Papers by Keyword: PL

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Authors: Akira Miyasaka, Jun Norimatsu, Keisuke Fukada, Yutaka Tajima, Yoshiaki Kageshima, Daisuke Muto, Michiya Odawara, Taichi Okano, Kenji Momose, Yuji Osawa, Hiroshi Osawa, Takayuki Sato
Abstract: The production of 150 mm-diameter SiC epitaxial wafers is the key to the spread of SiC power devices. We have developed production technology of the epitaxial growth for 4° off Carbon face (C-face) 4H-SiC epitaxial layers on 150 mm diameter substrates. Several growth parameters and hardware were optimized to obtain high uniformity wafers. We have succeeded in fabricating high quality C-face wafers with smooth surface and high uniformity.
193
Authors: W. Sullivan, John W. Steeds
Abstract: The high-temperature persistent PL defect known as DII is commented on within this study, seen for the first time in low-energy electron irradiated 4H SiC. The local vibrational modes associated with the defect have been identified and the temperature dependence, spatial variation and electron-energy/electron-dose variation of this defect have all been investigated.
319
Authors: Thomas Anderson, Donovan L. Barrett, J. Chen, W.T. Elkington, Ejiro Emorhokpor, A. Gupta, C.J. Johnson, R.H. Hopkins, Charles Martin, Thomas Kerr, E. Semenas, Andrew E. Souzis, C.D. Tanner, Murugesu Yoganathan, Ilya Zwieback
75
Authors: B. Kaufmann, D. Haase, Achim Dörnen, C. Hiller, Klaus Pressel
797
Authors: Ab Aziz Azlinda, Zuraida Khusaimi, Fadzilah Suhaimi Husairi, Nor Iyazi Nasruddin, S. Abdullah, Mohamad Rusop
Abstract: ZnO hexagonal rod structure were prepared by immersion method deposited onto Si (Si/ZnO) and gold-seeded Si substrate (ZnO/Au/Si). The annealing temperatures were varied from 400, 500 and 600 °C. The effect of annealing temperature on the surface morphology and photoluminescence characteristics was investigated. The samples were characterized by Field Emission Scanning Electron Microscope (FESEM) to study their morphology and structural properties while the optical properties were characterized at room temperature using Photoluminescence Spectroscopy. The shape of ZnO showed growth of rods with hexagonal shape. As the annealing temperature increased, the morphology study indicates that diameter size of ZnO decreased while the crystallinity increases. The structures has high surface area, is a potential metal oxide nanostructures to be develop for optoelectronic devices and chemical sensors.
353
Authors: Azlinda Ab Aziz, Zuraida Khusaimi, Saifollah Abdullah, Mohamad Rusop Mahmood
Abstract: ZnO nanorods were prepared by immersion method deposited onto Silicon (Si) and gold-seeded Si (Au/Si) substrate. The annealing temperatures were varied from 400, 500 and 600 °C. The effect of annealing temperature on the surface morphology and photoluminescence characteristics was investigated. The samples were characterized by Field Emission Scanning Electron Microscope (FESEM) to study their morphology and structural properties while the optical properties were characterized at room temperature using Photoluminescence Spectroscope. The shape of ZnO showed growth of nanorods with hexagonal shape. As the annealing temperature increased, the morphology study indicates that particle size of ZnO decreased while the crystallinity increases. The structures has high surface area, is a potential metal oxide nanostructures to be develop for optoelectronic devices and chemical sensors.
110
Authors: M.V.B. Pinheiro, Th. Lingner, F. Caudepon, Siegmund Greulich-Weber, Johann Martin Spaeth
517
Authors: Kun Yong Kang, Shu Kang Deng, Rui Ting Hao, De Cong Li
Abstract: In this paper, we present the characterization of Ge-induced crystallization of amorphous Si (a-Si) films deposited by magnetron sputtering. The film structures of a-Si films were characterized by Raman spectroscopy, Atomic Force microscope (AFM), and field emission scanning electron microscope (FESEM). The result show that 60% of a-si film with a layer of 400 nm Ge buried is crystallized at growth temperature of 800 °C. The surface roughness and average surface grain size obtained by AFM is 2.39 nm and 60 nm for the crystallized film, respectively. The films growth at temperature of 500°C and 650 °C shows a PL spectrum band from 1.6 eV to 1.8 eV, and the PL peak shifts to lower energy as the growth temperature increased. As for the film grown at 800 °C, the PL spectrum is nearly extinguished. The crystallization of a-Si film induced by buried Ge might be a useful technology to develop high quality poly-Si film without annealing.
99
Authors: Takayuki Arai, Kazuo Uchida, Hiroki Tokunaga, Koh Matsumoto
539
Authors: Chong Mu Lee, Anna Park, Young Joon Cho, Hyoun Woo Kim, Jae Gab Lee
Abstract: It is very desirable to grow ZnO epitaxial films on Si substrates since Si wafers with a high quality is available and their prices are quite low. Nevertheless, it is not easy to grow ZnO films epitaxially on Si substrates directly because of formation of an amorphous SiO2 layer at the interface of ZnO and Si. A Zn film and an undoped ZnO film were deposited sequentially on an (100) Si substrate by rf magnetron sputtering. The sample was annealed at 700°C in a nitrogen atmosphere. X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analyses were performed to investigate the cristallinity and surface morphology of the ZnO film. According to the analysis results the crystallinity of a ZnO thin film deposited by rf magnetron sputtering is substantially improved by using a Zn buffer layer. The highest ZnO film quality is obtained with a 110nm thick Zn buffer layer. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.
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