of these films deposited under various TMS/O2 gas flow ratio, rf power and chamber pressure were investigated. At adequate fabricated conditions, the original surface roughness of PMMA (~ 3.36 nm) and PC (~ 1.38 nm) substrates was markedly flatted to 1.52 and 0.39 nm, respectively. Meanwhile, the surface hardness of coated PMMA and PC substrates was also enhanced to 6.077 GPa and 3.978 GPa, respectively. The hardness of silicon oxide film deposited by TMS-PECVD system was superior to silicon oxide films prepared from e-beam evaporation and dipping technologies.
Authors: Klaus T. Kallis, L.O. Keller, H.L. Fiedler
Abstract: The standard Local Oxidation of Silicon (LOCOS) technique uses different oxidation rates of silicon and Low Pressure Chemical Vapour Deposited (LPCVD) silicon nitride in steam ambient to structure the field oxide. Due to different coefficients of thermal expansion a pad oxide is needed at the boundary layer to prevent stress from the substrate. This leads to a lateral diffusion of oxygen, also known as “birds beak”, which limits the minimum structure size to a few 100 nm [1]. When scaling down to this dimension, the Shallow Trench Isolation (STI) has become the standard isolation technique for fabrication of high-performance semiconductors to allow a high package density. Unfortunately the STI-process uses Chemical Mechanical Polishing (CMP) which increases the process complexity and leads to high costs. Therefore a new method which uses a low stress Plasma Enhanced Chemical Vapour Deposited (PECVD) silicon nitride without a pad oxide at the boundary layer will be presented in this paper.
Authors: Huan Xiong Xia, Dong Xiang, Peng Mou, Han Zhang
Abstract: The temperature distribution in the reactor, especially on the surface of the wafer, is the important factors influencing the chemical reaction in CVD and PECVD process. This paper focused on a typical cylindrical PECVD reactor carrying with a wafer, and established the combination calculation model, which divided the chamber system into two calculation domains according to the rarefied degree of the gases. A one-dimensional thermal model was developed to calculate the temperature profiles in the narrow gap between the wafer and the heater, considering the heat conduction, radiation and thermal accommodation phenomenon between the gas and the surfaces in low pressure conditions; a two-dimensional axisymmetric model was applied to calculate the temperature profiles in the chamber above the wafer, considering the heat conduction, radiation and mass transfer. We verified the validity of the model through the experimental measurement in different pressure with the aluminum matrix pedestal and the one without. The experiment and numerical calculation both pointed out that there are 15~30K temperature drop in the narrow gap between the wafer and heater with the pressure of 1~10Torr at the outlet of the chamber, the mass flow of 5000sccm at the inlet, and the fixed temperature of 673K within the heater. The lower the pressure was, the greater the differences were, and it presented a negative exponential relation. In addition, this paper predicted the response of the wafer surface temperature to the change of the narrow gap height and chamber pressure via numerical calculation model. The results showed a negative linear relationship between the wafer top surface temperature and the narrow gap height. When the narrow gap height was changed in the range of 0.15~2mm and chamber pressure of 1~10Torr, the temperature of wafer will drop 0.5~5.5K.
Authors: Yu Cang Wang, Rui Min Jin
Abstract: Undoped amorphous silicon film deposited by PECVD,and annealed by rapid tharmal process,then have been studied by using micro-Raman scattering, X-ray diffraction and scanning electron microscope.It is found that crystallized silicon films is different at different annealing temperatures, there exists a better annealing temperature.
Authors: Leandro Raniero, Hugo Águas, Luís Pereira, Elvira Fortunato, Isabel Ferreira, Rodrigo Martins
Authors: Yong Sup Yun, Takanori Yoshida, Norifumi Shimazu, Yasushi Inoue, Nagahiro Saito, Osamu Takai
Abstract: Plasma diagnosis was performed by means of optical emission spectroscopy in the plasma-enhanced chemical vapor deposition process for preparation of hydrocarbon-doped silicon oxide films. The chemical bonding states were characterized by a fourier-transform infrared spectrometer. Based on the results of the diagnosis in organosilane plasma and the chemical bonding states, a reaction model for the formation process of hydrocarbon-doped silicon oxide films was discussed. From the results of optical emission spectroscopy, we found that the oxygen atoms of methoxy groups in TMMOS molecules can be dissociated easily in the plasma and behave as a kind of oxidizing agent. Siloxane bondings in HMDSO, on the other hand, hardly expel oxygen atoms.
Authors: Xiu Qin Wang, Jian Ning Ding, Ning Yi Yuan, Shu Bo Wang
Abstract: Boron-doped nanocrystalline silicon thin films(p-nc-Si:H) were deposited on glass substrates by plasma enhanced chemical vapour deposition (PECVD) using SiH4 / H2 / B2H6. The effects of substrate temperature, rf power and diborane flow on the microstructure, the electrical properties of nanocrystalline silicon thin films have been investigated. The results show that, increasing substrate temperature, rf power and B2H6 flow can improve the conductivity of P-Si thin film. However, exceeding one value, they are not advantageous to improve the conductivity due to the decrystallization of films. Hence, appropriate process conditions are crucial for the preparation of high quality p layer. crystalline volume fraction (Xc) 26.2 %, mean grain size (d) 3.5nm and conductivity 0.374S/cm, p-nc-Si:H thin film was deposited.
Authors: Jong Kug Park, Won Seok Choi, Hyun Suk Hwang, Kyoung Hak Lee, Jung Hyun Kim, Yeun Ho Joung
Abstract: Secondary cells, which are the core storage media of energy storage systems (ESS), and carbon nanowalls (CNWs), which are expected to improve the performance of supercapacitors while being used as their electrodes, were investigated in this study. CNWs were directly grown on the substrate, and the substrate was a Si wafer with a nickel layer deposited on top of it. The nickel layer was deposited with the RF-magnetron sputtering method using a 4-inch Ni target. The CNWs were grown on the prepared substrate using microwave plasma-enhanced chemical vapor deposition (PECVD). The substrate temperature was changed from 550 to 800°C by 50°C increments to identify the growth characteristics according to the growth temperature. The surficial and cross-sectional images according to the temperature were analyzed using a field emission scanning electron microscope (FE-SEM). It was confirmed that the density of the CNWs increased along with the temperature. Especially, it was confirmed that the density increased dramatically at 750°C or higher.
Authors: M. Kihel, R. Clergeraux, Salah Sahli, D. Escaich, Y. Segui, Patrice Raynaud
Abstract: Some investigations on physico-chemical properties of hydrogenated amorphous carbon (a-C:H) thin films deposited from C2H4 precursor have been carried out. The films were elaborated in a Microwave Multipolar Plasma reactor excited at Distributed Electron Cyclotron Resonance (MMP-DECR). The effects of the plasma power on the electrical and structural characteristics of the deposited films have been evaluated. It appeared that for low plasma power ( 400 W), the deposition rate and the hydrogen concentration increases, whereas the Csp2 concentration remains constant. Beyond 400 W, the deposition rate and the hydrogen concentration reach saturation levels and the Csp2 concentration decreases. In contrast, the film density decreased with the increase of the plasma power. Below 400 W, the dielectric constant decreased with the increase of the plasma power, however, beyond 400 W its value remained almost constant. The correlation between film characterization and properties shows that the permittivity is driven by the film density and the film structure.
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