Papers by Keyword: Piezoresistive Sensor

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Authors: S. Maflin Shaby, A. Vimala Juliet
Abstract: This paper presents a MEMS Piezoresistive pressure sensor which utilizes a circular shaped polysilicon diaphragm with a nanowire to enhance the sensitivity of the pressure sensor. The polysilicon nanowire is fabricated in such a way that it forms a bridge between the circular polysilicon diaphragm and the substrate. The high Piezoresistive effect of Silicon nanowires is used to enhance the sensitivity. A circular polysilicon nanowire piezoresistor was fabricated by means of reactive ion etching. This paper describes the performance analysis, structural design and fabrication of piezoresistive pressure sensor using simulation technique. The polysilicon nanowire pressure sensor has a circular diaphragm of 500nm radius and has a thickness about 10nm. Finite element method (FEM) is adopted to optimize the sensor output and to improve the sensitivity of the circular shaped diaphragm of a polysilicon nanowire Piezoresistive pressure sensor. The best position to place the Polysilicon nanowires to receive maximum stress was also considered during the design process..The fabricated polysilicon nanowire has high sensitivity of about 133 mV/VKPa.
Authors: Xi Min Ma, Fei Tang, Xiao Hao Wang
Abstract: Over the last decade, a relatively in-depth research on the different structures and types of the full SiC pressure sensors including the piezoresistive, the capacitive and the optical SiC pressure sensors etc. has been conducted with a view to realizing the pressure measurement in high temperature circumstances. The piezoresistive SiC pressure sensor has gradually become the focus of research due to its simple structure and convenience application. In our research, the piezoresistance strip is designed on the deep-etching sensitive circular diaphragm formed via deep etching. Firstly, the 6H-SiC strain coefficient GF value is compared on the radial direction and the transverse direction by analyzing the circular diaphragm deformation theory. It’s concluded that both in the radial direction, four resistance strips are assigned in the center of circular diaphragm and along the edge respectively, with equal number on these two locations. Better consistency and sensitivity are achieved by this solution. Secondly, the design size of the sensitive circular diaphragm and the pressure resistance strips are determined with the expected work temperature and the target measuring range being taken into consideration. The final layout scheme design of four pressure resistance strips is determined through simulation on the consideration of the thermal stress caused by the AlN packaging.
Authors: Yu Bai, Yun Hai Hou, Zhi Wei Chen, Yong Jun Song
Abstract: Robot touch sensation is an important feeling pattern for robots to gain environment information in non-vision sensor domain, in this thesis, the writer uses silicon piezoresistive sensor to form Array haptic system, and form gray level image from collected pressure and temperature information, and judge the slippage condition of objects through image preprocessing, region segmentation, centroid identification, and show the result picturesquely by using image. The experimental result shows that this method can fastly and effectively judge the slippage condition of objects, and it can intuitionally shows the condition of distribution of object temperature.
Authors: Yun Bo Shi, Xiang Li
Abstract: In the process of the piezoresistive sensor design, the placement of varistor has a great influence on the sensitivity of the sensor.In this paper, three theoretical models of piezoresistive sensor are established.The stress simulation analysis of the different varistor path way placed on the cantilever beam is conducted in Ansys software. The sensitivities of the axis and transverse direction are calcuated and compared by Matlab compiler. The results show that the placement of varistor which is parallel to the cantilever beam is the most optimal choice.
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