Papers by Keyword: Photodiode

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Authors: L.B. Rowland, Jeffery L. Wyatt, Jody Fronheiser, Alexey V. Vert, Peter M. Sandvik, T. Borsa, J. Van Zeghbroeck, Bart Van Zeghbroeck, S. Babu
Abstract: We report on the fabrication and testing of SiC p-i-n avalanche photodiodes. APDs of 0.25 mm2 area on a-plane (1120) 6H-SiC as well as off-axis Si face 6H and 4H-SiC were successfully fabricated. A beveled mesa was used as edge termination. Recessed windows were formed using reactive ion etching to enhance low-wavelength UV performance. We performed current-voltage tests with and without UV illumination to determine dark current, photocurrent, and gain on selected devices. Dark current was less than 1 pA at 0.5Vbr on multiple devices. Quantum efficiency of 40% or greater was observed for all orientations and polytypes.
Authors: Johan De Keuster, Joost R. Duflou, Jean Pierre Kruth
Abstract: In this paper, the development of a monitoring system for high-power CO2 laser cutting of thick steel plates (>15 mm) is reported. The aim of this system is to increase the robustness and autonomy of the laser cutting process of thick plates, which is still characterized by more narrow process windows compared to cutting of thin sheets. The applicability for monitoring purposes of two types of sensors is investigated: the acoustic microphone and the photodiode. For both types, correlation between the sensor output and the cut quality is investigated. Both contour cutting and piercing are covered in the study. The full penetration of the piercing can be monitored by both sensors. Furthermore quantitative relations between cut quality parameters and photodiode signal parameters could be determined: the mean level of the photodiode signal correlates well with the drag of the striations and dross formation, whereas the standard deviation proves to correlate well with the occurrence of burning defects and the cut edge roughness.
Authors: Wei Song, Zhi Yong Meng, Shu Wang Chen
Abstract: Photoelectric detection technology is a kind of new technology of non-contact measurement in terms of the modern photoelectric devices such as laser, infrared ray and optical cable. Through the detecting on the radiation with the information of the detecting objects and extracting the useful information by the input circuits, inputting LED from the A/D interface, and then the parameters such as geometric quantity or physical quantity are displayed. The design of illumination intensity measure instrument is based on photoelectric detection technology. It receives the incident light through the photodiode and converts the light energy into electrical energy. Have been filtered and amplified, the current is converted into digital value by the ICL7106 A/D converter, and the accurate data is displayed on the LED digital tube. So the data is the value of Illumination intensity at the moment.
Authors: Feng Yan, Xiao Bin Xin, Petre Alexandrov, Carl M Stahle, Bing Guan, Jian Hui Zhao
Abstract: A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, SiC photo-detectors show excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are many orders of magnitude higher than the D* of other solid state detectors, and for the first time, comparable to that of photomultiplier tubes (PMTs). SiC APDs have also been fabricated to pursue the ultimate sensitivity. By operating the SiC APDs at a linear mode gain over 106, single photoncounting avalanche photodiodes (SPADs) in UV have been demonstrated.
Authors: Alexey V. Afanasyev, Vladimir A. Ilyin, Victor V. Luchinin, Sergey A. Reshanov, Adolf Schöner, K.A. Sergushichev, A.A. Smirnov
Abstract: 4H-SiC UV-photodetectors based on full-epitaxial p +p-n+ multilayer structures werefabricated. The diodes were irradiated with fast neutrons up to the fluence of 1·1014 cm-2 . Current-voltage characteristics, life time of non-equilibrium charge carriers as well as photosensitivityspectra of the diodes before and after irradiation were investigated. The studies showed that PiNUV-photodiodes with base doping below 1·1015 cm-3 retain their performance up to the fluence of5·1012 neutrons per cm2 . The further increase in fast neutron fluence stimulates the creation ofexcessive deep recombination centers. This leads to degradation of I-V-characteristics, reduction ofcarrier life time and, consequently, to degradation of the photosensitivity of devices.
Authors: L. Romashko, A. Myasnikov, V.N. Ovsyuk, V. Vasilyev, T. Zemtsova
Authors: Mehmet Sönmez
Abstract: For Visible Light Communication (VLC) systems, photo receiver is very important for obtaining low noisy modulated signal at receiver side since the pure modulated signal is easy demodulated. Therefore, we give a comparison of performance of three type photo receivers in this paper. In first application, we use a photoresistor to detect the modulated signal. It is referred as CDS (cadmium-sulfide) resistor. Another detector is solar cell unit. The other receiver is selected photodiode detector. It is shown from experimental results that the most appropriate modulated signal is obtained at output of photodiode. The output of solar cell consists of very complex signal compared with output of photoresistor. Additionally, we use PPM (Pulse Position Modulation) technique for transmission of data signal.
Authors: G.M. Smith, M.F. Chriss, F.D. Tamweber, K.S. Boutros, J.S. Flynn, D.M. Keogh
Authors: Tzu Min Ou, Tomoko Borsa, Bart van Zeghbroeck
Abstract: A novel infrared photodiode based on a graphene/n-type silicon heterojunction is explored. The heterojunction photodiode of interest has a large Schottky barrier that results in a low dark current. Graphene serves as the absorbing medium at a wavelength for which silicon is transparent. Under infrared illumination, photo-excited electrons in the graphene gain energy and thus have a greater probability to overcome the barrier and contribute to the photocurrent. We have demonstrated photodiode operation of a graphene/n-Si heterojunction at 1.3 and 1.55 μm wavelength, with 14% internal quantum efficiency and 1.5 pW/Hz1/2 noise-equivalent power, for potential use in silicon photonics.
Authors: Yasuo Hirabayashi, Kensuke Akiyama, Satoru Kaneko
Abstract: The photo-response of 3C-SiC pn homojunction photodiodes was measured at high temperature up to 673K. At 473K, the response is hardly different from that at the room temperature. At 573K and 673K, the peak is red shift and lowering comparing that of 298K. The response increases on the long-wavelength region of the profile because of an increase in optical absorption coefficient on increase in temperature. Responsivities at various temperatures were calculated using one-dimensional diffusion model. The calculated profiles of response are qualitatively in agreement with the experimental results except for that of 473K.
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